Numerical simulation of silicon flowmeters based on piezoresistance effect

Numerical simulation of silicon flowmeters based on piezoresistance effect

The results of numerical simulation of the output characteristics of silicon integrated flowmeters, with the help of the program package ANSYS, are presented.

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Bibliographische Detailangaben
Hauptverfasser: Nazin, A.V., Gridchin, V.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bridge circuits
Etching
Gas detectors
Integrated circuit technology
Mechanical sensors
Numerical models
Numerical simulation
Piezoresistance
Silicon
Software packages
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Beschreibung
Zusammenfassung:The results of numerical simulation of the output characteristics of silicon integrated flowmeters, with the help of the program package ANSYS, are presented.
DOI:10.1109/SREDM.2003.1224192