Picosecond carrier dynamics in a-Si/sub 0.5/Ge/sub 0.5/:H measured with a free-electron laser
A picosecond time-resolved pump and probe experiment has been performed on a thin a-Si/sub 0.5/Ge/sub 0.5/:H film using the short optical pulses generated by the superconducting accelerator-pumped free-electron laser (FEL) at Stanford University. The FEL was tuned at 1.5 mu m. The probe beam was at...
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| Veröffentlicht in: | IEEE journal of quantum electronics 1991-12, Vol.27 (12), p.2714-2717 |
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| container_issue | 12 |
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| container_title | IEEE journal of quantum electronics |
| container_volume | 27 |
| creator | Fauchet, P.M. Young, D.A. Nighan, W.L. Fortmann, C.M. |
| description | A picosecond time-resolved pump and probe experiment has been performed on a thin a-Si/sub 0.5/Ge/sub 0.5/:H film using the short optical pulses generated by the superconducting accelerator-pumped free-electron laser (FEL) at Stanford University. The FEL was tuned at 1.5 mu m. The probe beam was at the fundamental wavelength, and the pump beam was obtained after frequency doubling. The authors found that the transmission decreases due to photogeneration of carriers and then recovers on a 6 ps time scale. This recovery is the signature of ultrafast carrier recombination. It is faster than in a-Si:H for similar conditions. A possible origin of the difference is discussed.< > |
| doi_str_mv | 10.1109/3.104152 |
| format | Article |
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The FEL was tuned at 1.5 mu m. The probe beam was at the fundamental wavelength, and the pump beam was obtained after frequency doubling. The authors found that the transmission decreases due to photogeneration of carriers and then recovers on a 6 ps time scale. This recovery is the signature of ultrafast carrier recombination. It is faster than in a-Si:H for similar conditions. A possible origin of the difference is discussed.< ></description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/3.104152</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>IEEE</publisher><subject>Acceleration ; Free electron lasers ; Laser beams ; Laser excitation ; Laser tuning ; Optical films ; Optical pulse generation ; Optical pulses ; Probes ; Superconducting films</subject><ispartof>IEEE journal of quantum electronics, 1991-12, Vol.27 (12), p.2714-2717</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c912-76445a39984c98d6768baf2c9d3f28deb633323257c5f4b5e3159a62cff05d043</citedby><cites>FETCH-LOGICAL-c912-76445a39984c98d6768baf2c9d3f28deb633323257c5f4b5e3159a62cff05d043</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/104152$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/104152$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Fauchet, P.M.</creatorcontrib><creatorcontrib>Young, D.A.</creatorcontrib><creatorcontrib>Nighan, W.L.</creatorcontrib><creatorcontrib>Fortmann, C.M.</creatorcontrib><title>Picosecond carrier dynamics in a-Si/sub 0.5/Ge/sub 0.5/:H measured with a free-electron laser</title><title>IEEE journal of quantum electronics</title><addtitle>JQE</addtitle><description>A picosecond time-resolved pump and probe experiment has been performed on a thin a-Si/sub 0.5/Ge/sub 0.5/:H film using the short optical pulses generated by the superconducting accelerator-pumped free-electron laser (FEL) at Stanford University. The FEL was tuned at 1.5 mu m. The probe beam was at the fundamental wavelength, and the pump beam was obtained after frequency doubling. The authors found that the transmission decreases due to photogeneration of carriers and then recovers on a 6 ps time scale. This recovery is the signature of ultrafast carrier recombination. It is faster than in a-Si:H for similar conditions. A possible origin of the difference is discussed.< ></description><subject>Acceleration</subject><subject>Free electron lasers</subject><subject>Laser beams</subject><subject>Laser excitation</subject><subject>Laser tuning</subject><subject>Optical films</subject><subject>Optical pulse generation</subject><subject>Optical pulses</subject><subject>Probes</subject><subject>Superconducting films</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><recordid>eNpNkE1LAzEYhIMoWKvg2VOOXtLmzcdu4k2KbYWCgr3Kkk3eYKTdlaRF-u-troinmWEe5jCEXAOfAHA7lRPgCrQ4ISPQ2jCoQZ6SEedgmAVbn5OLUt6PUSnDR-T1Ofm-oO-7QL3LOWGm4dC5bfKFpo469pKmZd9SPtHTBf7ZuyXdoiv7jIF-pt0bdTRmRIYb9Lvcd3TjCuZLchbdpuDVr47Jev6wni3Z6mnxOLtfMW9BsLpSSjtprVHemlDVlWldFN4GGYUJ2FZSSiGFrr2OqtUoQVtXCR8j14ErOSa3w6zPfSkZY_OR09blQwO8-X6lkc3wyhG9GdCEiP-wn_ILY5NaMA</recordid><startdate>199112</startdate><enddate>199112</enddate><creator>Fauchet, P.M.</creator><creator>Young, D.A.</creator><creator>Nighan, W.L.</creator><creator>Fortmann, C.M.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>199112</creationdate><title>Picosecond carrier dynamics in a-Si/sub 0.5/Ge/sub 0.5/:H measured with a free-electron laser</title><author>Fauchet, P.M. ; Young, D.A. ; Nighan, W.L. ; Fortmann, C.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c912-76445a39984c98d6768baf2c9d3f28deb633323257c5f4b5e3159a62cff05d043</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Acceleration</topic><topic>Free electron lasers</topic><topic>Laser beams</topic><topic>Laser excitation</topic><topic>Laser tuning</topic><topic>Optical films</topic><topic>Optical pulse generation</topic><topic>Optical pulses</topic><topic>Probes</topic><topic>Superconducting films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fauchet, P.M.</creatorcontrib><creatorcontrib>Young, D.A.</creatorcontrib><creatorcontrib>Nighan, W.L.</creatorcontrib><creatorcontrib>Fortmann, C.M.</creatorcontrib><collection>CrossRef</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fauchet, P.M.</au><au>Young, D.A.</au><au>Nighan, W.L.</au><au>Fortmann, C.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Picosecond carrier dynamics in a-Si/sub 0.5/Ge/sub 0.5/:H measured with a free-electron laser</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>1991-12</date><risdate>1991</risdate><volume>27</volume><issue>12</issue><spage>2714</spage><epage>2717</epage><pages>2714-2717</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>A picosecond time-resolved pump and probe experiment has been performed on a thin a-Si/sub 0.5/Ge/sub 0.5/:H film using the short optical pulses generated by the superconducting accelerator-pumped free-electron laser (FEL) at Stanford University. The FEL was tuned at 1.5 mu m. The probe beam was at the fundamental wavelength, and the pump beam was obtained after frequency doubling. The authors found that the transmission decreases due to photogeneration of carriers and then recovers on a 6 ps time scale. This recovery is the signature of ultrafast carrier recombination. It is faster than in a-Si:H for similar conditions. A possible origin of the difference is discussed.< ></abstract><pub>IEEE</pub><doi>10.1109/3.104152</doi><tpages>4</tpages></addata></record> |
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| ispartof | IEEE journal of quantum electronics, 1991-12, Vol.27 (12), p.2714-2717 |
| issn | 0018-9197 1558-1713 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Acceleration Free electron lasers Laser beams Laser excitation Laser tuning Optical films Optical pulse generation Optical pulses Probes Superconducting films |
| title | Picosecond carrier dynamics in a-Si/sub 0.5/Ge/sub 0.5/:H measured with a free-electron laser |
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