An Analytical Approach for Evaluating Turn-On Switching Losses in SiC MOSFET With Kelvin Pin: Concept and Implementation

With the progressive adoption of silicon carbide (SiC) power devices in modern power converters, exploiting their superior efficiency, faster switching speed, and higher power density, an understanding of the factors influencing these properties becomes vital. One such critical factor is switching l...

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Veröffentlicht in:IEEE transactions on electron devices 2024-05, Vol.71 (5), p.3116-3122
Hauptverfasser: Mohammed Cherif, O., Nadji, B., Tadjer, S. A., Bencherif, H.
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container_issue 5
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container_title IEEE transactions on electron devices
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creator Mohammed Cherif, O.
Nadji, B.
Tadjer, S. A.
Bencherif, H.
description With the progressive adoption of silicon carbide (SiC) power devices in modern power converters, exploiting their superior efficiency, faster switching speed, and higher power density, an understanding of the factors influencing these properties becomes vital. One such critical factor is switching losses, which can drastically affect overall system performance. This study develops and presents a new analytical model for predicting the turn-on switching losses in SiC MOSFETs with Kelvin pin. The proposed model, derived from a carefully constructed set of nonlinear differential equations, accounts for the nonlinearity of the transconductance by incorporating a novel transfer characteristic model. The model also incorporates the nonlinear junction capacitances effects. The developed analytical model allows for the prediction and optimization of turn-on switching losses in SiC MOSFETs, thus enabling improved energy efficiency and reliability. The accuracy of the proposed model is verified through comparison with experimental results obtained using the double pulse test board that was designed and constructed, demonstrating its applicability for the investigation of SiC MOSFET power losses.
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subjects Analytical models
Capacitance
Double pulse test
Integrated circuit modeling
Mathematical analysis
Mathematical models
modeling
MOSFET
MOSFETs
Nonlinear differential equations
Nonlinearity
Power converters
Power management
Semiconductor device modeling
Silicon carbide
silicon carbide (SiC) MOSFET
Switching
switching losses
Transconductance
title An Analytical Approach for Evaluating Turn-On Switching Losses in SiC MOSFET With Kelvin Pin: Concept and Implementation
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