The design and operation of TeraHertz sources based on silicon germanium alloys

During the past few years, vigorous studies have begun on semiconductor devices that generate and detect frequencies from 0.3 - 10 TeraHertz (1000 30 /spl mu/m). Previous THz sources were based on electrical methods using transistor oscillators (to 0.5 THz), diode frequency multipliers (to 2.5 THz),...

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Bibliographische Detailangaben

Hauptverfasser:	Kolodzey, J., Adam, T.N., Troeger, R.T., Lv, P.-C., Ray, S.K., Looney, G., Rosen, A., Kagan, M.S., Yassievich, I.N.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electromagnetic wave absorption Frequency Germanium alloys Germanium silicon alloys III-V semiconductor materials Oscillators Quantum cascade lasers Semiconductor devices Silicon alloys Silicon germanium
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