A Manufacturing Process for Analog and Digital Gallium Arsenide Integrated Circuits
A process for manufacturing small-to-medium scale GaAs integrated circuits is described. Integrated FET's, diodes, resistors, thin-film capacitors, and inductors are used for monolithic integration of digital and analog circuits. Direct implantation of Si into >10/sup 5/ omega/spl dot/cm res...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 1982-07, Vol.30 (7), p.935-942 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 942 |
|---|---|
| container_issue | 7 |
| container_start_page | 935 |
| container_title | IEEE transactions on microwave theory and techniques |
| container_volume | 30 |
| creator | Van Tuyl, R.L. Kumar, V. D'Avanzo, D.C. Taylor, T.W. Peterson, V.E. Hornbuckle, D.P. Fisher, R.A. Estreich, D.B. |
| description | A process for manufacturing small-to-medium scale GaAs integrated circuits is described. Integrated FET's, diodes, resistors, thin-film capacitors, and inductors are used for monolithic integration of digital and analog circuits. Direct implantation of Si into >10/sup 5/ omega/spl dot/cm resistivity substrates produces n-layers with +-10-percent sheet resistance variation. A planar fabrication process featuring retained anneal cap (SiO/sub 2/), proton isolation, recessed Mo-Au gates, silicon nitride passivation, and a dual-level metal system with polyimide intermetal dielectric is described. Automated on-wafer testing at frequencies up to 4 GHz is introduced, and a calculator-controlled frequency domain test system described. Circuit yields for six different circuit designs are reported, and process defect densities are inferred. |
| doi_str_mv | 10.1109/TMTT.1982.1131180 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_ieee_primary_1131180</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1131180</ieee_id><sourcerecordid>10_1109_TMTT_1982_1131180</sourcerecordid><originalsourceid>FETCH-LOGICAL-c263t-69034b75c4bcc6f5be2f6c653e5a37572ec7f2919b697d8f981860efd759f1e3</originalsourceid><addsrcrecordid>eNpFkMtKw0AYhQdRMFYfQNzMC6TOn2RuyxC1FloUzD5MJv-EkTSRmWTh29vSgqvD4VwWHyGPwNYATD_X-7peg1bZ0eYAil2RBDiXqRaSXZOEMVCpLhS7JXcxfh9twZlKyFdJ92ZcnLHzEvzY088wWYyRuinQcjTD1FMzdvTF9342A92YYfDLgZYh4ug7pNtxxj6YGTta-WAXP8d7cuPMEPHhoitSv73W1Xu6-9hsq3KX2kzkcyo0y4tWclu01grHW8ycsILnyE0uuczQSpdp0K3QslNOK1CCoesk1w4wXxE439owxRjQNT_BH0z4bYA1JyjNCUpzgtJcoBw3T-eNR8T__iX9A8drXko</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>A Manufacturing Process for Analog and Digital Gallium Arsenide Integrated Circuits</title><source>IEEE Electronic Library (IEL)</source><creator>Van Tuyl, R.L. ; Kumar, V. ; D'Avanzo, D.C. ; Taylor, T.W. ; Peterson, V.E. ; Hornbuckle, D.P. ; Fisher, R.A. ; Estreich, D.B.</creator><creatorcontrib>Van Tuyl, R.L. ; Kumar, V. ; D'Avanzo, D.C. ; Taylor, T.W. ; Peterson, V.E. ; Hornbuckle, D.P. ; Fisher, R.A. ; Estreich, D.B.</creatorcontrib><description>A process for manufacturing small-to-medium scale GaAs integrated circuits is described. Integrated FET's, diodes, resistors, thin-film capacitors, and inductors are used for monolithic integration of digital and analog circuits. Direct implantation of Si into >10/sup 5/ omega/spl dot/cm resistivity substrates produces n-layers with +-10-percent sheet resistance variation. A planar fabrication process featuring retained anneal cap (SiO/sub 2/), proton isolation, recessed Mo-Au gates, silicon nitride passivation, and a dual-level metal system with polyimide intermetal dielectric is described. Automated on-wafer testing at frequencies up to 4 GHz is introduced, and a calculator-controlled frequency domain test system described. Circuit yields for six different circuit designs are reported, and process defect densities are inferred.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.1982.1131180</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analog integrated circuits ; Automatic testing ; Circuit testing ; Dielectric substrates ; Digital integrated circuits ; Gallium arsenide ; Integrated circuit manufacture ; Manufacturing processes ; System testing ; Thin film inductors</subject><ispartof>IEEE transactions on microwave theory and techniques, 1982-07, Vol.30 (7), p.935-942</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c263t-69034b75c4bcc6f5be2f6c653e5a37572ec7f2919b697d8f981860efd759f1e3</citedby><cites>FETCH-LOGICAL-c263t-69034b75c4bcc6f5be2f6c653e5a37572ec7f2919b697d8f981860efd759f1e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1131180$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1131180$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Van Tuyl, R.L.</creatorcontrib><creatorcontrib>Kumar, V.</creatorcontrib><creatorcontrib>D'Avanzo, D.C.</creatorcontrib><creatorcontrib>Taylor, T.W.</creatorcontrib><creatorcontrib>Peterson, V.E.</creatorcontrib><creatorcontrib>Hornbuckle, D.P.</creatorcontrib><creatorcontrib>Fisher, R.A.</creatorcontrib><creatorcontrib>Estreich, D.B.</creatorcontrib><title>A Manufacturing Process for Analog and Digital Gallium Arsenide Integrated Circuits</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>A process for manufacturing small-to-medium scale GaAs integrated circuits is described. Integrated FET's, diodes, resistors, thin-film capacitors, and inductors are used for monolithic integration of digital and analog circuits. Direct implantation of Si into >10/sup 5/ omega/spl dot/cm resistivity substrates produces n-layers with +-10-percent sheet resistance variation. A planar fabrication process featuring retained anneal cap (SiO/sub 2/), proton isolation, recessed Mo-Au gates, silicon nitride passivation, and a dual-level metal system with polyimide intermetal dielectric is described. Automated on-wafer testing at frequencies up to 4 GHz is introduced, and a calculator-controlled frequency domain test system described. Circuit yields for six different circuit designs are reported, and process defect densities are inferred.</description><subject>Analog integrated circuits</subject><subject>Automatic testing</subject><subject>Circuit testing</subject><subject>Dielectric substrates</subject><subject>Digital integrated circuits</subject><subject>Gallium arsenide</subject><subject>Integrated circuit manufacture</subject><subject>Manufacturing processes</subject><subject>System testing</subject><subject>Thin film inductors</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1982</creationdate><recordtype>article</recordtype><recordid>eNpFkMtKw0AYhQdRMFYfQNzMC6TOn2RuyxC1FloUzD5MJv-EkTSRmWTh29vSgqvD4VwWHyGPwNYATD_X-7peg1bZ0eYAil2RBDiXqRaSXZOEMVCpLhS7JXcxfh9twZlKyFdJ92ZcnLHzEvzY088wWYyRuinQcjTD1FMzdvTF9342A92YYfDLgZYh4ug7pNtxxj6YGTta-WAXP8d7cuPMEPHhoitSv73W1Xu6-9hsq3KX2kzkcyo0y4tWclu01grHW8ycsILnyE0uuczQSpdp0K3QslNOK1CCoesk1w4wXxE439owxRjQNT_BH0z4bYA1JyjNCUpzgtJcoBw3T-eNR8T__iX9A8drXko</recordid><startdate>198207</startdate><enddate>198207</enddate><creator>Van Tuyl, R.L.</creator><creator>Kumar, V.</creator><creator>D'Avanzo, D.C.</creator><creator>Taylor, T.W.</creator><creator>Peterson, V.E.</creator><creator>Hornbuckle, D.P.</creator><creator>Fisher, R.A.</creator><creator>Estreich, D.B.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>198207</creationdate><title>A Manufacturing Process for Analog and Digital Gallium Arsenide Integrated Circuits</title><author>Van Tuyl, R.L. ; Kumar, V. ; D'Avanzo, D.C. ; Taylor, T.W. ; Peterson, V.E. ; Hornbuckle, D.P. ; Fisher, R.A. ; Estreich, D.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-69034b75c4bcc6f5be2f6c653e5a37572ec7f2919b697d8f981860efd759f1e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1982</creationdate><topic>Analog integrated circuits</topic><topic>Automatic testing</topic><topic>Circuit testing</topic><topic>Dielectric substrates</topic><topic>Digital integrated circuits</topic><topic>Gallium arsenide</topic><topic>Integrated circuit manufacture</topic><topic>Manufacturing processes</topic><topic>System testing</topic><topic>Thin film inductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Van Tuyl, R.L.</creatorcontrib><creatorcontrib>Kumar, V.</creatorcontrib><creatorcontrib>D'Avanzo, D.C.</creatorcontrib><creatorcontrib>Taylor, T.W.</creatorcontrib><creatorcontrib>Peterson, V.E.</creatorcontrib><creatorcontrib>Hornbuckle, D.P.</creatorcontrib><creatorcontrib>Fisher, R.A.</creatorcontrib><creatorcontrib>Estreich, D.B.</creatorcontrib><collection>CrossRef</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Van Tuyl, R.L.</au><au>Kumar, V.</au><au>D'Avanzo, D.C.</au><au>Taylor, T.W.</au><au>Peterson, V.E.</au><au>Hornbuckle, D.P.</au><au>Fisher, R.A.</au><au>Estreich, D.B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Manufacturing Process for Analog and Digital Gallium Arsenide Integrated Circuits</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>1982-07</date><risdate>1982</risdate><volume>30</volume><issue>7</issue><spage>935</spage><epage>942</epage><pages>935-942</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>A process for manufacturing small-to-medium scale GaAs integrated circuits is described. Integrated FET's, diodes, resistors, thin-film capacitors, and inductors are used for monolithic integration of digital and analog circuits. Direct implantation of Si into >10/sup 5/ omega/spl dot/cm resistivity substrates produces n-layers with +-10-percent sheet resistance variation. A planar fabrication process featuring retained anneal cap (SiO/sub 2/), proton isolation, recessed Mo-Au gates, silicon nitride passivation, and a dual-level metal system with polyimide intermetal dielectric is described. Automated on-wafer testing at frequencies up to 4 GHz is introduced, and a calculator-controlled frequency domain test system described. Circuit yields for six different circuit designs are reported, and process defect densities are inferred.</abstract><pub>IEEE</pub><doi>10.1109/TMTT.1982.1131180</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9480 |
| ispartof | IEEE transactions on microwave theory and techniques, 1982-07, Vol.30 (7), p.935-942 |
| issn | 0018-9480 1557-9670 |
| language | eng |
| recordid | cdi_ieee_primary_1131180 |
| source | IEEE Electronic Library (IEL) |
| subjects | Analog integrated circuits Automatic testing Circuit testing Dielectric substrates Digital integrated circuits Gallium arsenide Integrated circuit manufacture Manufacturing processes System testing Thin film inductors |
| title | A Manufacturing Process for Analog and Digital Gallium Arsenide Integrated Circuits |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T00%3A10%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Manufacturing%20Process%20for%20Analog%20and%20Digital%20Gallium%20Arsenide%20Integrated%20Circuits&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Van%20Tuyl,%20R.L.&rft.date=1982-07&rft.volume=30&rft.issue=7&rft.spage=935&rft.epage=942&rft.pages=935-942&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.1982.1131180&rft_dat=%3Ccrossref_RIE%3E10_1109_TMTT_1982_1131180%3C/crossref_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1131180&rfr_iscdi=true |