Multi-wafer growth and processing of 0.6-eV InGaAs monolithic interconnected modules
Recent progress in the optical and electrical performance of monolithic interconnected modules (MIMs) has produced an interest in manufacturing large quantities of cells for evaluation. Information resulting from this evaluation is necessary to produce and optimize a TPV system, where a large number...
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creator | Murray, C. Newman, F. Murray, S. Hills, J. Aiken, D. Siergiej, R. Wernsman, B. Taylor, A. |
description | Recent progress in the optical and electrical performance of monolithic interconnected modules (MIMs) has produced an interest in manufacturing large quantities of cells for evaluation. Information resulting from this evaluation is necessary to produce and optimize a TPV system, where a large number of devices with a nominal performance must be available for insertion into series/parallel electrical networks. In this work over 130 wafers comprising three different device designs were grown, with representative wafers from each design processed in a pilot-line manufacturing environment. This paper describes the material growth, device design and processing, and electrical performance of these cells. |
doi_str_mv | 10.1109/PVSC.2002.1190722 |
format | Conference Proceeding |
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ispartof | Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002, 2002, p.888-891 |
issn | 1060-8371 |
language | eng ; jpn |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Applied sciences Doping Energy Exact sciences and technology Indium gallium arsenide Manufacturing processes Natural energy Plasma applications Plasma measurements Plasma temperature Process design Production Solar energy Substrates Temperature control |
title | Multi-wafer growth and processing of 0.6-eV InGaAs monolithic interconnected modules |
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