Modeling Methodology for Thermal Stability Factor in Spin Transfer Torque Magneto-Resistive Random Access Memories
This article presents systematic pathways to model the thermal stability factor for magneto-resistive random access memories using atomistic simulations. The model involves constraint Monte Carlo solver to estimate the change in anisotropy energy as a function of the angle of magnetization from the...
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| Veröffentlicht in: | IEEE transactions on electron devices 2024-03, Vol.71 (3), p.1886-1892 |
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| container_issue | 3 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 71 |
| creator | Talapatra, Abhishek Weisheit, Martin Muller, Johannes Mansueto, Marco Hazen, Daniel Sanchez Komma, Venkata Siva Zaka, Alban |
| description | This article presents systematic pathways to model the thermal stability factor for magneto-resistive random access memories using atomistic simulations. The model involves constraint Monte Carlo solver to estimate the change in anisotropy energy as a function of the angle of magnetization from the easy axis at real temperatures. The reported modeling methodology has been validated against the hardware (HW) data of GlobalFoundries on the 22FDX technology node. We have clearly explained the routes for proper estimation of the input parameters along with the identification of important tuning parameters in the model. The model is based on a single effective free layer approximation of the magnetic tunnel junction (MTJ) and captures the variations of the thermal stability factor with the variations in free layer thickness, the diameter of the MTJ pillars, and the processing routes. |
| doi_str_mv | 10.1109/TED.2024.3354695 |
| format | Article |
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The model involves constraint Monte Carlo solver to estimate the change in anisotropy energy as a function of the angle of magnetization from the easy axis at real temperatures. The reported modeling methodology has been validated against the hardware (HW) data of GlobalFoundries on the 22FDX technology node. We have clearly explained the routes for proper estimation of the input parameters along with the identification of important tuning parameters in the model. 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| source | IEEE Electronic Library (IEL) |
| subjects | Anisotropy Atomistic simulations Constraint modelling Curie temperature data retention Diameters embedded nonvolatile memories (eNVM) Magnetic anisotropy Magnetic tunneling Magnetization Parameter identification Perpendicular magnetic anisotropy Random access memory Semiconductor device modeling spin-transfer-torque magneto-resistive random access memories (STT-MRAM) Stability analysis Thermal stability thermal stability factor Thickness Tunnel junctions |
| title | Modeling Methodology for Thermal Stability Factor in Spin Transfer Torque Magneto-Resistive Random Access Memories |
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