GaN power switching device growth by plasma assisted molecular beam epitaxy

Newly fabricated junction field effect transistors (JFETs) and high electron mobility transistors (HEMTs) based on gallium nitride (GaN) substrates are presented. The devices, grown with plasma assisted molecular beam epitaxy (PAMBE), are to be used for power switching applications. Very high qualit...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Park, C., Chapman, P.L., Rhee, S.H., Hong, S.J., Zhang, X., Krein, P.T., Kim, K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	FETs Gallium nitride HEMTs III-V semiconductor materials JFETs MODFETs Molecular beam epitaxial growth Plasma applications Plasma devices Substrates
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