Radiation Hardness of Modern Photogate Pixels Under Total Ionizing Dose: Impact of Pixel Pitch and Electron or Hole Collection
Gamma and X-ray irradiation results are reported on several variants of deep-trench photogate research and development pixels from STMicroelectronics. Dark current performances are compared for electron and hole-collecting pixels (n, p-type) of 2 and 1~{\mu } m pitch. Total ionizing dose (TID) resu...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2024-08, Vol.71 (8), p.1766-1773 |
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| container_title | IEEE transactions on nuclear science |
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| creator | Malherbe, Victor Nier, Olivier Moindjie, Soilihi Roche, Philippe Roy, Francois Tournier, Arnaud |
| description | Gamma and X-ray irradiation results are reported on several variants of deep-trench photogate research and development pixels from STMicroelectronics. Dark current performances are compared for electron and hole-collecting pixels (n, p-type) of 2 and 1~{\mu } m pitch. Total ionizing dose (TID) results on 2~{\mu } m p-type photogates are generally consistent with previous studies, showing state-of-the-art radiation tolerance at 70 kGy (Si); 1~{\mu } m n-type pixels are found to quickly degrade under radiation, in line with expectations; 1~{\mu } m p-type photogates exhibit very promising radiation hardness, improving on the 2~{\mu } m p-type results by more than two orders of magnitude, with a dark current below 50 h+/s after 40 kGy gamma rays or 64 kGy (Si) X-rays. |
| doi_str_mv | 10.1109/TNS.2024.3426077 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_ieee_primary_10592004</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10592004</ieee_id><sourcerecordid>10_1109_TNS_2024_3426077</sourcerecordid><originalsourceid>FETCH-LOGICAL-c147t-1e3b70ca315bbb890f41661e01dcf4391a24da85cf9f7db1f226bd9e387886aa3</originalsourceid><addsrcrecordid>eNpNkD9PwzAQxS0EEqWwMzD4C6T4Ejux2VApNFKBCto5cvynDUrjyvYADHx2EtqB5U739N496YfQNZAJABG3q5f3SUpSOslompOiOEEjYIwnwAp-ikaEAE8EFeIcXYTw0Z-UETZCP29SNzI2rsNz6XVnQsDO4menje_wcuui28ho8LL5NG3A667X8cpF2eLSdc13023wgwvmDpe7vVRxCP95-xnVFstO41lrVPR9g_N47lqDp64dpL70Ep1Z2QZzddxjtH6crabzZPH6VE7vF4kCWsQETFYXRMkMWF3XXBBLIc_BENDK0kyATKmWnCkrbKFrsGma11qYjBec51JmY0QOf5V3IXhjq71vdtJ_VUCqgV_V86sGftWRXx-5OUQaY8w_OxMpITT7BW0tbag</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Radiation Hardness of Modern Photogate Pixels Under Total Ionizing Dose: Impact of Pixel Pitch and Electron or Hole Collection</title><source>IEEE Electronic Library (IEL)</source><creator>Malherbe, Victor ; Nier, Olivier ; Moindjie, Soilihi ; Roche, Philippe ; Roy, Francois ; Tournier, Arnaud</creator><creatorcontrib>Malherbe, Victor ; Nier, Olivier ; Moindjie, Soilihi ; Roche, Philippe ; Roy, Francois ; Tournier, Arnaud</creatorcontrib><description><![CDATA[Gamma and X-ray irradiation results are reported on several variants of deep-trench photogate research and development pixels from STMicroelectronics. Dark current performances are compared for electron and hole-collecting pixels (n, p-type) of 2 and <inline-formula> <tex-math notation="LaTeX">1~{\mu } </tex-math></inline-formula>m pitch. Total ionizing dose (TID) results on <inline-formula> <tex-math notation="LaTeX">2~{\mu } </tex-math></inline-formula>m p-type photogates are generally consistent with previous studies, showing state-of-the-art radiation tolerance at 70 kGy (Si); <inline-formula> <tex-math notation="LaTeX">1~{\mu } </tex-math></inline-formula>m n-type pixels are found to quickly degrade under radiation, in line with expectations; <inline-formula> <tex-math notation="LaTeX">1~{\mu } </tex-math></inline-formula>m p-type photogates exhibit very promising radiation hardness, improving on the <inline-formula> <tex-math notation="LaTeX">2~{\mu } </tex-math></inline-formula>m p-type results by more than two orders of magnitude, with a dark current below 50 h+/s after 40 kGy gamma rays or 64 kGy (Si) X-rays.]]></description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2024.3426077</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitive deep trench isolation (CDTI) ; CMOS image sensor (CIS) ; Dark current ; Gamma-rays ; hole collection pixel ; Passivation ; photogate pixel ; radiation effects ; Research and development ; Silicon ; small pitch pixel ; Temperature measurement ; total ionizing dose (TID) ; X-ray imaging ; X-rays</subject><ispartof>IEEE transactions on nuclear science, 2024-08, Vol.71 (8), p.1766-1773</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c147t-1e3b70ca315bbb890f41661e01dcf4391a24da85cf9f7db1f226bd9e387886aa3</cites><orcidid>0000-0002-5129-9642</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10592004$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10592004$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Malherbe, Victor</creatorcontrib><creatorcontrib>Nier, Olivier</creatorcontrib><creatorcontrib>Moindjie, Soilihi</creatorcontrib><creatorcontrib>Roche, Philippe</creatorcontrib><creatorcontrib>Roy, Francois</creatorcontrib><creatorcontrib>Tournier, Arnaud</creatorcontrib><title>Radiation Hardness of Modern Photogate Pixels Under Total Ionizing Dose: Impact of Pixel Pitch and Electron or Hole Collection</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description><![CDATA[Gamma and X-ray irradiation results are reported on several variants of deep-trench photogate research and development pixels from STMicroelectronics. Dark current performances are compared for electron and hole-collecting pixels (n, p-type) of 2 and <inline-formula> <tex-math notation="LaTeX">1~{\mu } </tex-math></inline-formula>m pitch. Total ionizing dose (TID) results on <inline-formula> <tex-math notation="LaTeX">2~{\mu } </tex-math></inline-formula>m p-type photogates are generally consistent with previous studies, showing state-of-the-art radiation tolerance at 70 kGy (Si); <inline-formula> <tex-math notation="LaTeX">1~{\mu } </tex-math></inline-formula>m n-type pixels are found to quickly degrade under radiation, in line with expectations; <inline-formula> <tex-math notation="LaTeX">1~{\mu } </tex-math></inline-formula>m p-type photogates exhibit very promising radiation hardness, improving on the <inline-formula> <tex-math notation="LaTeX">2~{\mu } </tex-math></inline-formula>m p-type results by more than two orders of magnitude, with a dark current below 50 h+/s after 40 kGy gamma rays or 64 kGy (Si) X-rays.]]></description><subject>Capacitive deep trench isolation (CDTI)</subject><subject>CMOS image sensor (CIS)</subject><subject>Dark current</subject><subject>Gamma-rays</subject><subject>hole collection pixel</subject><subject>Passivation</subject><subject>photogate pixel</subject><subject>radiation effects</subject><subject>Research and development</subject><subject>Silicon</subject><subject>small pitch pixel</subject><subject>Temperature measurement</subject><subject>total ionizing dose (TID)</subject><subject>X-ray imaging</subject><subject>X-rays</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkD9PwzAQxS0EEqWwMzD4C6T4Ejux2VApNFKBCto5cvynDUrjyvYADHx2EtqB5U739N496YfQNZAJABG3q5f3SUpSOslompOiOEEjYIwnwAp-ikaEAE8EFeIcXYTw0Z-UETZCP29SNzI2rsNz6XVnQsDO4menje_wcuui28ho8LL5NG3A667X8cpF2eLSdc13023wgwvmDpe7vVRxCP95-xnVFstO41lrVPR9g_N47lqDp64dpL70Ep1Z2QZzddxjtH6crabzZPH6VE7vF4kCWsQETFYXRMkMWF3XXBBLIc_BENDK0kyATKmWnCkrbKFrsGma11qYjBec51JmY0QOf5V3IXhjq71vdtJ_VUCqgV_V86sGftWRXx-5OUQaY8w_OxMpITT7BW0tbag</recordid><startdate>202408</startdate><enddate>202408</enddate><creator>Malherbe, Victor</creator><creator>Nier, Olivier</creator><creator>Moindjie, Soilihi</creator><creator>Roche, Philippe</creator><creator>Roy, Francois</creator><creator>Tournier, Arnaud</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-5129-9642</orcidid></search><sort><creationdate>202408</creationdate><title>Radiation Hardness of Modern Photogate Pixels Under Total Ionizing Dose: Impact of Pixel Pitch and Electron or Hole Collection</title><author>Malherbe, Victor ; Nier, Olivier ; Moindjie, Soilihi ; Roche, Philippe ; Roy, Francois ; Tournier, Arnaud</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c147t-1e3b70ca315bbb890f41661e01dcf4391a24da85cf9f7db1f226bd9e387886aa3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Capacitive deep trench isolation (CDTI)</topic><topic>CMOS image sensor (CIS)</topic><topic>Dark current</topic><topic>Gamma-rays</topic><topic>hole collection pixel</topic><topic>Passivation</topic><topic>photogate pixel</topic><topic>radiation effects</topic><topic>Research and development</topic><topic>Silicon</topic><topic>small pitch pixel</topic><topic>Temperature measurement</topic><topic>total ionizing dose (TID)</topic><topic>X-ray imaging</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Malherbe, Victor</creatorcontrib><creatorcontrib>Nier, Olivier</creatorcontrib><creatorcontrib>Moindjie, Soilihi</creatorcontrib><creatorcontrib>Roche, Philippe</creatorcontrib><creatorcontrib>Roy, Francois</creatorcontrib><creatorcontrib>Tournier, Arnaud</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Malherbe, Victor</au><au>Nier, Olivier</au><au>Moindjie, Soilihi</au><au>Roche, Philippe</au><au>Roy, Francois</au><au>Tournier, Arnaud</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Radiation Hardness of Modern Photogate Pixels Under Total Ionizing Dose: Impact of Pixel Pitch and Electron or Hole Collection</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2024-08</date><risdate>2024</risdate><volume>71</volume><issue>8</issue><spage>1766</spage><epage>1773</epage><pages>1766-1773</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract><![CDATA[Gamma and X-ray irradiation results are reported on several variants of deep-trench photogate research and development pixels from STMicroelectronics. Dark current performances are compared for electron and hole-collecting pixels (n, p-type) of 2 and <inline-formula> <tex-math notation="LaTeX">1~{\mu } </tex-math></inline-formula>m pitch. Total ionizing dose (TID) results on <inline-formula> <tex-math notation="LaTeX">2~{\mu } </tex-math></inline-formula>m p-type photogates are generally consistent with previous studies, showing state-of-the-art radiation tolerance at 70 kGy (Si); <inline-formula> <tex-math notation="LaTeX">1~{\mu } </tex-math></inline-formula>m n-type pixels are found to quickly degrade under radiation, in line with expectations; <inline-formula> <tex-math notation="LaTeX">1~{\mu } </tex-math></inline-formula>m p-type photogates exhibit very promising radiation hardness, improving on the <inline-formula> <tex-math notation="LaTeX">2~{\mu } </tex-math></inline-formula>m p-type results by more than two orders of magnitude, with a dark current below 50 h+/s after 40 kGy gamma rays or 64 kGy (Si) X-rays.]]></abstract><pub>IEEE</pub><doi>10.1109/TNS.2024.3426077</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-5129-9642</orcidid></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Capacitive deep trench isolation (CDTI) CMOS image sensor (CIS) Dark current Gamma-rays hole collection pixel Passivation photogate pixel radiation effects Research and development Silicon small pitch pixel Temperature measurement total ionizing dose (TID) X-ray imaging X-rays |
| title | Radiation Hardness of Modern Photogate Pixels Under Total Ionizing Dose: Impact of Pixel Pitch and Electron or Hole Collection |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T19%3A43%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Radiation%20Hardness%20of%20Modern%20Photogate%20Pixels%20Under%20Total%20Ionizing%20Dose:%20Impact%20of%20Pixel%20Pitch%20and%20Electron%20or%20Hole%20Collection&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Malherbe,%20Victor&rft.date=2024-08&rft.volume=71&rft.issue=8&rft.spage=1766&rft.epage=1773&rft.pages=1766-1773&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2024.3426077&rft_dat=%3Ccrossref_RIE%3E10_1109_TNS_2024_3426077%3C/crossref_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=10592004&rfr_iscdi=true |