RF linearity study of SiGe HBTs for low power RFIC design. II. Analysis
For pt. 1 see ibid., p. 70-73 (2002). An analysis is introduced for the third-order-intermodulation (IM3) cancellation induced by the emitter-terminations, which has been observed in part I of this paper. The analysis shows that the IM3 can be perfectly cancelled if the emitter impedance at the seco...
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| creator | Xiaojuen, Y. Lie, D.Y.C. Larson, L.E. Blonski, J. Gross, J. Kumar, M. Mecke, J. Senior, A. Chen, Y. Poh, A. Harame, D. |
| description | For pt. 1 see ibid., p. 70-73 (2002). An analysis is introduced for the third-order-intermodulation (IM3) cancellation induced by the emitter-terminations, which has been observed in part I of this paper. The analysis shows that the IM3 can be perfectly cancelled if the emitter impedance at the second harmonic and the sub-harmonic frequencies are terminated properly and if the effect from q/sub bc/ is negligible. When the effect of q/sub bc/ cannot be neglected, optimized source and load harmonic terminations are proposed to minimize the q/sub bc/ effects. Increasing the source impedance at the fundamental frequency is found effective in minimizing the residual IM3 that is not cancelled from the proposed terminations. |
| doi_str_mv | 10.1109/ICMMT.2002.1187638 |
| format | Conference Proceeding |
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Increasing the source impedance at the fundamental frequency is found effective in minimizing the residual IM3 that is not cancelled from the proposed terminations.</description><identifier>ISBN: 9780780374867</identifier><identifier>ISBN: 078037486X</identifier><identifier>DOI: 10.1109/ICMMT.2002.1187638</identifier><language>eng</language><publisher>IEEE</publisher><subject>Germanium silicon alloys ; Heterojunction bipolar transistors ; Impedance ; Linearity ; Low-noise amplifiers ; Microelectronics ; Performance analysis ; Radio frequency ; Radiofrequency integrated circuits ; Silicon germanium</subject><ispartof>2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. 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II. Analysis</title><title>2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002</title><addtitle>ICMMT</addtitle><description>For pt. 1 see ibid., p. 70-73 (2002). An analysis is introduced for the third-order-intermodulation (IM3) cancellation induced by the emitter-terminations, which has been observed in part I of this paper. The analysis shows that the IM3 can be perfectly cancelled if the emitter impedance at the second harmonic and the sub-harmonic frequencies are terminated properly and if the effect from q/sub bc/ is negligible. When the effect of q/sub bc/ cannot be neglected, optimized source and load harmonic terminations are proposed to minimize the q/sub bc/ effects. Increasing the source impedance at the fundamental frequency is found effective in minimizing the residual IM3 that is not cancelled from the proposed terminations.</description><subject>Germanium silicon alloys</subject><subject>Heterojunction bipolar transistors</subject><subject>Impedance</subject><subject>Linearity</subject><subject>Low-noise amplifiers</subject><subject>Microelectronics</subject><subject>Performance analysis</subject><subject>Radio frequency</subject><subject>Radiofrequency integrated circuits</subject><subject>Silicon germanium</subject><isbn>9780780374867</isbn><isbn>078037486X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj1FrgzAUhQNjsNH5B7aX_AHdjYm5yWMn0wotg873ovVmZDgtxlH89xPWw4GP8_LBYexZQCIE2NcqPxzqJAVI121QS3PHIosG1kpURuMDi0L4hjXSZpnAR1YeC977gZrJzwsP82-38NHxT18S373Vgbtx4v145ZfxShM_FlXOOwr-a0h4VSV8OzT9Enx4Yveu6QNFN25YXbzX-S7ef5RVvt3H3sIcW52eoc2sSDUIQLCm1YCkzgKV7FqjU5IGjciwych11CpHCjJllHMCUcoNe_nXeiI6XSb_00zL6fZW_gEuk0eg</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Xiaojuen, Y.</creator><creator>Lie, D.Y.C.</creator><creator>Larson, L.E.</creator><creator>Blonski, J.</creator><creator>Gross, J.</creator><creator>Kumar, M.</creator><creator>Mecke, J.</creator><creator>Senior, A.</creator><creator>Chen, Y.</creator><creator>Poh, A.</creator><creator>Harame, D.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2002</creationdate><title>RF linearity study of SiGe HBTs for low power RFIC design. II. Analysis</title><author>Xiaojuen, Y. ; Lie, D.Y.C. ; Larson, L.E. ; Blonski, J. ; Gross, J. ; Kumar, M. ; Mecke, J. ; Senior, A. ; Chen, Y. ; Poh, A. ; Harame, D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-962c0b591260107098b607e4c1743db862e3878157a5efdeb4fe405484ff17733</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Germanium silicon alloys</topic><topic>Heterojunction bipolar transistors</topic><topic>Impedance</topic><topic>Linearity</topic><topic>Low-noise amplifiers</topic><topic>Microelectronics</topic><topic>Performance analysis</topic><topic>Radio frequency</topic><topic>Radiofrequency integrated circuits</topic><topic>Silicon germanium</topic><toplevel>online_resources</toplevel><creatorcontrib>Xiaojuen, Y.</creatorcontrib><creatorcontrib>Lie, D.Y.C.</creatorcontrib><creatorcontrib>Larson, L.E.</creatorcontrib><creatorcontrib>Blonski, J.</creatorcontrib><creatorcontrib>Gross, J.</creatorcontrib><creatorcontrib>Kumar, M.</creatorcontrib><creatorcontrib>Mecke, J.</creatorcontrib><creatorcontrib>Senior, A.</creatorcontrib><creatorcontrib>Chen, Y.</creatorcontrib><creatorcontrib>Poh, A.</creatorcontrib><creatorcontrib>Harame, D.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xiaojuen, Y.</au><au>Lie, D.Y.C.</au><au>Larson, L.E.</au><au>Blonski, J.</au><au>Gross, J.</au><au>Kumar, M.</au><au>Mecke, J.</au><au>Senior, A.</au><au>Chen, Y.</au><au>Poh, A.</au><au>Harame, D.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>RF linearity study of SiGe HBTs for low power RFIC design. II. Analysis</atitle><btitle>2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002</btitle><stitle>ICMMT</stitle><date>2002</date><risdate>2002</risdate><spage>74</spage><epage>77</epage><pages>74-77</pages><isbn>9780780374867</isbn><isbn>078037486X</isbn><abstract>For pt. 1 see ibid., p. 70-73 (2002). An analysis is introduced for the third-order-intermodulation (IM3) cancellation induced by the emitter-terminations, which has been observed in part I of this paper. The analysis shows that the IM3 can be perfectly cancelled if the emitter impedance at the second harmonic and the sub-harmonic frequencies are terminated properly and if the effect from q/sub bc/ is negligible. When the effect of q/sub bc/ cannot be neglected, optimized source and load harmonic terminations are proposed to minimize the q/sub bc/ effects. Increasing the source impedance at the fundamental frequency is found effective in minimizing the residual IM3 that is not cancelled from the proposed terminations.</abstract><pub>IEEE</pub><doi>10.1109/ICMMT.2002.1187638</doi><tpages>4</tpages></addata></record> |
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| subjects | Germanium silicon alloys Heterojunction bipolar transistors Impedance Linearity Low-noise amplifiers Microelectronics Performance analysis Radio frequency Radiofrequency integrated circuits Silicon germanium |
| title | RF linearity study of SiGe HBTs for low power RFIC design. II. Analysis |
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