Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs
The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum confinement in the channel of these thin-body devices causes a decrease in gate leakage by as much as an order of magnitude. The effects of b...
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| Veröffentlicht in: | IEEE transactions on electron devices 2002-12, Vol.49 (12), p.2288-2295 |
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| container_end_page | 2295 |
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| container_issue | 12 |
| container_start_page | 2288 |
| container_title | IEEE transactions on electron devices |
| container_volume | 49 |
| creator | Leland Chang Yang, K.J. Yee-Chia Yeo Polishchuk, I. Tsu-Jae King Chenming Hu |
| description | The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum confinement in the channel of these thin-body devices causes a decrease in gate leakage by as much as an order of magnitude. The effects of body thickness scaling and channel crystallographic orientation are studied. The impact of threshold voltage control solutions, including doped channel and asymmetric double-gate structures is also investigated. Future gate dielectric thickness scaling and the use of high-/spl kappa/ gate dielectrics are discussed. |
| doi_str_mv | 10.1109/TED.2002.807446 |
| format | Article |
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Reduced vertical electric field and quantum confinement in the channel of these thin-body devices causes a decrease in gate leakage by as much as an order of magnitude. The effects of body thickness scaling and channel crystallographic orientation are studied. The impact of threshold voltage control solutions, including doped channel and asymmetric double-gate structures is also investigated. 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Future gate dielectric thickness scaling and the use of high-/spl kappa/ gate dielectrics are discussed.</description><subject>Current</subject><subject>Dielectric films</subject><subject>MOSFETs</subject><subject>Silicon materials/devices</subject><subject>Tunneling</subject><subject>Voltage control</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqFkb1PwzAQxS0EEqUwM7BEDGxp_R17RG35kIo6UGbLcS4lJU2KnQz973EJEhIL0-nu_d5JTw-ha4InhGA9XS_mE4oxnSiccS5P0IgIkaVacnmKRhgTlWqm2Dm6CGEbV8k5HaHVvPLgurTrmwbqqtkkG9tBUoP9sBtIXO89NF1SNUnR9nkN6bdsmyLp687b7j0qeVsckpfV68NiHS7RWWnrAFc_c4ze4nn2lC5Xj8-z-2XqOOFdalXJ8wITSgGXeekEaCU52MwylzupGRHggClttXSOCVpaK3OaObAuy3TJxuhu-Lv37WcPoTO7Kjioa9tA2wdDFWUSK_E_mBEqmCQRvP0DbtveNzGEUYoLmkmpIjQdIOfbEDyUZu-rnfUHQ7A51mBiDeZYgxlqiI6bwVEBwC9NYgot2RfyT4Nd</recordid><startdate>200212</startdate><enddate>200212</enddate><creator>Leland Chang</creator><creator>Yang, K.J.</creator><creator>Yee-Chia Yeo</creator><creator>Polishchuk, I.</creator><creator>Tsu-Jae King</creator><creator>Chenming Hu</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| source | IEEE Electronic Library (IEL) |
| subjects | Current Dielectric films MOSFETs Silicon materials/devices Tunneling Voltage control |
| title | Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs |
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