Fully Integrated Matching Network With Bondwire for Power Amplifier Minimization [Application Notes]

Fully Integrated Matching Network With Bondwire for Power Amplifier Minimization [Application Notes]

This article explores the advancement of wireless communication focusing on the development of high-performance front-end circuits in mature 5G and beyond mobile technologies. It investigates the design of power amplifiers (PAs) and the need for miniaturization because of the rising demand for high...

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Veröffentlicht in:IEEE microwave magazine 2025-02, Vol.26 (2), p.84-92
Hauptverfasser: Ho, Lok Ki, Ng, Alan W. L., Chan, Wing Shing, Mung, Steve W. Y.
Format: Magazinearticle
Sprache:eng
Schlagworte:
Distance measurement
Gallium nitride
HEMTs
Microwave communication
Microwave transistors
Minimization
Power amplifiers
Prototypes
Transistors
Tutorials
Wireless communication
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container_title IEEE microwave magazine
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creator Ho, Lok Ki
Ng, Alan W. L.
Chan, Wing Shing
Mung, Steve W. Y.
description This article explores the advancement of wireless communication focusing on the development of high-performance front-end circuits in mature 5G and beyond mobile technologies. It investigates the design of power amplifiers (PAs) and the need for miniaturization because of the rising demand for high data rate applications. The article demonstrates the utilization of bondwires for the fully integrated matching network in PAs to achieve size reduction of the die and package. The use of gallium nitride-based transistors and high-electron-mobility transistors for fully integrated PAs is examined.
doi_str_mv 10.1109/MMM.2024.3486600
format Magazinearticle
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subjects Distance measurement
Gallium nitride
HEMTs
Microwave communication
Microwave transistors
Minimization
Power amplifiers
Prototypes
Transistors
Tutorials
Wireless communication
title Fully Integrated Matching Network With Bondwire for Power Amplifier Minimization [Application Notes]
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