Channel recessed 4H-SiC MESFETs with F/sub t/ of 14.5GHz and F/sub max/ of 40GHz

Channel recessed 4H-SiC MESFETs have demonstrated excellent small signal characteristics and the effect of Si/sub 3/N/sub 4/ passivation on these devices has been studied in this work. A saturated current of 250-270 mA/mm and a maximum transconductance of 40-45 mS/mm were measured for these devices....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ho-Young Cha, Thomas, C.I., Koley, G., Hyungtak Kim, Eastman, L.F., Spencer, M.G.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Current measurement Dispersion Etching Gate leakage MESFETs Passivation Power measurement Silicon carbide Transconductance Voltage
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