Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier

Enhancement-mode pseudomorphic inverted HEMT for low noise amplifier

Characteristics of the pseudomorphic inverted HEMT (P-I-HEMT) are compared with those of the pseudomorphic HEMT. Both devices were fabricated in enhancement mode by the same process. P-I-HEMT shows a higher maximum transconductance of 590 mS/mm, and higher K-value of 600 mS/Vmm at a threshold voltag...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1991-12, Vol.39 (12), p.1995-2000
Hauptverfasser: Ohmuro, K., Fujishiro, H.I., Itoh, M., Nakamura, H., Nishi, S.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Artificial intelligence
Carrier confinement
Electronics
Exact sciences and technology
Fabrication
FETs
HEMTs
Low-noise amplifiers
PHEMTs
Resists
Semiconductor device noise
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Voltage
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Zusammenfassung:Characteristics of the pseudomorphic inverted HEMT (P-I-HEMT) are compared with those of the pseudomorphic HEMT. Both devices were fabricated in enhancement mode by the same process. P-I-HEMT shows a higher maximum transconductance of 590 mS/mm, and higher K-value of 600 mS/Vmm at a threshold voltage of O V, and better pinch-off characteristics than its counterpart. Noise characteristics of P-I-HEMT are reported. Lower noise figure (1.0 dB at 18 GHz) was obtained in the P-I-HEMT. It is concluded that the P-I-HEMT shows far better noise characteristics than the other at low drain voltage and current.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.106538