High-power 1320-nm wafer-bonded VCSELs with tunnel junctions

A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands a...

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Veröffentlicht in:IEEE photonics technology letters 2003-11, Vol.15 (11), p.1495-1497
Hauptverfasser: Jayaraman, V., Mehta, M., Jackson, A.W., Wu, S., Okuno, Y., Piprek, J., Bowers, J.E.
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container_end_page 1497
container_issue 11
container_start_page 1495
container_title IEEE photonics technology letters
container_volume 15
creator Jayaraman, V.
Mehta, M.
Jackson, A.W.
Wu, S.
Okuno, Y.
Piprek, J.
Bowers, J.E.
description A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands and reduces the high free-carrier losses and bonded junction voltage drops in previous devices. The intracavity contacts electrically bypass the bonded junctions to reduce threshold voltage. N-type current spreading layers and undoped AlGaAs mirrors minimize optical losses. This has enabled 134/spl deg/C maximum continuous-wave lasing temperature, 2-mW room-temperature continuous-wave single-mode power, and 1-mW single-mode power at 80/spl deg/C, in various devices in the 1310-1340 nm wavelength range.
doi_str_mv 10.1109/LPT.2003.818652
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source IEEE Electronic Library (IEL)
subjects Aluminum gallium arsenides
Bonding
Devices
Electric power generation
Electrical junctions
Fiber lasers
Mirrors
Optical fiber communication
Optical fiber devices
Optical fiber losses
Optical surface waves
Quantum well lasers
Surface emitting lasers
Threshold voltage
Tunnel junctions
Vertical cavity surface emitting lasers
Wafer bonding
Wavelengths
title High-power 1320-nm wafer-bonded VCSELs with tunnel junctions
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