La-Doped HZO (La:HZO) Ferroelectric Devices Toward High-Temperature Application
This work reports lanthanum-doped hafnium zirconium oxide (La:HZO) ferroelectric (FE) devices with polarization behavior in high-temperature conditions spanning 25 °C-300 °C. Our findings reveal a significant transition to antiferroelectric (anti-FE)-like behavior as temperature rises, accompanied b...
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| Veröffentlicht in: | IEEE transactions on electron devices 2024-09, Vol.71 (9), p.5375-5379 |
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| container_title | IEEE transactions on electron devices |
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| creator | Xu, Kangli Wang, Tianyu Liu, Yongkai Yu, Jiajie Liu, Yinchi Li, Zhenhai Meng, Jialin Zhu, Hao Sun, Qingqing Wei Zhang, David Chen, Lin |
| description | This work reports lanthanum-doped hafnium zirconium oxide (La:HZO) ferroelectric (FE) devices with polarization behavior in high-temperature conditions spanning 25 °C-300 °C. Our findings reveal a significant transition to antiferroelectric (anti-FE)-like behavior as temperature rises, accompanied by a decline in remnant polarization ( {P} _{\text {r}} ). In addition, the temperature-dependent endurance behavior in La:HZO FE devices shows that the anti-FE polarization behavior in the pristine state can be waken to pure FE hysteresis by field cycling below 150 °C. As the temperature further increases over 200 °C, earlier dielectric breakdown of the devices was observed, which may be attributed to the suppression of wake-up effect and increased leakage. These experimental insights provide crucial understanding and potential advance for the functionality of HZO-based FE devices in high-temperature environments. |
| doi_str_mv | 10.1109/TED.2024.3434778 |
| format | Article |
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Our findings reveal a significant transition to antiferroelectric (anti-FE)-like behavior as temperature rises, accompanied by a decline in remnant polarization (<inline-formula> <tex-math notation="LaTeX">{P} _{\text {r}} </tex-math></inline-formula>). In addition, the temperature-dependent endurance behavior in La:HZO FE devices shows that the anti-FE polarization behavior in the pristine state can be waken to pure FE hysteresis by field cycling below 150 °C. As the temperature further increases over 200 °C, earlier dielectric breakdown of the devices was observed, which may be attributed to the suppression of wake-up effect and increased leakage. These experimental insights provide crucial understanding and potential advance for the functionality of HZO-based FE devices in high-temperature environments.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2024.3434778</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitors ; Electric fields ; Ferroelectric (FE) memory ; high-temperature condition ; Hysteresis ; Iron ; lanthanum-doped hafnium zirconium oxide (La:HZO) ; Plasma temperature ; Temperature distribution ; Temperature measurement</subject><ispartof>IEEE transactions on electron devices, 2024-09, Vol.71 (9), p.5375-5379</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c147t-1e9802a9f2717e6d4cce02c28f7d1803ca2c011127fac83a5a5c8ef9676849e63</cites><orcidid>0000-0002-8077-3593 ; 0000-0002-6533-1834 ; 0000-0002-7145-7564 ; 0000-0002-2166-3220 ; 0000-0001-8114-3481 ; 0000-0003-3890-6871</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10623411$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10623411$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Xu, Kangli</creatorcontrib><creatorcontrib>Wang, Tianyu</creatorcontrib><creatorcontrib>Liu, Yongkai</creatorcontrib><creatorcontrib>Yu, Jiajie</creatorcontrib><creatorcontrib>Liu, Yinchi</creatorcontrib><creatorcontrib>Li, Zhenhai</creatorcontrib><creatorcontrib>Meng, Jialin</creatorcontrib><creatorcontrib>Zhu, Hao</creatorcontrib><creatorcontrib>Sun, Qingqing</creatorcontrib><creatorcontrib>Wei Zhang, David</creatorcontrib><creatorcontrib>Chen, Lin</creatorcontrib><title>La-Doped HZO (La:HZO) Ferroelectric Devices Toward High-Temperature Application</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>This work reports lanthanum-doped hafnium zirconium oxide (La:HZO) ferroelectric (FE) devices with polarization behavior in high-temperature conditions spanning 25 °C-300 °C. Our findings reveal a significant transition to antiferroelectric (anti-FE)-like behavior as temperature rises, accompanied by a decline in remnant polarization (<inline-formula> <tex-math notation="LaTeX">{P} _{\text {r}} </tex-math></inline-formula>). In addition, the temperature-dependent endurance behavior in La:HZO FE devices shows that the anti-FE polarization behavior in the pristine state can be waken to pure FE hysteresis by field cycling below 150 °C. As the temperature further increases over 200 °C, earlier dielectric breakdown of the devices was observed, which may be attributed to the suppression of wake-up effect and increased leakage. These experimental insights provide crucial understanding and potential advance for the functionality of HZO-based FE devices in high-temperature environments.</description><subject>Capacitors</subject><subject>Electric fields</subject><subject>Ferroelectric (FE) memory</subject><subject>high-temperature condition</subject><subject>Hysteresis</subject><subject>Iron</subject><subject>lanthanum-doped hafnium zirconium oxide (La:HZO)</subject><subject>Plasma temperature</subject><subject>Temperature distribution</subject><subject>Temperature measurement</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkDtPwzAUhS0EEqWwMzBkhMHF13b8YKv6oEiRuoSFJbJub8CoJZETQP33pGoHpqMjne8MH2O3ICYAwj-Wi_lECqknSittrTtjI8hzy73R5pyNhADHvXLqkl113edQjdZyxNZF4POmpU22eltn90V4GvIhW1JKDW0J-xQxm9NPROqysvkNaVjG9w9e0q6lFPrvRNm0bbcRQx-br2t2UYdtRzenHLPX5aKcrXixfn6ZTQuOoG3PgbwTMvhaWrBkNhqRhETparsBJxQGiQIApK0DOhXykKOj2htrnPZk1JiJ4y-mpusS1VWb4i6kfQWiOgipBiHVQUh1EjIgd0ckEtG_uZFKA6g_pONbLg</recordid><startdate>202409</startdate><enddate>202409</enddate><creator>Xu, Kangli</creator><creator>Wang, Tianyu</creator><creator>Liu, Yongkai</creator><creator>Yu, Jiajie</creator><creator>Liu, Yinchi</creator><creator>Li, Zhenhai</creator><creator>Meng, Jialin</creator><creator>Zhu, Hao</creator><creator>Sun, Qingqing</creator><creator>Wei Zhang, David</creator><creator>Chen, Lin</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-8077-3593</orcidid><orcidid>https://orcid.org/0000-0002-6533-1834</orcidid><orcidid>https://orcid.org/0000-0002-7145-7564</orcidid><orcidid>https://orcid.org/0000-0002-2166-3220</orcidid><orcidid>https://orcid.org/0000-0001-8114-3481</orcidid><orcidid>https://orcid.org/0000-0003-3890-6871</orcidid></search><sort><creationdate>202409</creationdate><title>La-Doped HZO (La:HZO) Ferroelectric Devices Toward High-Temperature Application</title><author>Xu, Kangli ; Wang, Tianyu ; Liu, Yongkai ; Yu, Jiajie ; Liu, Yinchi ; Li, Zhenhai ; Meng, Jialin ; Zhu, Hao ; Sun, Qingqing ; Wei Zhang, David ; Chen, Lin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c147t-1e9802a9f2717e6d4cce02c28f7d1803ca2c011127fac83a5a5c8ef9676849e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Capacitors</topic><topic>Electric fields</topic><topic>Ferroelectric (FE) memory</topic><topic>high-temperature condition</topic><topic>Hysteresis</topic><topic>Iron</topic><topic>lanthanum-doped hafnium zirconium oxide (La:HZO)</topic><topic>Plasma temperature</topic><topic>Temperature distribution</topic><topic>Temperature measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xu, Kangli</creatorcontrib><creatorcontrib>Wang, Tianyu</creatorcontrib><creatorcontrib>Liu, Yongkai</creatorcontrib><creatorcontrib>Yu, Jiajie</creatorcontrib><creatorcontrib>Liu, Yinchi</creatorcontrib><creatorcontrib>Li, Zhenhai</creatorcontrib><creatorcontrib>Meng, Jialin</creatorcontrib><creatorcontrib>Zhu, Hao</creatorcontrib><creatorcontrib>Sun, Qingqing</creatorcontrib><creatorcontrib>Wei Zhang, David</creatorcontrib><creatorcontrib>Chen, Lin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xu, Kangli</au><au>Wang, Tianyu</au><au>Liu, Yongkai</au><au>Yu, Jiajie</au><au>Liu, Yinchi</au><au>Li, Zhenhai</au><au>Meng, Jialin</au><au>Zhu, Hao</au><au>Sun, Qingqing</au><au>Wei Zhang, David</au><au>Chen, Lin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>La-Doped HZO (La:HZO) Ferroelectric Devices Toward High-Temperature Application</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2024-09</date><risdate>2024</risdate><volume>71</volume><issue>9</issue><spage>5375</spage><epage>5379</epage><pages>5375-5379</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>This work reports lanthanum-doped hafnium zirconium oxide (La:HZO) ferroelectric (FE) devices with polarization behavior in high-temperature conditions spanning 25 °C-300 °C. Our findings reveal a significant transition to antiferroelectric (anti-FE)-like behavior as temperature rises, accompanied by a decline in remnant polarization (<inline-formula> <tex-math notation="LaTeX">{P} _{\text {r}} </tex-math></inline-formula>). In addition, the temperature-dependent endurance behavior in La:HZO FE devices shows that the anti-FE polarization behavior in the pristine state can be waken to pure FE hysteresis by field cycling below 150 °C. As the temperature further increases over 200 °C, earlier dielectric breakdown of the devices was observed, which may be attributed to the suppression of wake-up effect and increased leakage. 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| subjects | Capacitors Electric fields Ferroelectric (FE) memory high-temperature condition Hysteresis Iron lanthanum-doped hafnium zirconium oxide (La:HZO) Plasma temperature Temperature distribution Temperature measurement |
| title | La-Doped HZO (La:HZO) Ferroelectric Devices Toward High-Temperature Application |
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