Transistor delay analysis and effective channel velocity extraction in AlGaN/GaN HFETs

Performed a thorough transistor delay analysis on 0.2 /spl mu/m AlGaN/GaN HFETs implemented on sapphire substrates to identify the various contributions to the total transistor delay 1/2/spl pi/f/sub T/ = /spl tau//sub T/ as a function of gate-drain separation L/sub GD/. We found that the main delay...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bolognesi, C.R., Kwan, A.C., DiSanto, D.W.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Applied sciences Delay effects Delay lines Electrical resistance measurement Electronics Exact sciences and technology Gallium nitride HEMTs MODFETs Performance analysis Scattering parameters Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!