Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors
This study investigates the DC and RF performance of RF GaN High Electron Mobility Transistors (HEMTs) subjected to surface pretreatments by N 2 and N 2 O plasma. The filling of nitrogen vacancies or the passivation effect introduced by the thin GaON layer result in enhanced DC characteristics and R...
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| Veröffentlicht in: | IEEE journal of the Electron Devices Society 2024, Vol.12, p.875-880 |
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| container_title | IEEE journal of the Electron Devices Society |
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| creator | Hu, Qiaoyu Cheng, Wei-Chih Chen, Xiguang Deng, Chenkai Liao, Lina Li, Wenmao Jiang, Yang He, Jiaqi Zhang, Yi Tang, Chuying Wang, Peiran Wen, Kangyao Du, Fangzhou Cui, Yifan Li, Mujun Yu, Wenyue Sokolovskij, Robert Tao, Nick Wang, Qing Yu, Hongyu |
| description | This study investigates the DC and RF performance of RF GaN High Electron Mobility Transistors (HEMTs) subjected to surface pretreatments by N 2 and N 2 O plasma. The filling of nitrogen vacancies or the passivation effect introduced by the thin GaON layer result in enhanced DC characteristics and RF performance for devices treated with nitrogen-based plasma. Compared to the untreated device, the device treated with N 2 plasma exhibited a significant improvement in performance, i.e., the saturated current increased by approximately 16%, the characteristic frequency (f T ) had an increase of 27.6 GHz, the maximum oscillating frequency (f max ) increased by 60.4 GHz. Furthermore, the breakdown voltage had a 10.7% increase, and the dynamic/static on-resistance ratio decreased from 1.34 to 1.18. These results highlight the potential of nitrogen-based plasma treatments in improving the performance of RF GaN HEMTs. |
| doi_str_mv | 10.1109/JEDS.2024.3412186 |
| format | Article |
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The filling of nitrogen vacancies or the passivation effect introduced by the thin GaON layer result in enhanced DC characteristics and RF performance for devices treated with nitrogen-based plasma. Compared to the untreated device, the device treated with N 2 plasma exhibited a significant improvement in performance, i.e., the saturated current increased by approximately 16%, the characteristic frequency (f T ) had an increase of 27.6 GHz, the maximum oscillating frequency (f max ) increased by 60.4 GHz. Furthermore, the breakdown voltage had a 10.7% increase, and the dynamic/static on-resistance ratio decreased from 1.34 to 1.18. These results highlight the potential of nitrogen-based plasma treatments in improving the performance of RF GaN HEMTs.</description><identifier>ISSN: 2168-6734</identifier><identifier>EISSN: 2168-6734</identifier><identifier>DOI: 10.1109/JEDS.2024.3412186</identifier><identifier>CODEN: IJEDAC</identifier><language>eng</language><publisher>IEEE</publisher><subject>Gallium nitride ; GaN ; HEMTs ; MODFETs ; Passivation ; Performance evaluation ; plasma treatment ; Plasmas ; Radio frequency</subject><ispartof>IEEE journal of the Electron Devices Society, 2024, Vol.12, p.875-880</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c327t-489473280d8d6c6580fed811493e855889509830aa89eddd4da268dcdaff85003</cites><orcidid>0009-0001-9121-5212 ; 0000-0002-5430-2931 ; 0000-0002-5478-5662 ; 0009-0005-5358-4921 ; 0000-0001-9585-353X ; 0000-0001-8155-8302 ; 0000-0001-9242-2718 ; 0000-0002-8151-8092 ; 0000-0002-9638-8489 ; 0000-0002-5756-868X ; 0000-0003-4884-3333 ; 0000-0003-0447-9672 ; 0000-0002-4818-6057</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10552704$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,860,2096,4010,27610,27900,27901,27902,54908</link.rule.ids></links><search><creatorcontrib>Hu, Qiaoyu</creatorcontrib><creatorcontrib>Cheng, Wei-Chih</creatorcontrib><creatorcontrib>Chen, Xiguang</creatorcontrib><creatorcontrib>Deng, Chenkai</creatorcontrib><creatorcontrib>Liao, Lina</creatorcontrib><creatorcontrib>Li, Wenmao</creatorcontrib><creatorcontrib>Jiang, Yang</creatorcontrib><creatorcontrib>He, Jiaqi</creatorcontrib><creatorcontrib>Zhang, Yi</creatorcontrib><creatorcontrib>Tang, Chuying</creatorcontrib><creatorcontrib>Wang, Peiran</creatorcontrib><creatorcontrib>Wen, Kangyao</creatorcontrib><creatorcontrib>Du, Fangzhou</creatorcontrib><creatorcontrib>Cui, Yifan</creatorcontrib><creatorcontrib>Li, Mujun</creatorcontrib><creatorcontrib>Yu, Wenyue</creatorcontrib><creatorcontrib>Sokolovskij, Robert</creatorcontrib><creatorcontrib>Tao, Nick</creatorcontrib><creatorcontrib>Wang, Qing</creatorcontrib><creatorcontrib>Yu, Hongyu</creatorcontrib><title>Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors</title><title>IEEE journal of the Electron Devices Society</title><addtitle>JEDS</addtitle><description>This study investigates the DC and RF performance of RF GaN High Electron Mobility Transistors (HEMTs) subjected to surface pretreatments by N 2 and N 2 O plasma. The filling of nitrogen vacancies or the passivation effect introduced by the thin GaON layer result in enhanced DC characteristics and RF performance for devices treated with nitrogen-based plasma. Compared to the untreated device, the device treated with N 2 plasma exhibited a significant improvement in performance, i.e., the saturated current increased by approximately 16%, the characteristic frequency (f T ) had an increase of 27.6 GHz, the maximum oscillating frequency (f max ) increased by 60.4 GHz. Furthermore, the breakdown voltage had a 10.7% increase, and the dynamic/static on-resistance ratio decreased from 1.34 to 1.18. 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The filling of nitrogen vacancies or the passivation effect introduced by the thin GaON layer result in enhanced DC characteristics and RF performance for devices treated with nitrogen-based plasma. Compared to the untreated device, the device treated with N 2 plasma exhibited a significant improvement in performance, i.e., the saturated current increased by approximately 16%, the characteristic frequency (f T ) had an increase of 27.6 GHz, the maximum oscillating frequency (f max ) increased by 60.4 GHz. Furthermore, the breakdown voltage had a 10.7% increase, and the dynamic/static on-resistance ratio decreased from 1.34 to 1.18. 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| source | IEEE Open Access Journals; DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals |
| subjects | Gallium nitride GaN HEMTs MODFETs Passivation Performance evaluation plasma treatment Plasmas Radio frequency |
| title | Investigation of Nitrogen-Based Plasma Passivation on GaN RF HEMTs Using Various Precursors |
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