Frequency-independent equivalent-circuit model for on-chip spiral inductors
A wide-band physical and scalable 2-/spl Pi/ equivalent circuit model for on-chip spiral inductors is developed. Based on physical derivation and circuit theory, closed-form formulas are generated to calculate the RLC circuit elements directly from the inductor layout. The 2-/spl Pi/ model accuratel...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 2003-03, Vol.38 (3), p.419-426 |
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| container_end_page | 426 |
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| container_issue | 3 |
| container_start_page | 419 |
| container_title | IEEE journal of solid-state circuits |
| container_volume | 38 |
| creator | Yu Cao Groves, R.A. Xuejue Huang Zamdmer, N.D. Plouchart, J.-O. Wachnik, R.A. Tsu-Jae King Chenming Hu |
| description | A wide-band physical and scalable 2-/spl Pi/ equivalent circuit model for on-chip spiral inductors is developed. Based on physical derivation and circuit theory, closed-form formulas are generated to calculate the RLC circuit elements directly from the inductor layout. The 2-/spl Pi/ model accurately captures R(f) and L(f) characteristics beyond the self-resonant frequency. Using frequency-independent RLC elements, this new model is fully compatible with both ac and transient analysis. Verification with measurement data from a SiGe process demonstrates accurate performance prediction and excellent scalability for a wide range of inductor configurations. |
| doi_str_mv | 10.1109/JSSC.2002.808285 |
| format | Article |
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Based on physical derivation and circuit theory, closed-form formulas are generated to calculate the RLC circuit elements directly from the inductor layout. The 2-/spl Pi/ model accurately captures R(f) and L(f) characteristics beyond the self-resonant frequency. Using frequency-independent RLC elements, this new model is fully compatible with both ac and transient analysis. Verification with measurement data from a SiGe process demonstrates accurate performance prediction and excellent scalability for a wide range of inductor configurations.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2002.808285</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Circuit theory ; Circuits ; Derivation ; Equivalence ; Equivalent circuits ; Frequency ; Germanium silicon alloys ; Inductors ; Mathematical analysis ; Mathematical models ; RLC circuits ; Silicon germanides ; Silicon germanium ; Spirals ; Transient analysis ; Wideband</subject><ispartof>IEEE journal of solid-state circuits, 2003-03, Vol.38 (3), p.419-426</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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Based on physical derivation and circuit theory, closed-form formulas are generated to calculate the RLC circuit elements directly from the inductor layout. The 2-/spl Pi/ model accurately captures R(f) and L(f) characteristics beyond the self-resonant frequency. Using frequency-independent RLC elements, this new model is fully compatible with both ac and transient analysis. Verification with measurement data from a SiGe process demonstrates accurate performance prediction and excellent scalability for a wide range of inductor configurations.</description><subject>Circuit theory</subject><subject>Circuits</subject><subject>Derivation</subject><subject>Equivalence</subject><subject>Equivalent circuits</subject><subject>Frequency</subject><subject>Germanium silicon alloys</subject><subject>Inductors</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>RLC circuits</subject><subject>Silicon germanides</subject><subject>Silicon germanium</subject><subject>Spirals</subject><subject>Transient analysis</subject><subject>Wideband</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc9LwzAUx4MoOKd3wUvxIF4y89I0TY4ynL8GHqbgLaRphhldU5NW2H9vygTBg5e8vLzP90seX4TOgcwAiLx5Wq3mM0oInQkiqCgO0ASKQmAo8_dDNCEEBJZpfoxOYtykljEBE_S8CPZzsK3ZYdfWtrPpaPssvbkv3aQrNi6YwfXZ1te2ydY-ZL7F5sN1Wexc0E2WdIPpfYin6Gitm2jPfuoUvS3uXucPePly_zi_XWKTS9njuiKs5LzUIMFCJWqmodBVRSpBJdOWydJqy2VpDKtZAbxMC9VQgeCgteT5FF3tfbvg099jr7YuGts0urV-iIqKnBDGRvD6XzBZA5WEc5LQyz_oxg-hTWsoSSkvWA6jH9lDJvgYg12rLritDjsFRI0pqDEFNaag9ikkycVe4qy1vziIXDCRfwMpjYLY</recordid><startdate>20030301</startdate><enddate>20030301</enddate><creator>Yu Cao</creator><creator>Groves, R.A.</creator><creator>Xuejue Huang</creator><creator>Zamdmer, N.D.</creator><creator>Plouchart, J.-O.</creator><creator>Wachnik, R.A.</creator><creator>Tsu-Jae King</creator><creator>Chenming Hu</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Based on physical derivation and circuit theory, closed-form formulas are generated to calculate the RLC circuit elements directly from the inductor layout. The 2-/spl Pi/ model accurately captures R(f) and L(f) characteristics beyond the self-resonant frequency. Using frequency-independent RLC elements, this new model is fully compatible with both ac and transient analysis. Verification with measurement data from a SiGe process demonstrates accurate performance prediction and excellent scalability for a wide range of inductor configurations.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JSSC.2002.808285</doi><tpages>8</tpages></addata></record> |
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| identifier | ISSN: 0018-9200 |
| ispartof | IEEE journal of solid-state circuits, 2003-03, Vol.38 (3), p.419-426 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_ieee_primary_1183848 |
| source | IEEE Electronic Library (IEL) |
| subjects | Circuit theory Circuits Derivation Equivalence Equivalent circuits Frequency Germanium silicon alloys Inductors Mathematical analysis Mathematical models RLC circuits Silicon germanides Silicon germanium Spirals Transient analysis Wideband |
| title | Frequency-independent equivalent-circuit model for on-chip spiral inductors |
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