A Novel Condition Monitoring Method for Full Modes of Package Degradation in High Power Modules Based on Hysteresis Curves of Forward Voltage Drop
Package degradation for high power IGBT Modules would seriously affect the operation safety of power electronic converters. Due to the variety of degradation modes, state-ofthe-art monitoring methods still struggle to comprehensively evaluate the health status of the module. Therefore, this paper ai...
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Veröffentlicht in: | IEEE transactions on power electronics 2024-11, p.1-13 |
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creator | Wang, Yuchen Zhang, Hong Wang, Jianpeng Zhang, Jin Wang, Tianjian Liu, Yi Wang, Laili Pei, Yunqing She, Xiaoliang Liu, Jinjun |
description | Package degradation for high power IGBT Modules would seriously affect the operation safety of power electronic converters. Due to the variety of degradation modes, state-ofthe-art monitoring methods still struggle to comprehensively evaluate the health status of the module. Therefore, this paper aims to propose a novel condition monitoring method for full modes of package degradation in high power IGBT modules. The hysteresis curve of forward voltage drop was found for the first time to contain the critical information to separate the different degradation mechanisms. The corresponding monitoring circuit and diagnostic process were also proposed and further carried on an inverter prototype with 150A peak current. The experiment results show that the different degradation modes, i.e., bond wires lift off, solder fatigue and thermal grease aging for IGBT modules can be effectively identified by the hysteresis curve. This method is expected to reduce the difficulty of converter maintenance in field application, as it is possible to accurately distinguish whether the degradation is internal or external to the IGBT module. |
doi_str_mv | 10.1109/TPEL.2024.3506813 |
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Due to the variety of degradation modes, state-ofthe-art monitoring methods still struggle to comprehensively evaluate the health status of the module. Therefore, this paper aims to propose a novel condition monitoring method for full modes of package degradation in high power IGBT modules. The hysteresis curve of forward voltage drop was found for the first time to contain the critical information to separate the different degradation mechanisms. The corresponding monitoring circuit and diagnostic process were also proposed and further carried on an inverter prototype with 150A peak current. The experiment results show that the different degradation modes, i.e., bond wires lift off, solder fatigue and thermal grease aging for IGBT modules can be effectively identified by the hysteresis curve. This method is expected to reduce the difficulty of converter maintenance in field application, as it is possible to accurately distinguish whether the degradation is internal or external to the IGBT module.</description><identifier>ISSN: 0885-8993</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2024.3506813</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aging ; Condition monitoring ; Degradation ; Fatigue ; Heating systems ; Hysteresis ; Insulated gate bipolar transistors ; Inverters ; Junctions ; Monitoring ; Semiconductor device reliability ; Temperature ; Wires</subject><ispartof>IEEE transactions on power electronics, 2024-11, p.1-13</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10767363$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54737</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10767363$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wang, Yuchen</creatorcontrib><creatorcontrib>Zhang, Hong</creatorcontrib><creatorcontrib>Wang, Jianpeng</creatorcontrib><creatorcontrib>Zhang, Jin</creatorcontrib><creatorcontrib>Wang, Tianjian</creatorcontrib><creatorcontrib>Liu, Yi</creatorcontrib><creatorcontrib>Wang, Laili</creatorcontrib><creatorcontrib>Pei, Yunqing</creatorcontrib><creatorcontrib>She, Xiaoliang</creatorcontrib><creatorcontrib>Liu, Jinjun</creatorcontrib><title>A Novel Condition Monitoring Method for Full Modes of Package Degradation in High Power Modules Based on Hysteresis Curves of Forward Voltage Drop</title><title>IEEE transactions on power electronics</title><addtitle>TPEL</addtitle><description>Package degradation for high power IGBT Modules would seriously affect the operation safety of power electronic converters. Due to the variety of degradation modes, state-ofthe-art monitoring methods still struggle to comprehensively evaluate the health status of the module. Therefore, this paper aims to propose a novel condition monitoring method for full modes of package degradation in high power IGBT modules. The hysteresis curve of forward voltage drop was found for the first time to contain the critical information to separate the different degradation mechanisms. The corresponding monitoring circuit and diagnostic process were also proposed and further carried on an inverter prototype with 150A peak current. The experiment results show that the different degradation modes, i.e., bond wires lift off, solder fatigue and thermal grease aging for IGBT modules can be effectively identified by the hysteresis curve. This method is expected to reduce the difficulty of converter maintenance in field application, as it is possible to accurately distinguish whether the degradation is internal or external to the IGBT module.</description><subject>Aging</subject><subject>Condition monitoring</subject><subject>Degradation</subject><subject>Fatigue</subject><subject>Heating systems</subject><subject>Hysteresis</subject><subject>Insulated gate bipolar transistors</subject><subject>Inverters</subject><subject>Junctions</subject><subject>Monitoring</subject><subject>Semiconductor device reliability</subject><subject>Temperature</subject><subject>Wires</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkEtOwzAURS0EEqWwACQG3kCKHedjD0voB6mFDiqmkWO_pIYQV3baqttgxSRtB4yeru5HTwehR0pGlBLxvF5NFqOQhNGIxSThlF2hARURDQgl6TUaEM7jgAvBbtGd91-E0CgmdIB-x_jd7qHGmW20aY1t8NI2prXONBVeQruxGpfW4emurjtLg8e2xCupvmUF-BUqJ7U89UyD56ba4JU9gOuju7oLv0gPGnf2_OhbcOCNx9nO7c87U-sO0mn8aev2tOfs9h7dlLL28HC5Q7SeTtbZPFh8zN6y8SJQCWMBgChUpDlPY5UoJnstWKR4WJAkElDKQvKQER3LIikViwgVBaNlQkCFVFM2RPQ8q5z13kGZb535ke6YU5L3TPOead4zzS9Mu87TuWMA4F8-TVLWPfUHv7t1Mw</recordid><startdate>20241125</startdate><enddate>20241125</enddate><creator>Wang, Yuchen</creator><creator>Zhang, Hong</creator><creator>Wang, Jianpeng</creator><creator>Zhang, Jin</creator><creator>Wang, Tianjian</creator><creator>Liu, Yi</creator><creator>Wang, Laili</creator><creator>Pei, Yunqing</creator><creator>She, Xiaoliang</creator><creator>Liu, Jinjun</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20241125</creationdate><title>A Novel Condition Monitoring Method for Full Modes of Package Degradation in High Power Modules Based on Hysteresis Curves of Forward Voltage Drop</title><author>Wang, Yuchen ; Zhang, Hong ; Wang, Jianpeng ; Zhang, Jin ; Wang, Tianjian ; Liu, Yi ; Wang, Laili ; Pei, Yunqing ; She, Xiaoliang ; Liu, Jinjun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c633-ee9bc4d8875c6c3aee9b934c82b0649efaba8230d5ab6fc34019b31f60ec21d13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Aging</topic><topic>Condition monitoring</topic><topic>Degradation</topic><topic>Fatigue</topic><topic>Heating systems</topic><topic>Hysteresis</topic><topic>Insulated gate bipolar transistors</topic><topic>Inverters</topic><topic>Junctions</topic><topic>Monitoring</topic><topic>Semiconductor device reliability</topic><topic>Temperature</topic><topic>Wires</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Yuchen</creatorcontrib><creatorcontrib>Zhang, Hong</creatorcontrib><creatorcontrib>Wang, Jianpeng</creatorcontrib><creatorcontrib>Zhang, Jin</creatorcontrib><creatorcontrib>Wang, Tianjian</creatorcontrib><creatorcontrib>Liu, Yi</creatorcontrib><creatorcontrib>Wang, Laili</creatorcontrib><creatorcontrib>Pei, Yunqing</creatorcontrib><creatorcontrib>She, Xiaoliang</creatorcontrib><creatorcontrib>Liu, Jinjun</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE transactions on power electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Yuchen</au><au>Zhang, Hong</au><au>Wang, Jianpeng</au><au>Zhang, Jin</au><au>Wang, Tianjian</au><au>Liu, Yi</au><au>Wang, Laili</au><au>Pei, Yunqing</au><au>She, Xiaoliang</au><au>Liu, Jinjun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Novel Condition Monitoring Method for Full Modes of Package Degradation in High Power Modules Based on Hysteresis Curves of Forward Voltage Drop</atitle><jtitle>IEEE transactions on power electronics</jtitle><stitle>TPEL</stitle><date>2024-11-25</date><risdate>2024</risdate><spage>1</spage><epage>13</epage><pages>1-13</pages><issn>0885-8993</issn><eissn>1941-0107</eissn><coden>ITPEE8</coden><abstract>Package degradation for high power IGBT Modules would seriously affect the operation safety of power electronic converters. Due to the variety of degradation modes, state-ofthe-art monitoring methods still struggle to comprehensively evaluate the health status of the module. Therefore, this paper aims to propose a novel condition monitoring method for full modes of package degradation in high power IGBT modules. The hysteresis curve of forward voltage drop was found for the first time to contain the critical information to separate the different degradation mechanisms. The corresponding monitoring circuit and diagnostic process were also proposed and further carried on an inverter prototype with 150A peak current. The experiment results show that the different degradation modes, i.e., bond wires lift off, solder fatigue and thermal grease aging for IGBT modules can be effectively identified by the hysteresis curve. This method is expected to reduce the difficulty of converter maintenance in field application, as it is possible to accurately distinguish whether the degradation is internal or external to the IGBT module.</abstract><pub>IEEE</pub><doi>10.1109/TPEL.2024.3506813</doi><tpages>13</tpages></addata></record> |
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subjects | Aging Condition monitoring Degradation Fatigue Heating systems Hysteresis Insulated gate bipolar transistors Inverters Junctions Monitoring Semiconductor device reliability Temperature Wires |
title | A Novel Condition Monitoring Method for Full Modes of Package Degradation in High Power Modules Based on Hysteresis Curves of Forward Voltage Drop |
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