A Dynamic Current Sharing Model of Multichip Parallel SiC MOSFETs Considering Layout-Dominated Mutual Inductance Coupling

Dynamic current imbalance of parallel SiC mosfet s can lead to uneven losses and even thermal runaway. Unbalanced parasitic parameters dominated by layout are one of the main causes of unbalanced dynamic currents. However, a current sharing model that comprehensively considers all inductances and mu...

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Veröffentlicht in:	IEEE transactions on power electronics 2024-09, Vol.39 (9), p.11060-11073
Hauptverfasser:	Zheng, Zexiang, Chen, Cai, Lv, Jianwei, Yan, Yiyang, Liu, Jiaxin, Kang, Yong
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models Couplings Dynamic current sharing model Inductance Integrated circuit modeling MOSFET multichip sic power modules mutual inductance coupling package layout Semiconductor device modeling Silicon carbide
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