The effects of temperature and KOH concentration on silicon etching rate and membrane surface roughness

The effects of temperature and KOH concentration on silicon etching rate and membrane surface roughness

The characterization of the KOH aqueous solution was done in order to study the effects of temperature and KOH concentration on the silicon etching rate for membrane formation. The study was done for temperatures ranging from 65/spl deg/C to 80/spl deg/C and KOH concentration ranging from 15% to 55%...

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Bibliographische Detailangaben
Hauptverfasser: Noor, M.M., Bais, B., Majlis, B.Y.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anisotropic magnetoresistance
Biomembranes
Etching
Heating
Resists
Rough surfaces
Silicon
Surface roughness
Temperature dependence
Temperature distribution
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Beschreibung
Zusammenfassung:The characterization of the KOH aqueous solution was done in order to study the effects of temperature and KOH concentration on the silicon etching rate for membrane formation. The study was done for temperatures ranging from 65/spl deg/C to 80/spl deg/C and KOH concentration ranging from 15% to 55%. Experiments showed that the temperature of 80/spl deg/C and KOH concentration of 35% will yield the optimum etching rate with the minimum surface roughness. A silicon membrane of thickness 48 /spl mu/m was produced with KOH concentration of 35% at the temperature of 75/spl deg/C for 7 hours and 45 minutes and the etching profile analyzed.
DOI:10.1109/SMELEC.2002.1217878