Fully depleted surrounding gate transistor (SGT) for 70 nm DRAM and beyond
A high performance surrounding gate transistor (SGT) enabling sufficient static and dynamic retention time of future DRAM cells is presented. For the first time, we demonstrate a fully depleted SGT, that shows no reduction of the retention time due to the transient bipolar effect. This effect potent...
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| creator | Goebel, B. Lutzen, J. Manger, D. Moll, P. Mummler, K. Popp, M. Scheler, U. Schlosser, T. Seidl, H. Sesterhenn, M. Slesazeck, S. Tegen, S. |
| description | A high performance surrounding gate transistor (SGT) enabling sufficient static and dynamic retention time of future DRAM cells is presented. For the first time, we demonstrate a fully depleted SGT, that shows no reduction of the retention time due to the transient bipolar effect. This effect potentially prevents DRAM application of fully depleted SGTs and is therefore investigated in detail. Based on experimental results, the impact of the proposed SGT on the scalability and performance of future DRAMs is discussed. |
| doi_str_mv | 10.1109/IEDM.2002.1175831 |
| format | Conference Proceeding |
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Testing</subject><subject>Doping</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Leakage current</subject><subject>MOSFETs</subject><subject>Oxidation</subject><subject>Random access memory</subject><subject>Scalability</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| identifier | ISBN: 9780780374621 |
| ispartof | Digest. International Electron Devices Meeting, 2002, p.275-278 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Applied sciences Capacitors Design. Technologies. Operation analysis. Testing Doping Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Leakage current MOSFETs Oxidation Random access memory Scalability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Space charge Testing |
| title | Fully depleted surrounding gate transistor (SGT) for 70 nm DRAM and beyond |
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