Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers

This study aims to improve the characteristics of AlGaInP-based micro light-emitting diodes (micro-LEDs) by utilizing three different passivation layers, including silicon dioxide (SiO2), distributed Bragg reflector (DBR), and aluminum oxide (Al2O3) grown by atomic layer deposition (ALD) in combinat...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2024-03, Vol.71 (3), p.2253-2256
Hauptverfasser:	Wang, Zhen-Jin, Ye, Xin-Liang, Tu, Wei-Chen, Yang, Chih-Chiang, Su, Yan-Kuin
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaInP Aluminum gallium indium phosphides Aluminum oxide atomic layer deposition (ALD) Atomic layer epitaxy Bragg reflectors Current density distributed Bragg reflector (DBR) Distributed Bragg reflectors Electrical engineering forward voltage Leakage currents Light emitting diodes micro light-emitting diode (micro-LEDs) Passivation passivation layer Passivity Quantum efficiency Reflection Refractivity sidewall treatment Silicon dioxide
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!