Zinc Oxide-Bismuth Oxide Low Q Decoupling Capacitor

A description and analysis are presented of the fabrication and electrical properties of a non-ferroelectric material with a high apparent dielectric constant over a wide frequency range into the megacycle region. This material is zinc oxide with additions of bismuth oxide. Specific attention is foc...

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Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on parts, materials, and packaging materials, and packaging, 1966-03, Vol.PMP-2 (1/2), p.9-24
Hauptverfasser:	Delaney, R., Kaiser, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bismuth Capacitors Conductivity Dielectric constant Dielectric materials Fabrication Frequency High-K gate dielectrics Impedance Zinc oxide
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