Performance of Yb/p-CIGS Schottky Photodiodes at Low Temperatures
The Yb/p-Cu(InxGa _{{x}-{1}} )Se2 (CIGS) Schottky photodiodes were fabricated on Mo-coated glass substrates. Structural and morphological characterizations of the CIGS on the Mo layer were investigated. The current-voltage (I-V) characteristics of the produced devices were performed for dark and sol...
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| creator | Yavru, Celal Alp Kaleli, Murat Serkan Uncu, Ismail Akyurekli, Salih Aldemir, Durmus Ali |
| description | The Yb/p-Cu(InxGa _{{x}-{1}} )Se2 (CIGS) Schottky photodiodes were fabricated on Mo-coated glass substrates. Structural and morphological characterizations of the CIGS on the Mo layer were investigated. The current-voltage (I-V) characteristics of the produced devices were performed for dark and solar light (100 mW/cm2) in the temperature range of 40-300 K. The activation energy ( {E}_{a} ) was found to be 0.645 eV from the temperature dependence of the open circuit voltage. It was determined that this value is very close to half of the bandgap of CIGS thin films ( {E}_{g} , 1.35 eV for this study). The responsivity and detectivity values were calculated for a wide temperature range. The responsivity value decreased and the detectivity value increased with the decrease in temperature. The highest responsivity value was found as 14.3 mA/W at 280 K. The highest detectivity value was calculated as {4.97} \times {10}^{{9}} Jones at 60 K. The suitability of the produced devices for photodetector applications at low temperatures has been investigated. |
| doi_str_mv | 10.1109/TED.2024.3475992 |
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Structural and morphological characterizations of the CIGS on the Mo layer were investigated. The current-voltage (I-V) characteristics of the produced devices were performed for dark and solar light (100 mW/cm2) in the temperature range of 40-300 K. The activation energy (<inline-formula> <tex-math notation="LaTeX">{E}_{a} </tex-math></inline-formula>) was found to be 0.645 eV from the temperature dependence of the open circuit voltage. It was determined that this value is very close to half of the bandgap of CIGS thin films (<inline-formula> <tex-math notation="LaTeX">{E}_{g} </tex-math></inline-formula>, 1.35 eV for this study). The responsivity and detectivity values were calculated for a wide temperature range. The responsivity value decreased and the detectivity value increased with the decrease in temperature. The highest responsivity value was found as 14.3 mA/W at 280 K. The highest detectivity value was calculated as <inline-formula> <tex-math notation="LaTeX">{4.97} \times {10}^{{9}} </tex-math></inline-formula> Jones at 60 K. The suitability of the produced devices for photodetector applications at low temperatures has been investigated.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2024.3475992</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Activation energy ; Copper ; Copper indium gallium selenides ; Cu(InₓGaₓ−₁)Se₂ (CIGS) films ; Current voltage characteristics ; electrical properties ; energy dispersive spectroscopy (EDS) mapping ; Glass substrates ; Low temperature ; Molybdenum ; Numerical analysis ; Open circuit voltage ; photodetector ; Photodiodes ; Photonic band gap ; Scanning electron microscopy ; Schottky diodes ; Semiconductor device measurement ; Temperature ; Temperature dependence ; Temperature distribution ; Temperature measurement ; Thin films ; X-ray scattering</subject><ispartof>IEEE transactions on electron devices, 2024-12, Vol.71 (12), p.7569-7574</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c175t-8a6d34c79a5a039bc1220248bfb438a1ca960684fedeb6d9fa036f3ff4441083</cites><orcidid>0000-0002-3290-2020 ; 0000-0003-4819-840X ; 0000-0001-6005-667X ; 0000-0003-4932-0382 ; 0000-0003-4345-761X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10721276$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10721276$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yavru, Celal Alp</creatorcontrib><creatorcontrib>Kaleli, Murat</creatorcontrib><creatorcontrib>Serkan Uncu, Ismail</creatorcontrib><creatorcontrib>Akyurekli, Salih</creatorcontrib><creatorcontrib>Aldemir, Durmus Ali</creatorcontrib><title>Performance of Yb/p-CIGS Schottky Photodiodes at Low Temperatures</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[The Yb/p-Cu(InxGa<inline-formula> <tex-math notation="LaTeX">_{{x}-{1}} </tex-math></inline-formula>)Se2 (CIGS) Schottky photodiodes were fabricated on Mo-coated glass substrates. Structural and morphological characterizations of the CIGS on the Mo layer were investigated. The current-voltage (I-V) characteristics of the produced devices were performed for dark and solar light (100 mW/cm2) in the temperature range of 40-300 K. The activation energy (<inline-formula> <tex-math notation="LaTeX">{E}_{a} </tex-math></inline-formula>) was found to be 0.645 eV from the temperature dependence of the open circuit voltage. It was determined that this value is very close to half of the bandgap of CIGS thin films (<inline-formula> <tex-math notation="LaTeX">{E}_{g} </tex-math></inline-formula>, 1.35 eV for this study). The responsivity and detectivity values were calculated for a wide temperature range. The responsivity value decreased and the detectivity value increased with the decrease in temperature. The highest responsivity value was found as 14.3 mA/W at 280 K. The highest detectivity value was calculated as <inline-formula> <tex-math notation="LaTeX">{4.97} \times {10}^{{9}} </tex-math></inline-formula> Jones at 60 K. The suitability of the produced devices for photodetector applications at low temperatures has been investigated.]]></description><subject>Activation energy</subject><subject>Copper</subject><subject>Copper indium gallium selenides</subject><subject>Cu(InₓGaₓ−₁)Se₂ (CIGS) films</subject><subject>Current voltage characteristics</subject><subject>electrical properties</subject><subject>energy dispersive spectroscopy (EDS) mapping</subject><subject>Glass substrates</subject><subject>Low temperature</subject><subject>Molybdenum</subject><subject>Numerical analysis</subject><subject>Open circuit voltage</subject><subject>photodetector</subject><subject>Photodiodes</subject><subject>Photonic band gap</subject><subject>Scanning electron microscopy</subject><subject>Schottky diodes</subject><subject>Semiconductor device measurement</subject><subject>Temperature</subject><subject>Temperature dependence</subject><subject>Temperature distribution</subject><subject>Temperature measurement</subject><subject>Thin films</subject><subject>X-ray scattering</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkM1LAzEUxIMoWKt3Dx4CnrfN12aTY6m1FgoWuhdPIZt9wVbbrMkW6X9vSnvwNDz4zcxjEHqkZEQp0eN69jJihIkRF1WpNbtCA1qWVaGlkNdoQAhVheaK36K7lLb5lEKwAZqsIPoQd3bvAAePP5pxV0wX8zVeu8_Q919HvMoa2k1oIWHb42X4xTXsOoi2P0RI9-jG2-8EDxcdovp1Vk_fiuX7fDGdLAtHq7IvlJUtF67StrSE68ZRdnpXNb4RXFnqrJZEKuGhhUa22mdKeu69EIISxYfo-RzbxfBzgNSbbTjEfW40nAoiBaWqzBQ5Uy6GlCJ408XNzsajocScdjJ5J3MqNpedsuXpbNkAwD-8YpRVkv8BgWpikA</recordid><startdate>20241201</startdate><enddate>20241201</enddate><creator>Yavru, Celal Alp</creator><creator>Kaleli, Murat</creator><creator>Serkan Uncu, Ismail</creator><creator>Akyurekli, Salih</creator><creator>Aldemir, Durmus Ali</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-3290-2020</orcidid><orcidid>https://orcid.org/0000-0003-4819-840X</orcidid><orcidid>https://orcid.org/0000-0001-6005-667X</orcidid><orcidid>https://orcid.org/0000-0003-4932-0382</orcidid><orcidid>https://orcid.org/0000-0003-4345-761X</orcidid></search><sort><creationdate>20241201</creationdate><title>Performance of Yb/p-CIGS Schottky Photodiodes at Low Temperatures</title><author>Yavru, Celal Alp ; Kaleli, Murat ; Serkan Uncu, Ismail ; Akyurekli, Salih ; Aldemir, Durmus Ali</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c175t-8a6d34c79a5a039bc1220248bfb438a1ca960684fedeb6d9fa036f3ff4441083</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Activation energy</topic><topic>Copper</topic><topic>Copper indium gallium selenides</topic><topic>Cu(InₓGaₓ−₁)Se₂ (CIGS) films</topic><topic>Current voltage characteristics</topic><topic>electrical properties</topic><topic>energy dispersive spectroscopy (EDS) mapping</topic><topic>Glass substrates</topic><topic>Low temperature</topic><topic>Molybdenum</topic><topic>Numerical analysis</topic><topic>Open circuit voltage</topic><topic>photodetector</topic><topic>Photodiodes</topic><topic>Photonic band gap</topic><topic>Scanning electron microscopy</topic><topic>Schottky diodes</topic><topic>Semiconductor device measurement</topic><topic>Temperature</topic><topic>Temperature dependence</topic><topic>Temperature distribution</topic><topic>Temperature measurement</topic><topic>Thin films</topic><topic>X-ray scattering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yavru, Celal Alp</creatorcontrib><creatorcontrib>Kaleli, Murat</creatorcontrib><creatorcontrib>Serkan Uncu, Ismail</creatorcontrib><creatorcontrib>Akyurekli, Salih</creatorcontrib><creatorcontrib>Aldemir, Durmus Ali</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yavru, Celal Alp</au><au>Kaleli, Murat</au><au>Serkan Uncu, Ismail</au><au>Akyurekli, Salih</au><au>Aldemir, Durmus Ali</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance of Yb/p-CIGS Schottky Photodiodes at Low Temperatures</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2024-12-01</date><risdate>2024</risdate><volume>71</volume><issue>12</issue><spage>7569</spage><epage>7574</epage><pages>7569-7574</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[The Yb/p-Cu(InxGa<inline-formula> <tex-math notation="LaTeX">_{{x}-{1}} </tex-math></inline-formula>)Se2 (CIGS) Schottky photodiodes were fabricated on Mo-coated glass substrates. Structural and morphological characterizations of the CIGS on the Mo layer were investigated. The current-voltage (I-V) characteristics of the produced devices were performed for dark and solar light (100 mW/cm2) in the temperature range of 40-300 K. The activation energy (<inline-formula> <tex-math notation="LaTeX">{E}_{a} </tex-math></inline-formula>) was found to be 0.645 eV from the temperature dependence of the open circuit voltage. It was determined that this value is very close to half of the bandgap of CIGS thin films (<inline-formula> <tex-math notation="LaTeX">{E}_{g} </tex-math></inline-formula>, 1.35 eV for this study). The responsivity and detectivity values were calculated for a wide temperature range. The responsivity value decreased and the detectivity value increased with the decrease in temperature. The highest responsivity value was found as 14.3 mA/W at 280 K. The highest detectivity value was calculated as <inline-formula> <tex-math notation="LaTeX">{4.97} \times {10}^{{9}} </tex-math></inline-formula> Jones at 60 K. The suitability of the produced devices for photodetector applications at low temperatures has been investigated.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2024.3475992</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-3290-2020</orcidid><orcidid>https://orcid.org/0000-0003-4819-840X</orcidid><orcidid>https://orcid.org/0000-0001-6005-667X</orcidid><orcidid>https://orcid.org/0000-0003-4932-0382</orcidid><orcidid>https://orcid.org/0000-0003-4345-761X</orcidid></addata></record> |
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| subjects | Activation energy Copper Copper indium gallium selenides Cu(InₓGaₓ−₁)Se₂ (CIGS) films Current voltage characteristics electrical properties energy dispersive spectroscopy (EDS) mapping Glass substrates Low temperature Molybdenum Numerical analysis Open circuit voltage photodetector Photodiodes Photonic band gap Scanning electron microscopy Schottky diodes Semiconductor device measurement Temperature Temperature dependence Temperature distribution Temperature measurement Thin films X-ray scattering |
| title | Performance of Yb/p-CIGS Schottky Photodiodes at Low Temperatures |
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