GaN power switching device growth by plasma assisted molecular beam epitaxy
Newly fabricated junction field effect transistors (JFETs) and high electron mobility transistors (HEMTs) based on gallium nitride (GaN) substrates are presented. The devices, grown with plasma assisted molecular beam epitaxy (PAMBE), are to be used for power switching applications. Very high qualit...
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| creator | Park, C. Chapman, P.L. Rhee, S.H. Hong, S.J. Zhang, X. Krein, P.T. Kim, K. |
| description | Newly fabricated junction field effect transistors (JFETs) and high electron mobility transistors (HEMTs) based on gallium nitride (GaN) substrates are presented. The devices, grown with plasma assisted molecular beam epitaxy (PAMBE), are to be used for power switching applications. Very high quality p- and n-type films were grown. Some test results are shown for surface smoothness and for successfully processed Schottky diodes. |
| doi_str_mv | 10.1109/IAS.2002.1044143 |
| format | Conference Proceeding |
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The devices, grown with plasma assisted molecular beam epitaxy (PAMBE), are to be used for power switching applications. Very high quality p- and n-type films were grown. Some test results are shown for surface smoothness and for successfully processed Schottky diodes.</description><identifier>ISSN: 0197-2618</identifier><identifier>ISBN: 0780374207</identifier><identifier>ISBN: 9780780374201</identifier><identifier>EISSN: 2576-702X</identifier><identifier>DOI: 10.1109/IAS.2002.1044143</identifier><language>eng</language><publisher>IEEE</publisher><subject>FETs ; Gallium nitride ; HEMTs ; III-V semiconductor materials ; JFETs ; MODFETs ; Molecular beam epitaxial growth ; Plasma applications ; Plasma devices ; Substrates</subject><ispartof>Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. 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Some test results are shown for surface smoothness and for successfully processed Schottky diodes.</description><subject>FETs</subject><subject>Gallium nitride</subject><subject>HEMTs</subject><subject>III-V semiconductor materials</subject><subject>JFETs</subject><subject>MODFETs</subject><subject>Molecular beam epitaxial growth</subject><subject>Plasma applications</subject><subject>Plasma devices</subject><subject>Substrates</subject><issn>0197-2618</issn><issn>2576-702X</issn><isbn>0780374207</isbn><isbn>9780780374201</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMtOwzAURC0eEqV0j8TGP5Bw7ThxsqwqKBUVLACJXXUdX7dGCYniQJq_JxKdzeyO5gxjtwJiIaC43yzfYgkgYwFKCZWcsZlMdRZpkJ_n7Bp0DolWEvQFm4EodCQzkV-xRQhfMEWlCpScsec1vvC2GajjYfB9efDfe27p15fE910z9AduRt5WGGrkGIIPPVleNxWVPxV23BDWnFrf43G8YZcOq0CLU8_Zx-PD--op2r6uN6vlNvJCJ31kslQ4UlZawKww07YSs8nBWevQZsZiLqEoEyetU6nTEowzGoygHLUqbTJnd_9cT0S7tvM1duPu9EPyB-IIUJE</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Park, C.</creator><creator>Chapman, P.L.</creator><creator>Rhee, S.H.</creator><creator>Hong, S.J.</creator><creator>Zhang, X.</creator><creator>Krein, P.T.</creator><creator>Kim, K.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2002</creationdate><title>GaN power switching device growth by plasma assisted molecular beam epitaxy</title><author>Park, C. ; Chapman, P.L. ; Rhee, S.H. ; Hong, S.J. ; Zhang, X. ; Krein, P.T. ; Kim, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i173t-b651fe4d2d0a69b197ca6441fddfad6bda8209c3f2df45f720bfb70b1e8a74cd3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>FETs</topic><topic>Gallium nitride</topic><topic>HEMTs</topic><topic>III-V semiconductor materials</topic><topic>JFETs</topic><topic>MODFETs</topic><topic>Molecular beam epitaxial growth</topic><topic>Plasma applications</topic><topic>Plasma devices</topic><topic>Substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Park, C.</creatorcontrib><creatorcontrib>Chapman, P.L.</creatorcontrib><creatorcontrib>Rhee, S.H.</creatorcontrib><creatorcontrib>Hong, S.J.</creatorcontrib><creatorcontrib>Zhang, X.</creatorcontrib><creatorcontrib>Krein, P.T.</creatorcontrib><creatorcontrib>Kim, K.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Park, C.</au><au>Chapman, P.L.</au><au>Rhee, S.H.</au><au>Hong, S.J.</au><au>Zhang, X.</au><au>Krein, P.T.</au><au>Kim, K.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>GaN power switching device growth by plasma assisted molecular beam epitaxy</atitle><btitle>Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344)</btitle><stitle>IAS</stitle><date>2002</date><risdate>2002</risdate><volume>1</volume><spage>576</spage><epage>579 vol.1</epage><pages>576-579 vol.1</pages><issn>0197-2618</issn><eissn>2576-702X</eissn><isbn>0780374207</isbn><isbn>9780780374201</isbn><abstract>Newly fabricated junction field effect transistors (JFETs) and high electron mobility transistors (HEMTs) based on gallium nitride (GaN) substrates are presented. The devices, grown with plasma assisted molecular beam epitaxy (PAMBE), are to be used for power switching applications. Very high quality p- and n-type films were grown. Some test results are shown for surface smoothness and for successfully processed Schottky diodes.</abstract><pub>IEEE</pub><doi>10.1109/IAS.2002.1044143</doi></addata></record> |
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| identifier | ISSN: 0197-2618 |
| ispartof | Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344), 2002, Vol.1, p.576-579 vol.1 |
| issn | 0197-2618 2576-702X |
| language | eng |
| recordid | cdi_ieee_primary_1044143 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | FETs Gallium nitride HEMTs III-V semiconductor materials JFETs MODFETs Molecular beam epitaxial growth Plasma applications Plasma devices Substrates |
| title | GaN power switching device growth by plasma assisted molecular beam epitaxy |
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