A Theoretical Analysis of Ferroelectric Switching Physics in Metal/Ferroelectric/IGZO Stack Toward Interlayer-Free FeFETs

Compared to Si, IGZO is a competitive choice for FeFET channel material, because of the interlayer-free structure, which can lead to a higher endurance. However, the ferroelectric switching mechanism of erasure remains unclear due to the lack of holes in IGZO. In this work, we present a quasi-static...

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Veröffentlicht in:	IEEE electron device letters 2024-08, Vol.45 (8), p.1453-1456
Hauptverfasser:	Chen, Zhuo, Ronchi, Nicolo, Tang, Hongwei, Walke, Amey M., Izmailov, Roman, Ioana Popovici, Mihaela, Van den Bosch, Geert, Rosmeulen, Maarten, Afanas'ev, Valeri V., Van Houdt, Jan
Format:	Artikel
Sprache:	eng
Schlagworte:	charge balance Competitive materials Conduction bands Electrons FeFET FeFETs ferroelectric Ferroelectric materials Ferroelectricity HZO IGZO Indium gallium zinc oxide Interlayers Ionization Iron MFS oxide semiconductor Photonics physics model Sheet modelling Stress measurement Switches Switching Tin
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