A Word-Organized Photodetector Array

A new word-organized photodetecting array is described, which is fast, sensitive, and easily integrated. The array consists of "digit" lines connecting common sides of p-i-n photodetecting diodes and "word" lines consisting of a series connection of p-i-n switching diodes. The wo...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of solid-state circuits 1969-12, Vol.4 (6), p.317-325
Hauptverfasser: Vilkomerson, D.H.R., Mezrich, R.S., Assour, J.M.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 325
container_issue 6
container_start_page 317
container_title IEEE journal of solid-state circuits
container_volume 4
creator Vilkomerson, D.H.R.
Mezrich, R.S.
Assour, J.M.
description A new word-organized photodetecting array is described, which is fast, sensitive, and easily integrated. The array consists of "digit" lines connecting common sides of p-i-n photodetecting diodes and "word" lines consisting of a series connection of p-i-n switching diodes. The word-organized character of the array results from the connection or disconnection of the photo-detecting diodes from ground by the forward- or reverse-biased state of the word line switching diodes. Photocurrent generated by light falling on a photodetector attached to a forward-biased word line will flow and be detected by a sense amplifier. Photocurrent in a photodetector attached to a reverse-biased word line can not be detected. An advantage of this array over existing arrays is that the photodetecting element, the p-i-n photodiode, is always back-biased; these diodes can be made with long carrier lifetimes to achieve a low dark current without slowing the switching time of the array. A complete analysis of the array operation is given, and in particular design criteria are found that relate the detector array discridmation ratio to the array size and signal rise time. The trade-offs between array simplicity and speed of operation are indicated, and it is demonstrated that the array is capable of submicrosecond cycle time. Fabrication procedures are discussed in detail and experimental results that justify the analysis are presented. Applications, such as in holographic computer memories, are briefly discussed.
doi_str_mv 10.1109/JSSC.1969.1050030
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_1050030</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1050030</ieee_id><sourcerecordid>28699537</sourcerecordid><originalsourceid>FETCH-LOGICAL-c294t-aa907b6614ccec31910fb679b9a8c9505024c2405e8cb52fbdb2d2067f0c19143</originalsourceid><addsrcrecordid>eNpNkE1Lw0AQhhdRsFZ_gHjpQbwlzmx2k91jCX5SqFBFb8tmM9FI26276aH-elPSg6fhZZ53GB7GLhFSRNC3z4tFmaLOdYogATI4YiOUUiVYZB_HbASAKtEc4JSdxfjdRyEUjtj1dPLuQ53Mw6ddt79UT16-fOdr6sh1PkymIdjdOTtp7DLSxWGO2dv93Wv5mMzmD0_ldJY4rkWXWKuhqPIchXPkMtQITZUXutJWOS37v7hwXIAk5SrJm6queM0hLxpwPSyyMbsZ7m6C_9lS7MyqjY6WS7smv42Gq1xrmRU9iAPogo8xUGM2oV3ZsDMIZu_D7H2YvQ9z8NF3roZOS0T_-GH7BwiFWkA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28699537</pqid></control><display><type>article</type><title>A Word-Organized Photodetector Array</title><source>IEEE Electronic Library (IEL)</source><creator>Vilkomerson, D.H.R. ; Mezrich, R.S. ; Assour, J.M.</creator><creatorcontrib>Vilkomerson, D.H.R. ; Mezrich, R.S. ; Assour, J.M.</creatorcontrib><description>A new word-organized photodetecting array is described, which is fast, sensitive, and easily integrated. The array consists of "digit" lines connecting common sides of p-i-n photodetecting diodes and "word" lines consisting of a series connection of p-i-n switching diodes. The word-organized character of the array results from the connection or disconnection of the photo-detecting diodes from ground by the forward- or reverse-biased state of the word line switching diodes. Photocurrent generated by light falling on a photodetector attached to a forward-biased word line will flow and be detected by a sense amplifier. Photocurrent in a photodetector attached to a reverse-biased word line can not be detected. An advantage of this array over existing arrays is that the photodetecting element, the p-i-n photodiode, is always back-biased; these diodes can be made with long carrier lifetimes to achieve a low dark current without slowing the switching time of the array. A complete analysis of the array operation is given, and in particular design criteria are found that relate the detector array discridmation ratio to the array size and signal rise time. The trade-offs between array simplicity and speed of operation are indicated, and it is demonstrated that the array is capable of submicrosecond cycle time. Fabrication procedures are discussed in detail and experimental results that justify the analysis are presented. Applications, such as in holographic computer memories, are briefly discussed.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.1969.1050030</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge carrier lifetime ; Dark current ; Joining processes ; P-i-n diodes ; Photoconductivity ; Photodetectors ; PIN photodiodes ; Sensor arrays ; Signal analysis ; Signal design</subject><ispartof>IEEE journal of solid-state circuits, 1969-12, Vol.4 (6), p.317-325</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c294t-aa907b6614ccec31910fb679b9a8c9505024c2405e8cb52fbdb2d2067f0c19143</citedby><cites>FETCH-LOGICAL-c294t-aa907b6614ccec31910fb679b9a8c9505024c2405e8cb52fbdb2d2067f0c19143</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1050030$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1050030$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Vilkomerson, D.H.R.</creatorcontrib><creatorcontrib>Mezrich, R.S.</creatorcontrib><creatorcontrib>Assour, J.M.</creatorcontrib><title>A Word-Organized Photodetector Array</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A new word-organized photodetecting array is described, which is fast, sensitive, and easily integrated. The array consists of "digit" lines connecting common sides of p-i-n photodetecting diodes and "word" lines consisting of a series connection of p-i-n switching diodes. The word-organized character of the array results from the connection or disconnection of the photo-detecting diodes from ground by the forward- or reverse-biased state of the word line switching diodes. Photocurrent generated by light falling on a photodetector attached to a forward-biased word line will flow and be detected by a sense amplifier. Photocurrent in a photodetector attached to a reverse-biased word line can not be detected. An advantage of this array over existing arrays is that the photodetecting element, the p-i-n photodiode, is always back-biased; these diodes can be made with long carrier lifetimes to achieve a low dark current without slowing the switching time of the array. A complete analysis of the array operation is given, and in particular design criteria are found that relate the detector array discridmation ratio to the array size and signal rise time. The trade-offs between array simplicity and speed of operation are indicated, and it is demonstrated that the array is capable of submicrosecond cycle time. Fabrication procedures are discussed in detail and experimental results that justify the analysis are presented. Applications, such as in holographic computer memories, are briefly discussed.</description><subject>Charge carrier lifetime</subject><subject>Dark current</subject><subject>Joining processes</subject><subject>P-i-n diodes</subject><subject>Photoconductivity</subject><subject>Photodetectors</subject><subject>PIN photodiodes</subject><subject>Sensor arrays</subject><subject>Signal analysis</subject><subject>Signal design</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1969</creationdate><recordtype>article</recordtype><recordid>eNpNkE1Lw0AQhhdRsFZ_gHjpQbwlzmx2k91jCX5SqFBFb8tmM9FI26276aH-elPSg6fhZZ53GB7GLhFSRNC3z4tFmaLOdYogATI4YiOUUiVYZB_HbASAKtEc4JSdxfjdRyEUjtj1dPLuQ53Mw6ddt79UT16-fOdr6sh1PkymIdjdOTtp7DLSxWGO2dv93Wv5mMzmD0_ldJY4rkWXWKuhqPIchXPkMtQITZUXutJWOS37v7hwXIAk5SrJm6queM0hLxpwPSyyMbsZ7m6C_9lS7MyqjY6WS7smv42Gq1xrmRU9iAPogo8xUGM2oV3ZsDMIZu_D7H2YvQ9z8NF3roZOS0T_-GH7BwiFWkA</recordid><startdate>19691201</startdate><enddate>19691201</enddate><creator>Vilkomerson, D.H.R.</creator><creator>Mezrich, R.S.</creator><creator>Assour, J.M.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19691201</creationdate><title>A Word-Organized Photodetector Array</title><author>Vilkomerson, D.H.R. ; Mezrich, R.S. ; Assour, J.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c294t-aa907b6614ccec31910fb679b9a8c9505024c2405e8cb52fbdb2d2067f0c19143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1969</creationdate><topic>Charge carrier lifetime</topic><topic>Dark current</topic><topic>Joining processes</topic><topic>P-i-n diodes</topic><topic>Photoconductivity</topic><topic>Photodetectors</topic><topic>PIN photodiodes</topic><topic>Sensor arrays</topic><topic>Signal analysis</topic><topic>Signal design</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vilkomerson, D.H.R.</creatorcontrib><creatorcontrib>Mezrich, R.S.</creatorcontrib><creatorcontrib>Assour, J.M.</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vilkomerson, D.H.R.</au><au>Mezrich, R.S.</au><au>Assour, J.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Word-Organized Photodetector Array</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1969-12-01</date><risdate>1969</risdate><volume>4</volume><issue>6</issue><spage>317</spage><epage>325</epage><pages>317-325</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A new word-organized photodetecting array is described, which is fast, sensitive, and easily integrated. The array consists of "digit" lines connecting common sides of p-i-n photodetecting diodes and "word" lines consisting of a series connection of p-i-n switching diodes. The word-organized character of the array results from the connection or disconnection of the photo-detecting diodes from ground by the forward- or reverse-biased state of the word line switching diodes. Photocurrent generated by light falling on a photodetector attached to a forward-biased word line will flow and be detected by a sense amplifier. Photocurrent in a photodetector attached to a reverse-biased word line can not be detected. An advantage of this array over existing arrays is that the photodetecting element, the p-i-n photodiode, is always back-biased; these diodes can be made with long carrier lifetimes to achieve a low dark current without slowing the switching time of the array. A complete analysis of the array operation is given, and in particular design criteria are found that relate the detector array discridmation ratio to the array size and signal rise time. The trade-offs between array simplicity and speed of operation are indicated, and it is demonstrated that the array is capable of submicrosecond cycle time. Fabrication procedures are discussed in detail and experimental results that justify the analysis are presented. Applications, such as in holographic computer memories, are briefly discussed.</abstract><pub>IEEE</pub><doi>10.1109/JSSC.1969.1050030</doi><tpages>9</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 0018-9200
ispartof IEEE journal of solid-state circuits, 1969-12, Vol.4 (6), p.317-325
issn 0018-9200
1558-173X
language eng
recordid cdi_ieee_primary_1050030
source IEEE Electronic Library (IEL)
subjects Charge carrier lifetime
Dark current
Joining processes
P-i-n diodes
Photoconductivity
Photodetectors
PIN photodiodes
Sensor arrays
Signal analysis
Signal design
title A Word-Organized Photodetector Array
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-18T15%3A14%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Word-Organized%20Photodetector%20Array&rft.jtitle=IEEE%20journal%20of%20solid-state%20circuits&rft.au=Vilkomerson,%20D.H.R.&rft.date=1969-12-01&rft.volume=4&rft.issue=6&rft.spage=317&rft.epage=325&rft.pages=317-325&rft.issn=0018-9200&rft.eissn=1558-173X&rft.coden=IJSCBC&rft_id=info:doi/10.1109/JSSC.1969.1050030&rft_dat=%3Cproquest_RIE%3E28699537%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28699537&rft_id=info:pmid/&rft_ieee_id=1050030&rfr_iscdi=true