Reliability investigation of 0.07-μm InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In0.75Ga0.25As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-μm T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two tempera...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE electron device letters 2003-06, Vol.24 (6), p.378-380
Hauptverfasser:	Chou, Y.C., Leung, D., Lai, R., Grundbacher, R., Barsky, M., Kan, Q., Tsai, R., Wojtowicz, M., Eng, D., Tran, L., Block, T., Liu, P.H., Nishimoto, M., Oki, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuit testing HEMTs Integrated circuit reliability Life testing Microwave amplifiers Microwave integrated circuits MMICs Monolithic integrated circuits Performance evaluation Temperature
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!