Advancing the Understanding of Reliability in BEOL-Compatible Oxide Semiconductor Transistors: The Impact of AC PBTI

This article presents an in-depth investigation into the impact of alternating current (ac) and direct current (dc) positive bias temperature instability (PBTI) on hydrogen (H) formation in oxide semiconductor field-effect transistors (OSFETs). Utilizing highly stable co-sputtered indium-gallium-zin...

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Veröffentlicht in:	IEEE transactions on electron devices 2024-12, Vol.71 (12), p.7992-7998
Hauptverfasser:	Liu, Gan, Kong, Qiwen, Zhou, Zuopu, Xu, Ying, Sun, Chen, Han, Kaizhen, Kang, Yuye, Zhang, Dong, Wang, Xiaolin, Feng, Yang, Shi, Wei, Nguyen, Bich-Yen, Ni, Kai, Liang, Gengchiau, Gong, Xiao
Format:	Artikel
Sprache:	eng
Schlagworte:	Alternating current Alternating current (ac) Degradation Direct current Electrons Fabrication Field effect transistors Gallium High temperature high-k metal gate (HKMG) Hydrogen Logic gates Nickel oxide semiconductor field-effect transistors (OSFETs) Performance evaluation positive bias temperature instability (PBTI) Reliability Semiconductor devices Stress Threshold voltage Tin oxides Transistors
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