RF linearity study of SiGe HBTs for low power RFIC design. II. Analysis

For pt. 1 see ibid., p. 70-73 (2002). An analysis is introduced for the third-order-intermodulation (IM3) cancellation induced by the emitter-terminations, which has been observed in part I of this paper. The analysis shows that the IM3 can be perfectly cancelled if the emitter impedance at the seco...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Xiaojuen, Y., Lie, D.Y.C., Larson, L.E., Blonski, J., Gross, J., Kumar, M., Mecke, J., Senior, A., Chen, Y., Poh, A., Harame, D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Germanium silicon alloys Heterojunction bipolar transistors Impedance Linearity Low-noise amplifiers Microelectronics Performance analysis Radio frequency Radiofrequency integrated circuits Silicon germanium
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