High-power 1320-nm wafer-bonded VCSELs with tunnel junctions
A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands a...
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Veröffentlicht in: | IEEE photonics technology letters 2003-11, Vol.15 (11), p.1495-1497 |
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creator | Jayaraman, V. Mehta, M. Jackson, A.W. Wu, S. Okuno, Y. Piprek, J. Bowers, J.E. |
description | A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands and reduces the high free-carrier losses and bonded junction voltage drops in previous devices. The intracavity contacts electrically bypass the bonded junctions to reduce threshold voltage. N-type current spreading layers and undoped AlGaAs mirrors minimize optical losses. This has enabled 134/spl deg/C maximum continuous-wave lasing temperature, 2-mW room-temperature continuous-wave single-mode power, and 1-mW single-mode power at 80/spl deg/C, in various devices in the 1310-1340 nm wavelength range. |
doi_str_mv | 10.1109/LPT.2003.818652 |
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This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands and reduces the high free-carrier losses and bonded junction voltage drops in previous devices. The intracavity contacts electrically bypass the bonded junctions to reduce threshold voltage. N-type current spreading layers and undoped AlGaAs mirrors minimize optical losses. This has enabled 134/spl deg/C maximum continuous-wave lasing temperature, 2-mW room-temperature continuous-wave single-mode power, and 1-mW single-mode power at 80/spl deg/C, in various devices in the 1310-1340 nm wavelength range.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2003.818652</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum gallium arsenides ; Bonding ; Devices ; Electric power generation ; Electrical junctions ; Fiber lasers ; Mirrors ; Optical fiber communication ; Optical fiber devices ; Optical fiber losses ; Optical surface waves ; Quantum well lasers ; Surface emitting lasers ; Threshold voltage ; Tunnel junctions ; Vertical cavity surface emitting lasers ; Wafer bonding ; Wavelengths</subject><ispartof>IEEE photonics technology letters, 2003-11, Vol.15 (11), p.1495-1497</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2003</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c481t-990e032d3aecda4d0e4f4d5c046e424368e7106ad4ae5dfe4287b108209723223</citedby><cites>FETCH-LOGICAL-c481t-990e032d3aecda4d0e4f4d5c046e424368e7106ad4ae5dfe4287b108209723223</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1237566$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1237566$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jayaraman, V.</creatorcontrib><creatorcontrib>Mehta, M.</creatorcontrib><creatorcontrib>Jackson, A.W.</creatorcontrib><creatorcontrib>Wu, S.</creatorcontrib><creatorcontrib>Okuno, Y.</creatorcontrib><creatorcontrib>Piprek, J.</creatorcontrib><creatorcontrib>Bowers, J.E.</creatorcontrib><title>High-power 1320-nm wafer-bonded VCSELs with tunnel junctions</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>A new long-wavelength vertical-cavity surface-emitting laser structure is described that utilizes AlGaAs-GaAs mirrors bonded to AlInGaAs-InP quantum wells with an intracavity buried tunnel junction. This structure offers complete wavelength flexibility in the 1250-1650 nm fiber communication bands and reduces the high free-carrier losses and bonded junction voltage drops in previous devices. The intracavity contacts electrically bypass the bonded junctions to reduce threshold voltage. N-type current spreading layers and undoped AlGaAs mirrors minimize optical losses. 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subjects | Aluminum gallium arsenides Bonding Devices Electric power generation Electrical junctions Fiber lasers Mirrors Optical fiber communication Optical fiber devices Optical fiber losses Optical surface waves Quantum well lasers Surface emitting lasers Threshold voltage Tunnel junctions Vertical cavity surface emitting lasers Wafer bonding Wavelengths |
title | High-power 1320-nm wafer-bonded VCSELs with tunnel junctions |
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