Predicting worst-case charge buildup in power-device field oxides
Existing models for worst-case charge buildup in silicon dioxide are applied to single- and two-level field plate termination structures in n-channel power MOSFETs. It is shown that the field-collapse model, when properly applied to these termination structures, provides excellent agreement between...
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| Veröffentlicht in: | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) 1991-12, Vol.38 (6), p.1383-1390 |
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| container_title | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) |
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| creator | Kosier, S.L. Schrimpf, R.D. Galloway, K.F. Cellier, F.E. |
| description | Existing models for worst-case charge buildup in silicon dioxide are applied to single- and two-level field plate termination structures in n-channel power MOSFETs. It is shown that the field-collapse model, when properly applied to these termination structures, provides excellent agreement between experimental and simulation worst-case breakdown-voltage degradation results. Nonuniform charge buildup in the termination structure field oxide is identified, and two methods of doing device simulation that take the nonuniformity into account are introduced. Finally, simple analytical models are presented that enable the nonuniform charge distribution to be calculated for any field-plate structure.< > |
| doi_str_mv | 10.1109/23.124121 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_124121</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>124121</ieee_id><sourcerecordid>28511386</sourcerecordid><originalsourceid>FETCH-LOGICAL-c364t-7f10368e74a87573fa708cce5f51facf1a65f2c3fa443d6185b5dd7bb776675f3</originalsourceid><addsrcrecordid>eNqN0E1LxDAQgOEgCq6rB6-eiojgoZppmo8eF_ELFvSg55CdTjRS2zXpuvrvrXTRq6chw5P3MIwdAj8H4NVFIc6hKKGALTYBKU0OUpttNuEcTF6VVbXL9lJ6HZ6l5HLCZg-R6oB9aJ-zdRdTn6NLlOGLi8-ULVahqVfLLLTZsltTzGv6CEiZD9TUWfcZakr7bMe7JtHBZk7Z0_XV4-VtPr-_ubuczXMUquxz7YELZUiXzmiphXeaG0SSXoJ36MEp6Qsc9mUpagVGLmRd68VCa6W09GLKjsdul_pgE4ae8AW7tiXsrTSF4qAGdDqiZezeV5R6-xYSUtO4lrpVsoXRWlTS_ANKAGF-imcjxNilFMnbZQxvLn5Z4Pbn5LYQdjz5YE82UZfQNT66FkP6_SBBlbwqBnY0skBEf7mx8Q1EO4by</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28511386</pqid></control><display><type>article</type><title>Predicting worst-case charge buildup in power-device field oxides</title><source>IEEE Electronic Library (IEL)</source><creator>Kosier, S.L. ; Schrimpf, R.D. ; Galloway, K.F. ; Cellier, F.E.</creator><creatorcontrib>Kosier, S.L. ; Schrimpf, R.D. ; Galloway, K.F. ; Cellier, F.E.</creatorcontrib><description>Existing models for worst-case charge buildup in silicon dioxide are applied to single- and two-level field plate termination structures in n-channel power MOSFETs. It is shown that the field-collapse model, when properly applied to these termination structures, provides excellent agreement between experimental and simulation worst-case breakdown-voltage degradation results. Nonuniform charge buildup in the termination structure field oxide is identified, and two methods of doing device simulation that take the nonuniformity into account are introduced. Finally, simple analytical models are presented that enable the nonuniform charge distribution to be calculated for any field-plate structure.< ></description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/23.124121</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>426000 -- Engineering-- Components, Electron Devices & Circuits-- (1990-) ; Analytical models ; Applied sciences ; BREAKDOWN ; Breakdown voltage ; CHALCOGENIDES ; CHARGE COLLECTION ; Computational modeling ; Degradation ; Electronics ; ENGINEERING ; Exact sciences and technology ; FIELD EFFECT TRANSISTORS ; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY ; Ionizing radiation ; MINERALS ; MOS TRANSISTORS ; MOSFET ; MOSFETs ; Other multijunction devices. Power transistors. Thyristors ; OXIDE MINERALS ; OXIDES ; OXYGEN COMPOUNDS ; Process design ; RADIATION EFFECTS ; Radiation hardening ; SEMICONDUCTOR DEVICES ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductor films ; SILICA ; SILICON COMPOUNDS ; SILICON OXIDES ; SIMULATION ; TRANSISTORS 440200 -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems</subject><ispartof>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1991-12, Vol.38 (6), p.1383-1390</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-7f10368e74a87573fa708cce5f51facf1a65f2c3fa443d6185b5dd7bb776675f3</citedby><cites>FETCH-LOGICAL-c364t-7f10368e74a87573fa708cce5f51facf1a65f2c3fa443d6185b5dd7bb776675f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/124121$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,309,310,314,776,780,785,786,792,881,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/124121$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5164092$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/5826016$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kosier, S.L.</creatorcontrib><creatorcontrib>Schrimpf, R.D.</creatorcontrib><creatorcontrib>Galloway, K.F.</creatorcontrib><creatorcontrib>Cellier, F.E.</creatorcontrib><title>Predicting worst-case charge buildup in power-device field oxides</title><title>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)</title><addtitle>TNS</addtitle><description>Existing models for worst-case charge buildup in silicon dioxide are applied to single- and two-level field plate termination structures in n-channel power MOSFETs. It is shown that the field-collapse model, when properly applied to these termination structures, provides excellent agreement between experimental and simulation worst-case breakdown-voltage degradation results. Nonuniform charge buildup in the termination structure field oxide is identified, and two methods of doing device simulation that take the nonuniformity into account are introduced. Finally, simple analytical models are presented that enable the nonuniform charge distribution to be calculated for any field-plate structure.< ></description><subject>426000 -- Engineering-- Components, Electron Devices & Circuits-- (1990-)</subject><subject>Analytical models</subject><subject>Applied sciences</subject><subject>BREAKDOWN</subject><subject>Breakdown voltage</subject><subject>CHALCOGENIDES</subject><subject>CHARGE COLLECTION</subject><subject>Computational modeling</subject><subject>Degradation</subject><subject>Electronics</subject><subject>ENGINEERING</subject><subject>Exact sciences and technology</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</subject><subject>Ionizing radiation</subject><subject>MINERALS</subject><subject>MOS TRANSISTORS</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>OXIDE MINERALS</subject><subject>OXIDES</subject><subject>OXYGEN COMPOUNDS</subject><subject>Process design</subject><subject>RADIATION EFFECTS</subject><subject>Radiation hardening</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductor films</subject><subject>SILICA</subject><subject>SILICON COMPOUNDS</subject><subject>SILICON OXIDES</subject><subject>SIMULATION</subject><subject>TRANSISTORS 440200 -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNqN0E1LxDAQgOEgCq6rB6-eiojgoZppmo8eF_ELFvSg55CdTjRS2zXpuvrvrXTRq6chw5P3MIwdAj8H4NVFIc6hKKGALTYBKU0OUpttNuEcTF6VVbXL9lJ6HZ6l5HLCZg-R6oB9aJ-zdRdTn6NLlOGLi8-ULVahqVfLLLTZsltTzGv6CEiZD9TUWfcZakr7bMe7JtHBZk7Z0_XV4-VtPr-_ubuczXMUquxz7YELZUiXzmiphXeaG0SSXoJ36MEp6Qsc9mUpagVGLmRd68VCa6W09GLKjsdul_pgE4ae8AW7tiXsrTSF4qAGdDqiZezeV5R6-xYSUtO4lrpVsoXRWlTS_ANKAGF-imcjxNilFMnbZQxvLn5Z4Pbn5LYQdjz5YE82UZfQNT66FkP6_SBBlbwqBnY0skBEf7mx8Q1EO4by</recordid><startdate>19911201</startdate><enddate>19911201</enddate><creator>Kosier, S.L.</creator><creator>Schrimpf, R.D.</creator><creator>Galloway, K.F.</creator><creator>Cellier, F.E.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>JG9</scope><scope>OTOTI</scope></search><sort><creationdate>19911201</creationdate><title>Predicting worst-case charge buildup in power-device field oxides</title><author>Kosier, S.L. ; Schrimpf, R.D. ; Galloway, K.F. ; Cellier, F.E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-7f10368e74a87573fa708cce5f51facf1a65f2c3fa443d6185b5dd7bb776675f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>426000 -- Engineering-- Components, Electron Devices & Circuits-- (1990-)</topic><topic>Analytical models</topic><topic>Applied sciences</topic><topic>BREAKDOWN</topic><topic>Breakdown voltage</topic><topic>CHALCOGENIDES</topic><topic>CHARGE COLLECTION</topic><topic>Computational modeling</topic><topic>Degradation</topic><topic>Electronics</topic><topic>ENGINEERING</topic><topic>Exact sciences and technology</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY</topic><topic>Ionizing radiation</topic><topic>MINERALS</topic><topic>MOS TRANSISTORS</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Other multijunction devices. Power transistors. Thyristors</topic><topic>OXIDE MINERALS</topic><topic>OXIDES</topic><topic>OXYGEN COMPOUNDS</topic><topic>Process design</topic><topic>RADIATION EFFECTS</topic><topic>Radiation hardening</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductor films</topic><topic>SILICA</topic><topic>SILICON COMPOUNDS</topic><topic>SILICON OXIDES</topic><topic>SIMULATION</topic><topic>TRANSISTORS 440200 -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kosier, S.L.</creatorcontrib><creatorcontrib>Schrimpf, R.D.</creatorcontrib><creatorcontrib>Galloway, K.F.</creatorcontrib><creatorcontrib>Cellier, F.E.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><collection>OSTI.GOV</collection><jtitle>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kosier, S.L.</au><au>Schrimpf, R.D.</au><au>Galloway, K.F.</au><au>Cellier, F.E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Predicting worst-case charge buildup in power-device field oxides</atitle><jtitle>IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)</jtitle><stitle>TNS</stitle><date>1991-12-01</date><risdate>1991</risdate><volume>38</volume><issue>6</issue><spage>1383</spage><epage>1390</epage><pages>1383-1390</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Existing models for worst-case charge buildup in silicon dioxide are applied to single- and two-level field plate termination structures in n-channel power MOSFETs. It is shown that the field-collapse model, when properly applied to these termination structures, provides excellent agreement between experimental and simulation worst-case breakdown-voltage degradation results. Nonuniform charge buildup in the termination structure field oxide is identified, and two methods of doing device simulation that take the nonuniformity into account are introduced. Finally, simple analytical models are presented that enable the nonuniform charge distribution to be calculated for any field-plate structure.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/23.124121</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 0018-9499 |
| ispartof | IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1991-12, Vol.38 (6), p.1383-1390 |
| issn | 0018-9499 1558-1578 |
| language | eng |
| recordid | cdi_ieee_primary_124121 |
| source | IEEE Electronic Library (IEL) |
| subjects | 426000 -- Engineering-- Components, Electron Devices & Circuits-- (1990-) Analytical models Applied sciences BREAKDOWN Breakdown voltage CHALCOGENIDES CHARGE COLLECTION Computational modeling Degradation Electronics ENGINEERING Exact sciences and technology FIELD EFFECT TRANSISTORS INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY Ionizing radiation MINERALS MOS TRANSISTORS MOSFET MOSFETs Other multijunction devices. Power transistors. Thyristors OXIDE MINERALS OXIDES OXYGEN COMPOUNDS Process design RADIATION EFFECTS Radiation hardening SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor films SILICA SILICON COMPOUNDS SILICON OXIDES SIMULATION TRANSISTORS 440200 -- Radiation Effects on Instrument Components, Instruments, or Electronic Systems |
| title | Predicting worst-case charge buildup in power-device field oxides |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-01T15%3A09%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Predicting%20worst-case%20charge%20buildup%20in%20power-device%20field%20oxides&rft.jtitle=IEEE%20Transactions%20on%20Nuclear%20Science%20(Institute%20of%20Electrical%20and%20Electronics%20Engineers);%20(United%20States)&rft.au=Kosier,%20S.L.&rft.date=1991-12-01&rft.volume=38&rft.issue=6&rft.spage=1383&rft.epage=1390&rft.pages=1383-1390&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/23.124121&rft_dat=%3Cproquest_RIE%3E28511386%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28511386&rft_id=info:pmid/&rft_ieee_id=124121&rfr_iscdi=true |