High-power 1320-nm wafer-bonded VCSELs with tunnel junctions

A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands a...

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Veröffentlicht in:	IEEE photonics technology letters 2003-11, Vol.15 (11), p.1495-1497
Hauptverfasser:	Jayaraman, V., Mehta, M., Jackson, A.W., Wu, S., Okuno, Y., Piprek, J., Bowers, J.E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium arsenides Bonding Devices Electric power generation Electrical junctions Fiber lasers Mirrors Optical fiber communication Optical fiber devices Optical fiber losses Optical surface waves Quantum well lasers Surface emitting lasers Threshold voltage Tunnel junctions Vertical cavity surface emitting lasers Wafer bonding Wavelengths
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