Bidirectional 6-Bit Active Phase Shifter in W-Band
In this letter, a novel W-band switchless bidirectional active phase shifter with 6-bit resolution is proposed. The circuit is implemented in the SiGe:C BiCMOS technology using a Gilbert-cell core configured in a way to combine the reciprocity of passive phase shifters with the compactness of active...
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Veröffentlicht in: | IEEE solid-state circuits letters 2024, Vol.7, p.175-178 |
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creator | Smirnova, Kateryna Heijden, Mark van der Leenaerts, Domine Ulusoy, Ahmet Cagri |
description | In this letter, a novel W-band switchless bidirectional active phase shifter with 6-bit resolution is proposed. The circuit is implemented in the SiGe:C BiCMOS technology using a Gilbert-cell core configured in a way to combine the reciprocity of passive phase shifters with the compactness of active topologies. The circuit exhibits a maximum average gain of -7.4 and -8.2 dB in two directions while maintaining the RMS amplitude and phase error lower than 0.84 dB and 3.4° within 85- 100 GHz, respectively. The phase shifter uses 0.04 mm2 of the IC area and the DC power of 38 mW in each direction from a 2.4-V supply voltage, excluding the phase control circuitry. |
doi_str_mv | 10.1109/LSSC.2024.3398779 |
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The circuit is implemented in the SiGe:C BiCMOS technology using a Gilbert-cell core configured in a way to combine the reciprocity of passive phase shifters with the compactness of active topologies. The circuit exhibits a maximum average gain of -7.4 and -8.2 dB in two directions while maintaining the RMS amplitude and phase error lower than 0.84 dB and 3.4° within 85- 100 GHz, respectively. The phase shifter uses 0.04 mm2 of the IC area and the DC power of 38 mW in each direction from a 2.4-V supply voltage, excluding the phase control circuitry.</description><identifier>ISSN: 2573-9603</identifier><identifier>EISSN: 2573-9603</identifier><identifier>DOI: 10.1109/LSSC.2024.3398779</identifier><identifier>CODEN: ISCLCN</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Circuits ; Gain ; Millimeter wave phase shifters ; Phase control ; Phase error ; Phase measurement ; Phase shifters ; SiGe ; Silicon germanium ; Solid state circuits ; Topology ; W-band</subject><ispartof>IEEE solid-state circuits letters, 2024, Vol.7, p.175-178</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c246t-1b09bc22bd68eba218be34477e5ad8ba12b13ba9c0f46419fc42dadf19c63ae93</cites><orcidid>0000-0001-5718-2827 ; 0000-0002-1572-7208 ; 0000-0002-7575-5665</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10527352$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,778,782,794,4012,27910,27911,27912,54745</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10527352$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Smirnova, Kateryna</creatorcontrib><creatorcontrib>Heijden, Mark van der</creatorcontrib><creatorcontrib>Leenaerts, Domine</creatorcontrib><creatorcontrib>Ulusoy, Ahmet Cagri</creatorcontrib><title>Bidirectional 6-Bit Active Phase Shifter in W-Band</title><title>IEEE solid-state circuits letters</title><addtitle>LSSC</addtitle><description>In this letter, a novel W-band switchless bidirectional active phase shifter with 6-bit resolution is proposed. The circuit is implemented in the SiGe:C BiCMOS technology using a Gilbert-cell core configured in a way to combine the reciprocity of passive phase shifters with the compactness of active topologies. The circuit exhibits a maximum average gain of -7.4 and -8.2 dB in two directions while maintaining the RMS amplitude and phase error lower than 0.84 dB and 3.4° within 85- 100 GHz, respectively. The phase shifter uses 0.04 mm2 of the IC area and the DC power of 38 mW in each direction from a 2.4-V supply voltage, excluding the phase control circuitry.</description><subject>Circuits</subject><subject>Gain</subject><subject>Millimeter wave phase shifters</subject><subject>Phase control</subject><subject>Phase error</subject><subject>Phase measurement</subject><subject>Phase shifters</subject><subject>SiGe</subject><subject>Silicon germanium</subject><subject>Solid state circuits</subject><subject>Topology</subject><subject>W-band</subject><issn>2573-9603</issn><issn>2573-9603</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkE9LAzEQxYMoWGo_gOBhwfPWmSSb3Rzb4j9YUKjiMSTZWZpSuzXZCn57t7SHnmYG3nvM-zF2izBFBP1QL5eLKQcup0Loqiz1BRvxohS5ViAuz_ZrNklpDQCoUQmoRozPQxMi-T50W7vJVD4PfTYbzl_K3lc2UbZchbanmIVt9pXP7ba5YVet3SSanOaYfT49fixe8vrt-XUxq3PPpepzdKCd59w1qiJnOVaOhJRlSYVtKmeROxTOag-tVBJ16yVvbNOi9kpY0mLM7o-5u9j97Cn1Zt3t4_BlMgIUL0UFQ6Uxw6PKxy6lSK3ZxfBt459BMAc65kDHHOiYE53Bc3f0BCI60xdDaMHFP4prXqU</recordid><startdate>2024</startdate><enddate>2024</enddate><creator>Smirnova, Kateryna</creator><creator>Heijden, Mark van der</creator><creator>Leenaerts, Domine</creator><creator>Ulusoy, Ahmet Cagri</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5718-2827</orcidid><orcidid>https://orcid.org/0000-0002-1572-7208</orcidid><orcidid>https://orcid.org/0000-0002-7575-5665</orcidid></search><sort><creationdate>2024</creationdate><title>Bidirectional 6-Bit Active Phase Shifter in W-Band</title><author>Smirnova, Kateryna ; Heijden, Mark van der ; Leenaerts, Domine ; Ulusoy, Ahmet Cagri</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c246t-1b09bc22bd68eba218be34477e5ad8ba12b13ba9c0f46419fc42dadf19c63ae93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Circuits</topic><topic>Gain</topic><topic>Millimeter wave phase shifters</topic><topic>Phase control</topic><topic>Phase error</topic><topic>Phase measurement</topic><topic>Phase shifters</topic><topic>SiGe</topic><topic>Silicon germanium</topic><topic>Solid state circuits</topic><topic>Topology</topic><topic>W-band</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Smirnova, Kateryna</creatorcontrib><creatorcontrib>Heijden, Mark van der</creatorcontrib><creatorcontrib>Leenaerts, Domine</creatorcontrib><creatorcontrib>Ulusoy, Ahmet Cagri</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE solid-state circuits letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Smirnova, Kateryna</au><au>Heijden, Mark van der</au><au>Leenaerts, Domine</au><au>Ulusoy, Ahmet Cagri</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Bidirectional 6-Bit Active Phase Shifter in W-Band</atitle><jtitle>IEEE solid-state circuits letters</jtitle><stitle>LSSC</stitle><date>2024</date><risdate>2024</risdate><volume>7</volume><spage>175</spage><epage>178</epage><pages>175-178</pages><issn>2573-9603</issn><eissn>2573-9603</eissn><coden>ISCLCN</coden><abstract>In this letter, a novel W-band switchless bidirectional active phase shifter with 6-bit resolution is proposed. The circuit is implemented in the SiGe:C BiCMOS technology using a Gilbert-cell core configured in a way to combine the reciprocity of passive phase shifters with the compactness of active topologies. The circuit exhibits a maximum average gain of -7.4 and -8.2 dB in two directions while maintaining the RMS amplitude and phase error lower than 0.84 dB and 3.4° within 85- 100 GHz, respectively. The phase shifter uses 0.04 mm2 of the IC area and the DC power of 38 mW in each direction from a 2.4-V supply voltage, excluding the phase control circuitry.</abstract><cop>Piscataway</cop><pub>IEEE</pub><doi>10.1109/LSSC.2024.3398779</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-5718-2827</orcidid><orcidid>https://orcid.org/0000-0002-1572-7208</orcidid><orcidid>https://orcid.org/0000-0002-7575-5665</orcidid></addata></record> |
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subjects | Circuits Gain Millimeter wave phase shifters Phase control Phase error Phase measurement Phase shifters SiGe Silicon germanium Solid state circuits Topology W-band |
title | Bidirectional 6-Bit Active Phase Shifter in W-Band |
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