Structural and Electrical Characteristics of GaN HEMTs With In Situ SiNx Gate Dielectrics Grown by Rationally Modulated N2/H2 Carrier Gas

In situ SiNx is recognized as a promising dielectric and passivation layer for GaN high-electron-mobility transistors (HEMTs). Herein, the growth mechanisms and material properties of the in situ SiNx are studied by comparing the dielectrics grown under three different carrier gases including N2 (N2...

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Veröffentlicht in:	IEEE transactions on electron devices 2024-08, Vol.71 (8), p.4590-4595
Hauptverfasser:	Huang, Zhe, Zhang, Haochen, Chen, Yao, Liang, Fangzhou, Yang, Lei, Liang, Kun, Xing, Zhanyong, Wang, Hu, Zhang, Mingshuo, Li, Jiayao, Ye, Yankai, Guo, Shiping, Sun, Haiding
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier gas Dielectrics electrical stress Etching GaN high-electron-mobility transistors (HEMTs) HEMTs in situ SiNx metal-organic chemical vapor deposition (MOCVD) Modulation Morphology Surface morphology Wide band gap semiconductors
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