Slope Efficiency and Voltage Reduction at High Current Densities in AlInGaAs Diode Lasers

The slope efficiency and drive voltage of broad area AlInGaAs laser diodes near 865 nm is observed to decrease significantly under quasi-CW pulsed operation at currents well above threshold, in a manner that cannot be explained by thermal effects or carrier leakage over heterojunction barriers. Simu...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2025-03, Vol.31 (2: Pwr. and Effic. Scaling in Semiconductor Lasers), p.1-8
Hauptverfasser:	Deri, Robert J., Fenwick, William E., Li, Jiang, Pope, David L., Boisselle, Matthew C., Dutra, David M., Martin, Logan, Crowley, Mark T., Thiagarajan, Prabhu, Thaler, Gerald T.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Current carriers Diode lasers Efficiency Heat sinks Heterojunctions Junctions Laser excitation power conversion Pump lasers quantum well lasers semiconductor device modeling Semiconductor lasers Simulators Temperature dependence Temperature distribution Temperature effects Temperature measurement Voltage reduction Waveguide lasers Waveguides
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