Locally ion-implanted JFET in an InGaAs/InP p-i-n photodiode layer structure for a monolithically planar integrated receiver OEIC

A novel planar concept for the monolithic integration of a p-i-n photodiode (PD) and a junction field-effect transistor (JFET) is described. In an otherwise optimized InGaAs/InP PD layer sequence, grown by metalorganic vapor-phase epitaxy (MOVPE), a local Si- and Be-ion implantation has been perform...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE photonics technology letters 1992-03, Vol.4 (3), p.253-255
Hauptverfasser:	Bauer, J.G., Albrecht, H., Hoffmann, L., Romer, D., Walter, J.W.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cutoff frequency Dark current Epitaxial growth Epitaxial layers FETs Indium gallium arsenide Indium phosphide Monolithic integrated circuits PIN photodiodes Transconductance
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!