Investigation of a SiGe HBT during ESD stress in a 0.18-μm SiGe BiCMOS process

This paper investigates the electrostatic discharge (ESD) characteristics of the silicon-germanium heterojunction bipolar transistor (SiGe HBT) in a 0.18-μm SiGe BiCMOS process. According to this letter, the open base configuration in the SiGe HBT has lower trigger voltage and higher ESD robustness...

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Veröffentlicht in:	IEEE electron device letters 2003-03, Vol.24 (3), p.168-170, Article 168
Hauptverfasser:	Shiao-Shien Chen, Tung-Yang Chen, Tien-Hao Tang, Shao-Chang Huang, Hsu, T.-L., Hua-Chou Tseng, Jen-Kon Chen, Chiu-Hsiang Chou
Format:	Artikel
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits CMOS CMOS process Devices Electric potential Electrostatic discharge Electrostatic discharges Germanium silicon alloys Heterojunction bipolar transistors MOS devices Robustness Silicon germanides Silicon germanium Stress Voltage
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