Model Based Junction Temperature Profile Control of SiC MOSFETs in DC Power Cycling for Accurate Reliability Assessments

Accurate control of junction temperature swing is crucial in DC power cycling tests for reliability assessments. In this work, a model based aging independent closed-loop junction temperature profile control method is proposed. Specifically, the temperature ramp rate and dwell time at the maximum ju...

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Veröffentlicht in:	IEEE transactions on industry applications 2024-09, Vol.60 (5), p.7216-7224
Hauptverfasser:	Vankayalapati, Bhanu Teja, Sajadi, Rahman, CN, Muhammed Ajmal, Deshmukh, Akshay Vijayrao, Farhadi, Masoud, Akin, Bilal
Format:	Artikel
Sprache:	eng
Schlagworte:	Aging DC power cycling junction temperature Junctions Logic gates reliability Resistance Silicon carbide Silicon carbide MOSFETs Temperature measurement Temperature sensors
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