Mechanical Stress Effects on 4H-Silicon Carbide Power Diodes
This study discusses the effect of stress on 4H-silicon carbide (4H-SiC) power diodes using numerical simulations. Two power diodes were evaluated; namely, a 600 V PiN diode and 1.8 kV junction barrier Schottky (JBS) diode. Stress changes the carrier mobilities in the material of the PiN diode of a...
Gespeichert in:
| Veröffentlicht in: | IEEE open journal of power electronics 2024, Vol.5, p.683-691 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 691 |
|---|---|
| container_issue | |
| container_start_page | 683 |
| container_title | IEEE open journal of power electronics |
| container_volume | 5 |
| creator | Sugiura, Takaya Yamashita, Kazuma Nakano, Nobuhiko |
| description | This study discusses the effect of stress on 4H-silicon carbide (4H-SiC) power diodes using numerical simulations. Two power diodes were evaluated; namely, a 600 V PiN diode and 1.8 kV junction barrier Schottky (JBS) diode. Stress changes the carrier mobilities in the material of the PiN diode of a bipolar diode; that is, the mobility is enhanced by the piezoresistive effect, which minimizes the on-resistance or leakage current. The simulation results demonstrate that compressive stress can have a positive effect on the device operation, particularly in p^+-substrate power diodes. Regarding the JBS diode, the GPa-order tensile stress positively effects both forward and reverse characteristics. A cantilever structure is suitable for JBS diodes, and press-pack packaging for PiN diodes can enhance the device characteristics. |
| doi_str_mv | 10.1109/OJPEL.2024.3400291 |
| format | Article |
| fullrecord | <record><control><sourceid>doaj_ieee_</sourceid><recordid>TN_cdi_ieee_primary_10530063</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10530063</ieee_id><doaj_id>oai_doaj_org_article_70ee468c75d042d1814d2fc5109ed0ae</doaj_id><sourcerecordid>oai_doaj_org_article_70ee468c75d042d1814d2fc5109ed0ae</sourcerecordid><originalsourceid>FETCH-LOGICAL-c329t-660406c27d1a97003c4110f9667e773fe0172529c60f9cca39cf745c697da7203</originalsourceid><addsrcrecordid>eNpNkNtKAzEQhoMoWGpfQLzYF9g6OWzSgDdSq61UWqheh5hMNKV2JVkQ3970gPRqhp_5P4aPkGsKQ0pB3y6el5P5kAETQy4AmKZnpMekEDXlVJyf7JdkkPMayk1DaQl65O4F3afdRmc31apLmHM1CQFdl6t2W4lpvYqb6Mo6tuk9eqyW7Q-m6iG2HvMVuQh2k3FwnH3y9jh5HU_r-eJpNr6f144z3dVSggDpmPLUagXAnSh_By2lQqV4QKCKNUw7WULnLNcuKNE4qZW3igHvk9mB61u7Nt8pftn0a1obzT5o04exqYtug0YBopAjpxoPgnk6osKz4JriCT1YLCx2YLnU5pww_PMomJ1Os9dpdjrNUWcp3RxKERFPCg0HkJz_Aeh0bfs</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Mechanical Stress Effects on 4H-Silicon Carbide Power Diodes</title><source>IEEE Open Access Journals</source><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><creator>Sugiura, Takaya ; Yamashita, Kazuma ; Nakano, Nobuhiko</creator><creatorcontrib>Sugiura, Takaya ; Yamashita, Kazuma ; Nakano, Nobuhiko</creatorcontrib><description>This study discusses the effect of stress on 4H-silicon carbide (4H-SiC) power diodes using numerical simulations. Two power diodes were evaluated; namely, a 600 V PiN diode and 1.8 kV junction barrier Schottky (JBS) diode. Stress changes the carrier mobilities in the material of the PiN diode of a bipolar diode; that is, the mobility is enhanced by the piezoresistive effect, which minimizes the on-resistance or leakage current. The simulation results demonstrate that compressive stress can have a positive effect on the device operation, particularly in p<inline-formula><tex-math notation="LaTeX">^+</tex-math></inline-formula>-substrate power diodes. Regarding the JBS diode, the GPa-order tensile stress positively effects both forward and reverse characteristics. A cantilever structure is suitable for JBS diodes, and press-pack packaging for PiN diodes can enhance the device characteristics.</description><identifier>ISSN: 2644-1314</identifier><identifier>EISSN: 2644-1314</identifier><identifier>DOI: 10.1109/OJPEL.2024.3400291</identifier><identifier>CODEN: IOJPA6</identifier><language>eng</language><publisher>IEEE</publisher><subject>4H-silicon carbide ; Junction barrier Schottky diode ; mechanical stress ; numerical analysis ; Piezoresistance ; PiN diode ; PIN photodiodes ; Power electronics ; Schottky diodes ; Semiconductor process modeling ; Silicon carbide ; Substrates</subject><ispartof>IEEE open journal of power electronics, 2024, Vol.5, p.683-691</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c329t-660406c27d1a97003c4110f9667e773fe0172529c60f9cca39cf745c697da7203</cites><orcidid>0000-0002-2680-386X ; 0000-0001-8427-1227 ; 0009-0003-1527-6130</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10530063$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,860,2096,4010,27610,27900,27901,27902,54908</link.rule.ids></links><search><creatorcontrib>Sugiura, Takaya</creatorcontrib><creatorcontrib>Yamashita, Kazuma</creatorcontrib><creatorcontrib>Nakano, Nobuhiko</creatorcontrib><title>Mechanical Stress Effects on 4H-Silicon Carbide Power Diodes</title><title>IEEE open journal of power electronics</title><addtitle>OJPEL</addtitle><description>This study discusses the effect of stress on 4H-silicon carbide (4H-SiC) power diodes using numerical simulations. Two power diodes were evaluated; namely, a 600 V PiN diode and 1.8 kV junction barrier Schottky (JBS) diode. Stress changes the carrier mobilities in the material of the PiN diode of a bipolar diode; that is, the mobility is enhanced by the piezoresistive effect, which minimizes the on-resistance or leakage current. The simulation results demonstrate that compressive stress can have a positive effect on the device operation, particularly in p<inline-formula><tex-math notation="LaTeX">^+</tex-math></inline-formula>-substrate power diodes. Regarding the JBS diode, the GPa-order tensile stress positively effects both forward and reverse characteristics. A cantilever structure is suitable for JBS diodes, and press-pack packaging for PiN diodes can enhance the device characteristics.</description><subject>4H-silicon carbide</subject><subject>Junction barrier Schottky diode</subject><subject>mechanical stress</subject><subject>numerical analysis</subject><subject>Piezoresistance</subject><subject>PiN diode</subject><subject>PIN photodiodes</subject><subject>Power electronics</subject><subject>Schottky diodes</subject><subject>Semiconductor process modeling</subject><subject>Silicon carbide</subject><subject>Substrates</subject><issn>2644-1314</issn><issn>2644-1314</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpNkNtKAzEQhoMoWGpfQLzYF9g6OWzSgDdSq61UWqheh5hMNKV2JVkQ3970gPRqhp_5P4aPkGsKQ0pB3y6el5P5kAETQy4AmKZnpMekEDXlVJyf7JdkkPMayk1DaQl65O4F3afdRmc31apLmHM1CQFdl6t2W4lpvYqb6Mo6tuk9eqyW7Q-m6iG2HvMVuQh2k3FwnH3y9jh5HU_r-eJpNr6f144z3dVSggDpmPLUagXAnSh_By2lQqV4QKCKNUw7WULnLNcuKNE4qZW3igHvk9mB61u7Nt8pftn0a1obzT5o04exqYtug0YBopAjpxoPgnk6osKz4JriCT1YLCx2YLnU5pww_PMomJ1Os9dpdjrNUWcp3RxKERFPCg0HkJz_Aeh0bfs</recordid><startdate>2024</startdate><enddate>2024</enddate><creator>Sugiura, Takaya</creator><creator>Yamashita, Kazuma</creator><creator>Nakano, Nobuhiko</creator><general>IEEE</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-2680-386X</orcidid><orcidid>https://orcid.org/0000-0001-8427-1227</orcidid><orcidid>https://orcid.org/0009-0003-1527-6130</orcidid></search><sort><creationdate>2024</creationdate><title>Mechanical Stress Effects on 4H-Silicon Carbide Power Diodes</title><author>Sugiura, Takaya ; Yamashita, Kazuma ; Nakano, Nobuhiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c329t-660406c27d1a97003c4110f9667e773fe0172529c60f9cca39cf745c697da7203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>4H-silicon carbide</topic><topic>Junction barrier Schottky diode</topic><topic>mechanical stress</topic><topic>numerical analysis</topic><topic>Piezoresistance</topic><topic>PiN diode</topic><topic>PIN photodiodes</topic><topic>Power electronics</topic><topic>Schottky diodes</topic><topic>Semiconductor process modeling</topic><topic>Silicon carbide</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sugiura, Takaya</creatorcontrib><creatorcontrib>Yamashita, Kazuma</creatorcontrib><creatorcontrib>Nakano, Nobuhiko</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>IEEE open journal of power electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sugiura, Takaya</au><au>Yamashita, Kazuma</au><au>Nakano, Nobuhiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mechanical Stress Effects on 4H-Silicon Carbide Power Diodes</atitle><jtitle>IEEE open journal of power electronics</jtitle><stitle>OJPEL</stitle><date>2024</date><risdate>2024</risdate><volume>5</volume><spage>683</spage><epage>691</epage><pages>683-691</pages><issn>2644-1314</issn><eissn>2644-1314</eissn><coden>IOJPA6</coden><abstract>This study discusses the effect of stress on 4H-silicon carbide (4H-SiC) power diodes using numerical simulations. Two power diodes were evaluated; namely, a 600 V PiN diode and 1.8 kV junction barrier Schottky (JBS) diode. Stress changes the carrier mobilities in the material of the PiN diode of a bipolar diode; that is, the mobility is enhanced by the piezoresistive effect, which minimizes the on-resistance or leakage current. The simulation results demonstrate that compressive stress can have a positive effect on the device operation, particularly in p<inline-formula><tex-math notation="LaTeX">^+</tex-math></inline-formula>-substrate power diodes. Regarding the JBS diode, the GPa-order tensile stress positively effects both forward and reverse characteristics. A cantilever structure is suitable for JBS diodes, and press-pack packaging for PiN diodes can enhance the device characteristics.</abstract><pub>IEEE</pub><doi>10.1109/OJPEL.2024.3400291</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-2680-386X</orcidid><orcidid>https://orcid.org/0000-0001-8427-1227</orcidid><orcidid>https://orcid.org/0009-0003-1527-6130</orcidid><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2644-1314 |
| ispartof | IEEE open journal of power electronics, 2024, Vol.5, p.683-691 |
| issn | 2644-1314 2644-1314 |
| language | eng |
| recordid | cdi_ieee_primary_10530063 |
| source | IEEE Open Access Journals; DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals |
| subjects | 4H-silicon carbide Junction barrier Schottky diode mechanical stress numerical analysis Piezoresistance PiN diode PIN photodiodes Power electronics Schottky diodes Semiconductor process modeling Silicon carbide Substrates |
| title | Mechanical Stress Effects on 4H-Silicon Carbide Power Diodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T14%3A34%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-doaj_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Mechanical%20Stress%20Effects%20on%204H-Silicon%20Carbide%20Power%20Diodes&rft.jtitle=IEEE%20open%20journal%20of%20power%20electronics&rft.au=Sugiura,%20Takaya&rft.date=2024&rft.volume=5&rft.spage=683&rft.epage=691&rft.pages=683-691&rft.issn=2644-1314&rft.eissn=2644-1314&rft.coden=IOJPA6&rft_id=info:doi/10.1109/OJPEL.2024.3400291&rft_dat=%3Cdoaj_ieee_%3Eoai_doaj_org_article_70ee468c75d042d1814d2fc5109ed0ae%3C/doaj_ieee_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=10530063&rft_doaj_id=oai_doaj_org_article_70ee468c75d042d1814d2fc5109ed0ae&rfr_iscdi=true |