Gas phase doping at room temperature

Gas phase doping at room temperature

This paper shows new technology of gas phase doping to realize lowest energy around room temperature thermal potential. Shallow junction formation around 1.5-2 nm is anticipated by gas phase doping.

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Bibliographische Detailangaben
Hauptverfasser: Sasaki, Y., Mizuno, B., Akama, S., Higaki, R., Tsutsui, K., Ohomi, S., Iwai, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Argon
Boron
Doping
Electromagnetic measurements
Electromagnets
Gas lasers
Plasma density
Plasma measurements
Plasma sources
Plasma temperature
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Beschreibung
Zusammenfassung:This paper shows new technology of gas phase doping to realize lowest energy around room temperature thermal potential. Shallow junction formation around 1.5-2 nm is anticipated by gas phase doping.
DOI:10.1109/IWJT.2002.1225196