Impedance Spectroscopy Modeling of Solution-Processed Amorphous Indium-Gallium-Zinc-Oxide Metal-Semiconductor-Metal Diode
In this study, we analyze the impedance spectroscopic characteristics of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) metal-semiconductor-metal diodes adopting aluminum and heavily doped Si electrodes. The Cole-Cole plots extracted from the capacitance-voltage ( {C} - {V} ) measur...
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| Veröffentlicht in: | IEEE transactions on electron devices 2024-03, Vol.71 (3), p.1940-1945 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 71 |
| creator | Ahn, Jaehyun Jeong, Jaewook |
| description | In this study, we analyze the impedance spectroscopic characteristics of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) metal-semiconductor-metal diodes adopting aluminum and heavily doped Si electrodes. The Cole-Cole plots extracted from the capacitance-voltage ( {C} - {V} ) measurements exhibited variations depending on the voltage bias polarity and were simplified using two types of equivalent circuits. These circuits include the effects of oxidation near the aluminum electrode, tunneling at the metal/a-IGZO layer interface from the tunneling diode model, and the presence of native oxide. The thickness dependence of the {C} - {V} measurements indicates that oxidation of the Al electrodes and the quantum mechanical distribution of the electron density dominantly affected the {C} - {V} results at the Al/IGZO interface. |
| doi_str_mv | 10.1109/TED.2024.3358270 |
| format | Article |
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The Cole-Cole plots extracted from the capacitance-voltage (<inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula>) measurements exhibited variations depending on the voltage bias polarity and were simplified using two types of equivalent circuits. These circuits include the effects of oxidation near the aluminum electrode, tunneling at the metal/a-IGZO layer interface from the tunneling diode model, and the presence of native oxide. The thickness dependence of the <inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> measurements indicates that oxidation of the Al electrodes and the quantum mechanical distribution of the electron density dominantly affected the <inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> results at the Al/IGZO interface.]]></description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2024.3358270</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum ; Amorphous indium-gallium-zinc-oxide (a-IGZO) layer ; capacitance-voltage (C–V) measurement ; Electric potential ; Electrodes ; Electron density ; Equivalent circuits ; Gallium ; Impedance ; impedance spectroscopy ; Indium ; Indium gallium zinc oxide ; MSM structure ; Oxidation ; Quantum mechanics ; Schottky diodes ; Semiconductor device measurement ; Silicon ; Tunnel diodes ; Tunneling ; tunneling diode ; Voltage ; Zinc</subject><ispartof>IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1940-1945</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c245t-2fda289026ee27b850475d9484ff20912c2a27f089aa50423e1833f947916eca3</cites><orcidid>0009-0007-6812-3698 ; 0000-0002-3180-2167</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10423609$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10423609$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ahn, Jaehyun</creatorcontrib><creatorcontrib>Jeong, Jaewook</creatorcontrib><title>Impedance Spectroscopy Modeling of Solution-Processed Amorphous Indium-Gallium-Zinc-Oxide Metal-Semiconductor-Metal Diode</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description><![CDATA[In this study, we analyze the impedance spectroscopic characteristics of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) metal-semiconductor-metal diodes adopting aluminum and heavily doped Si electrodes. The Cole-Cole plots extracted from the capacitance-voltage (<inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula>) measurements exhibited variations depending on the voltage bias polarity and were simplified using two types of equivalent circuits. These circuits include the effects of oxidation near the aluminum electrode, tunneling at the metal/a-IGZO layer interface from the tunneling diode model, and the presence of native oxide. The thickness dependence of the <inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> measurements indicates that oxidation of the Al electrodes and the quantum mechanical distribution of the electron density dominantly affected the <inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> results at the Al/IGZO interface.]]></description><subject>Aluminum</subject><subject>Amorphous indium-gallium-zinc-oxide (a-IGZO) layer</subject><subject>capacitance-voltage (C–V) measurement</subject><subject>Electric potential</subject><subject>Electrodes</subject><subject>Electron density</subject><subject>Equivalent circuits</subject><subject>Gallium</subject><subject>Impedance</subject><subject>impedance spectroscopy</subject><subject>Indium</subject><subject>Indium gallium zinc oxide</subject><subject>MSM structure</subject><subject>Oxidation</subject><subject>Quantum mechanics</subject><subject>Schottky diodes</subject><subject>Semiconductor device measurement</subject><subject>Silicon</subject><subject>Tunnel diodes</subject><subject>Tunneling</subject><subject>tunneling diode</subject><subject>Voltage</subject><subject>Zinc</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkL1PwzAQxS0EEqWwMzBEYnbxVxJ7rAqUSq2K1LKwRMa5gKskDnYi0f8el3ZgOt3de-9OP4RuKZlQStTD9ulxwggTE85TyXJyhkY0TXOsMpGdoxEhVGLFJb9EVyHsYpsJwUZov2g6KHVrINl0YHrvgnHdPlm5EmrbfiauSjauHnrrWvzqnYEQoEymjfPdlxtCsmhLOzR4ruv6UN9ta_D6x5aQrKDXNd5AY41ry8H0zuO_WfJoY_o1uqh0HeDmVMfo7flpO3vBy_V8MZsusWEi7TGrSs2kIiwDYPmHTInI01IJKaqKEUWZYZrlFZFK67hjHKjkvFIiVzQDo_kY3R9zO---Bwh9sXODb-PJginOM0ooyaKKHFUmEggeqqLzttF-X1BSHAAXEXBxAFycAEfL3dFiAeCfPP6QEcV_Ae8od5s</recordid><startdate>20240301</startdate><enddate>20240301</enddate><creator>Ahn, Jaehyun</creator><creator>Jeong, Jaewook</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0009-0007-6812-3698</orcidid><orcidid>https://orcid.org/0000-0002-3180-2167</orcidid></search><sort><creationdate>20240301</creationdate><title>Impedance Spectroscopy Modeling of Solution-Processed Amorphous Indium-Gallium-Zinc-Oxide Metal-Semiconductor-Metal Diode</title><author>Ahn, Jaehyun ; Jeong, Jaewook</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c245t-2fda289026ee27b850475d9484ff20912c2a27f089aa50423e1833f947916eca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Aluminum</topic><topic>Amorphous indium-gallium-zinc-oxide (a-IGZO) layer</topic><topic>capacitance-voltage (C–V) measurement</topic><topic>Electric potential</topic><topic>Electrodes</topic><topic>Electron density</topic><topic>Equivalent circuits</topic><topic>Gallium</topic><topic>Impedance</topic><topic>impedance spectroscopy</topic><topic>Indium</topic><topic>Indium gallium zinc oxide</topic><topic>MSM structure</topic><topic>Oxidation</topic><topic>Quantum mechanics</topic><topic>Schottky diodes</topic><topic>Semiconductor device measurement</topic><topic>Silicon</topic><topic>Tunnel diodes</topic><topic>Tunneling</topic><topic>tunneling diode</topic><topic>Voltage</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ahn, Jaehyun</creatorcontrib><creatorcontrib>Jeong, Jaewook</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998–Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ahn, Jaehyun</au><au>Jeong, Jaewook</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Impedance Spectroscopy Modeling of Solution-Processed Amorphous Indium-Gallium-Zinc-Oxide Metal-Semiconductor-Metal Diode</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2024-03-01</date><risdate>2024</risdate><volume>71</volume><issue>3</issue><spage>1940</spage><epage>1945</epage><pages>1940-1945</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract><![CDATA[In this study, we analyze the impedance spectroscopic characteristics of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) metal-semiconductor-metal diodes adopting aluminum and heavily doped Si electrodes. The Cole-Cole plots extracted from the capacitance-voltage (<inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula>) measurements exhibited variations depending on the voltage bias polarity and were simplified using two types of equivalent circuits. These circuits include the effects of oxidation near the aluminum electrode, tunneling at the metal/a-IGZO layer interface from the tunneling diode model, and the presence of native oxide. The thickness dependence of the <inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> measurements indicates that oxidation of the Al electrodes and the quantum mechanical distribution of the electron density dominantly affected the <inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> results at the Al/IGZO interface.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2024.3358270</doi><tpages>6</tpages><orcidid>https://orcid.org/0009-0007-6812-3698</orcidid><orcidid>https://orcid.org/0000-0002-3180-2167</orcidid></addata></record> |
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| subjects | Aluminum Amorphous indium-gallium-zinc-oxide (a-IGZO) layer capacitance-voltage (C–V) measurement Electric potential Electrodes Electron density Equivalent circuits Gallium Impedance impedance spectroscopy Indium Indium gallium zinc oxide MSM structure Oxidation Quantum mechanics Schottky diodes Semiconductor device measurement Silicon Tunnel diodes Tunneling tunneling diode Voltage Zinc |
| title | Impedance Spectroscopy Modeling of Solution-Processed Amorphous Indium-Gallium-Zinc-Oxide Metal-Semiconductor-Metal Diode |
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