1.3-/spl mu/m quantum-well InGaAsP, AlGaInAs, and InGaAsN laser material gain: a theoretical study

Due to the keen interest in improving the high-speed and high-temperature performance of 1.3-/spl mu/m wavelength lasers, we compare, for the first time, the material gain of three different competing active layer materials, namely InGaAsP-InGaAsP, AlGaInAs-AlGaInAs, and InGaAsN-GaAs. We present a t...

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Veröffentlicht in:	IEEE journal of quantum electronics 2002-12, Vol.38 (12), p.1553-1564
Hauptverfasser:	Yong, J.C.L., Rorison, J.M., White, I.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Laser theory Optical materials Performance gain Quantum mechanics Quantum well lasers Semiconductor lasers Semiconductor materials Surface emitting lasers Temperature dependence Vertical cavity surface emitting lasers
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