Multi-wafer growth and processing of 0.6-eV InGaAs monolithic interconnected modules

Recent progress in the optical and electrical performance of monolithic interconnected modules (MIMs) has produced an interest in manufacturing large quantities of cells for evaluation. Information resulting from this evaluation is necessary to produce and optimize a TPV system, where a large number...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Murray, C., Newman, F., Murray, S., Hills, J., Aiken, D., Siergiej, R., Wernsman, B., Taylor, A.
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 891
container_issue
container_start_page 888
container_title
container_volume
creator Murray, C.
Newman, F.
Murray, S.
Hills, J.
Aiken, D.
Siergiej, R.
Wernsman, B.
Taylor, A.
description Recent progress in the optical and electrical performance of monolithic interconnected modules (MIMs) has produced an interest in manufacturing large quantities of cells for evaluation. Information resulting from this evaluation is necessary to produce and optimize a TPV system, where a large number of devices with a nominal performance must be available for insertion into series/parallel electrical networks. In this work over 130 wafers comprising three different device designs were grown, with representative wafers from each design processed in a pilot-line manufacturing environment. This paper describes the material growth, device design and processing, and electrical performance of these cells.
doi_str_mv 10.1109/PVSC.2002.1190722
format Conference Proceeding
fullrecord <record><control><sourceid>pascalfrancis_6IE</sourceid><recordid>TN_cdi_ieee_primary_1190722</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1190722</ieee_id><sourcerecordid>15877157</sourcerecordid><originalsourceid>FETCH-LOGICAL-i1167-4ff6c21c29a1b6de680d0d6e4370effc4fb2048e6c43ca87ca99a18c94ff6b1d3</originalsourceid><addsrcrecordid>eNpFkM1LAzEQxQMqWGr_APGSi8etmSTNx7EUPwoVBWuvJU0mbWSbLZstxf_elQo-BobH-80cHiG3wMYAzD68rz5mY84Y761lmvMLMrLasH6ElhrEJRkAU6wyQsM1GZXyxXrJCWgrB2T5eqy7VJ1cxJZu2-bU7ajLgR7axmMpKW9pEykbqwpXdJ6f3bTQfZObOnW75GnKHba-yRl9h6FPwrHGckOuoqsLjv72kHw-PS5nL9Xi7Xk-my6qBKB0JWNUnoPn1sFGBVSGBRYUSqEZxuhl3HAmDSovhXdGe2d70nj7e7iBIIbk_vz34Ip3dWxd9qmsD23au_Z7DROjNUx0z92duYSI__G5L_EDTHtecw</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Multi-wafer growth and processing of 0.6-eV InGaAs monolithic interconnected modules</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Murray, C. ; Newman, F. ; Murray, S. ; Hills, J. ; Aiken, D. ; Siergiej, R. ; Wernsman, B. ; Taylor, A.</creator><creatorcontrib>Murray, C. ; Newman, F. ; Murray, S. ; Hills, J. ; Aiken, D. ; Siergiej, R. ; Wernsman, B. ; Taylor, A.</creatorcontrib><description>Recent progress in the optical and electrical performance of monolithic interconnected modules (MIMs) has produced an interest in manufacturing large quantities of cells for evaluation. Information resulting from this evaluation is necessary to produce and optimize a TPV system, where a large number of devices with a nominal performance must be available for insertion into series/parallel electrical networks. In this work over 130 wafers comprising three different device designs were grown, with representative wafers from each design processed in a pilot-line manufacturing environment. This paper describes the material growth, device design and processing, and electrical performance of these cells.</description><identifier>ISSN: 1060-8371</identifier><identifier>ISBN: 9780780374713</identifier><identifier>ISBN: 0780374711</identifier><identifier>DOI: 10.1109/PVSC.2002.1190722</identifier><language>eng ; jpn</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Doping ; Energy ; Exact sciences and technology ; Indium gallium arsenide ; Manufacturing processes ; Natural energy ; Plasma applications ; Plasma measurements ; Plasma temperature ; Process design ; Production ; Solar energy ; Substrates ; Temperature control</subject><ispartof>Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002, 2002, p.888-891</ispartof><rights>2004 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1190722$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,4040,4041,27916,54911</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1190722$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=15877157$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Murray, C.</creatorcontrib><creatorcontrib>Newman, F.</creatorcontrib><creatorcontrib>Murray, S.</creatorcontrib><creatorcontrib>Hills, J.</creatorcontrib><creatorcontrib>Aiken, D.</creatorcontrib><creatorcontrib>Siergiej, R.</creatorcontrib><creatorcontrib>Wernsman, B.</creatorcontrib><creatorcontrib>Taylor, A.</creatorcontrib><title>Multi-wafer growth and processing of 0.6-eV InGaAs monolithic interconnected modules</title><title>Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002</title><addtitle>PVSC</addtitle><description>Recent progress in the optical and electrical performance of monolithic interconnected modules (MIMs) has produced an interest in manufacturing large quantities of cells for evaluation. Information resulting from this evaluation is necessary to produce and optimize a TPV system, where a large number of devices with a nominal performance must be available for insertion into series/parallel electrical networks. In this work over 130 wafers comprising three different device designs were grown, with representative wafers from each design processed in a pilot-line manufacturing environment. This paper describes the material growth, device design and processing, and electrical performance of these cells.</description><subject>Applied sciences</subject><subject>Doping</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Indium gallium arsenide</subject><subject>Manufacturing processes</subject><subject>Natural energy</subject><subject>Plasma applications</subject><subject>Plasma measurements</subject><subject>Plasma temperature</subject><subject>Process design</subject><subject>Production</subject><subject>Solar energy</subject><subject>Substrates</subject><subject>Temperature control</subject><issn>1060-8371</issn><isbn>9780780374713</isbn><isbn>0780374711</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFkM1LAzEQxQMqWGr_APGSi8etmSTNx7EUPwoVBWuvJU0mbWSbLZstxf_elQo-BobH-80cHiG3wMYAzD68rz5mY84Y761lmvMLMrLasH6ElhrEJRkAU6wyQsM1GZXyxXrJCWgrB2T5eqy7VJ1cxJZu2-bU7ajLgR7axmMpKW9pEykbqwpXdJ6f3bTQfZObOnW75GnKHba-yRl9h6FPwrHGckOuoqsLjv72kHw-PS5nL9Xi7Xk-my6qBKB0JWNUnoPn1sFGBVSGBRYUSqEZxuhl3HAmDSovhXdGe2d70nj7e7iBIIbk_vz34Ip3dWxd9qmsD23au_Z7DROjNUx0z92duYSI__G5L_EDTHtecw</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Murray, C.</creator><creator>Newman, F.</creator><creator>Murray, S.</creator><creator>Hills, J.</creator><creator>Aiken, D.</creator><creator>Siergiej, R.</creator><creator>Wernsman, B.</creator><creator>Taylor, A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>IQODW</scope></search><sort><creationdate>2002</creationdate><title>Multi-wafer growth and processing of 0.6-eV InGaAs monolithic interconnected modules</title><author>Murray, C. ; Newman, F. ; Murray, S. ; Hills, J. ; Aiken, D. ; Siergiej, R. ; Wernsman, B. ; Taylor, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i1167-4ff6c21c29a1b6de680d0d6e4370effc4fb2048e6c43ca87ca99a18c94ff6b1d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng ; jpn</language><creationdate>2002</creationdate><topic>Applied sciences</topic><topic>Doping</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Indium gallium arsenide</topic><topic>Manufacturing processes</topic><topic>Natural energy</topic><topic>Plasma applications</topic><topic>Plasma measurements</topic><topic>Plasma temperature</topic><topic>Process design</topic><topic>Production</topic><topic>Solar energy</topic><topic>Substrates</topic><topic>Temperature control</topic><toplevel>online_resources</toplevel><creatorcontrib>Murray, C.</creatorcontrib><creatorcontrib>Newman, F.</creatorcontrib><creatorcontrib>Murray, S.</creatorcontrib><creatorcontrib>Hills, J.</creatorcontrib><creatorcontrib>Aiken, D.</creatorcontrib><creatorcontrib>Siergiej, R.</creatorcontrib><creatorcontrib>Wernsman, B.</creatorcontrib><creatorcontrib>Taylor, A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Murray, C.</au><au>Newman, F.</au><au>Murray, S.</au><au>Hills, J.</au><au>Aiken, D.</au><au>Siergiej, R.</au><au>Wernsman, B.</au><au>Taylor, A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Multi-wafer growth and processing of 0.6-eV InGaAs monolithic interconnected modules</atitle><btitle>Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002</btitle><stitle>PVSC</stitle><date>2002</date><risdate>2002</risdate><spage>888</spage><epage>891</epage><pages>888-891</pages><issn>1060-8371</issn><isbn>9780780374713</isbn><isbn>0780374711</isbn><abstract>Recent progress in the optical and electrical performance of monolithic interconnected modules (MIMs) has produced an interest in manufacturing large quantities of cells for evaluation. Information resulting from this evaluation is necessary to produce and optimize a TPV system, where a large number of devices with a nominal performance must be available for insertion into series/parallel electrical networks. In this work over 130 wafers comprising three different device designs were grown, with representative wafers from each design processed in a pilot-line manufacturing environment. This paper describes the material growth, device design and processing, and electrical performance of these cells.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/PVSC.2002.1190722</doi><tpages>4</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1060-8371
ispartof Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002, 2002, p.888-891
issn 1060-8371
language eng ; jpn
recordid cdi_ieee_primary_1190722
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Applied sciences
Doping
Energy
Exact sciences and technology
Indium gallium arsenide
Manufacturing processes
Natural energy
Plasma applications
Plasma measurements
Plasma temperature
Process design
Production
Solar energy
Substrates
Temperature control
title Multi-wafer growth and processing of 0.6-eV InGaAs monolithic interconnected modules
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T06%3A10%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Multi-wafer%20growth%20and%20processing%20of%200.6-eV%20InGaAs%20monolithic%20interconnected%20modules&rft.btitle=Conference%20Record%20of%20the%20Twenty-Ninth%20IEEE%20Photovoltaic%20Specialists%20Conference,%202002&rft.au=Murray,%20C.&rft.date=2002&rft.spage=888&rft.epage=891&rft.pages=888-891&rft.issn=1060-8371&rft.isbn=9780780374713&rft.isbn_list=0780374711&rft_id=info:doi/10.1109/PVSC.2002.1190722&rft_dat=%3Cpascalfrancis_6IE%3E15877157%3C/pascalfrancis_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1190722&rfr_iscdi=true