Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers
This study aims to improve the characteristics of AlGaInP-based micro light-emitting diodes (micro-LEDs) by utilizing three different passivation layers, including silicon dioxide (SiO2), distributed Bragg reflector (DBR), and aluminum oxide (Al2O3) grown by atomic layer deposition (ALD) in combinat...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on electron devices 2024-03, Vol.71 (3), p.2253-2256 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 2256 |
|---|---|
| container_issue | 3 |
| container_start_page | 2253 |
| container_title | IEEE transactions on electron devices |
| container_volume | 71 |
| creator | Wang, Zhen-Jin Ye, Xin-Liang Tu, Wei-Chen Yang, Chih-Chiang Su, Yan-Kuin |
| description | This study aims to improve the characteristics of AlGaInP-based micro light-emitting diodes (micro-LEDs) by utilizing three different passivation layers, including silicon dioxide (SiO2), distributed Bragg reflector (DBR), and aluminum oxide (Al2O3) grown by atomic layer deposition (ALD) in combination with DBR. In terms of transmittance and refractive indices, our proposed structure, constructed with ALD-grown Al2O3 and a nine-layered DBR, exhibits significant improvements in all aspects compared to the traditional structure with a 3000Å SiO2 passivation layer. Additionally, the structure demonstrates a 124.28% increase in external quantum efficiency (EQE) compared to the LED constructed with a nine-layered DBR. This result indicates that the ALD growth of Al2O3 effectively reduces sidewall losses, significantly impacting the improvement of micro-LEDs. |
| doi_str_mv | 10.1109/TED.2024.3351595 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_10411849</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10411849</ieee_id><sourcerecordid>2933610188</sourcerecordid><originalsourceid>FETCH-LOGICAL-c292t-f15147bc0414735243394270368912c25a0fb1b98f3fa16ab5fe37dc23bdfc523</originalsourceid><addsrcrecordid>eNpNkM1PAjEUxBujiYjePXho4nmxrx-72yPhS5I1cgCvTbe0WgK72C4k_PeWwMHT5CUz8zI_hJ6BDACIfFtOxgNKKB8wJkBIcYN6IESRyZznt6hHCJSZZCW7Rw8xbtKZc057aDXf7UN79M03Hm5net4s8Ic3oc2qyTji0Y8O2nQ2-Nh5E_HRa_ylg7drPPZ2a00XvMELHaM_6s63Da70yYb4iO6c3kb7dNU-Wk0ny9F7Vn3O5qNhlRkqaZc5EMCL2hCehAnKGZOcFoTlpQRqqNDE1VDL0jGnIde1cJYVa0NZvXZGUNZHr5fetOH3YGOnNu0hNOmlopKxHNLqMrnIxZV2xRisU_vgdzqcFBB1hqcSPHWGp67wUuTlEvHW2n92DlByyf4ACcpptA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2933610188</pqid></control><display><type>article</type><title>Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers</title><source>IEEE Electronic Library (IEL)</source><creator>Wang, Zhen-Jin ; Ye, Xin-Liang ; Tu, Wei-Chen ; Yang, Chih-Chiang ; Su, Yan-Kuin</creator><creatorcontrib>Wang, Zhen-Jin ; Ye, Xin-Liang ; Tu, Wei-Chen ; Yang, Chih-Chiang ; Su, Yan-Kuin</creatorcontrib><description>This study aims to improve the characteristics of AlGaInP-based micro light-emitting diodes (micro-LEDs) by utilizing three different passivation layers, including silicon dioxide (SiO2), distributed Bragg reflector (DBR), and aluminum oxide (Al2O3) grown by atomic layer deposition (ALD) in combination with DBR. In terms of transmittance and refractive indices, our proposed structure, constructed with ALD-grown Al2O3 and a nine-layered DBR, exhibits significant improvements in all aspects compared to the traditional structure with a 3000Å SiO2 passivation layer. Additionally, the structure demonstrates a 124.28% increase in external quantum efficiency (EQE) compared to the LED constructed with a nine-layered DBR. This result indicates that the ALD growth of Al2O3 effectively reduces sidewall losses, significantly impacting the improvement of micro-LEDs.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2024.3351595</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>AlGaInP ; Aluminum gallium indium phosphides ; Aluminum oxide ; atomic layer deposition (ALD) ; Atomic layer epitaxy ; Bragg reflectors ; Current density ; distributed Bragg reflector (DBR) ; Distributed Bragg reflectors ; Electrical engineering ; forward voltage ; Leakage currents ; Light emitting diodes ; micro light-emitting diode (micro-LEDs) ; Passivation ; passivation layer ; Passivity ; Quantum efficiency ; Reflection ; Refractivity ; sidewall treatment ; Silicon dioxide</subject><ispartof>IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.2253-2256</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c292t-f15147bc0414735243394270368912c25a0fb1b98f3fa16ab5fe37dc23bdfc523</citedby><cites>FETCH-LOGICAL-c292t-f15147bc0414735243394270368912c25a0fb1b98f3fa16ab5fe37dc23bdfc523</cites><orcidid>0000-0003-1134-5859 ; 0000-0002-8716-8521 ; 0000-0001-9581-8486 ; 0000-0002-7250-0501</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10411849$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10411849$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wang, Zhen-Jin</creatorcontrib><creatorcontrib>Ye, Xin-Liang</creatorcontrib><creatorcontrib>Tu, Wei-Chen</creatorcontrib><creatorcontrib>Yang, Chih-Chiang</creatorcontrib><creatorcontrib>Su, Yan-Kuin</creatorcontrib><title>Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>This study aims to improve the characteristics of AlGaInP-based micro light-emitting diodes (micro-LEDs) by utilizing three different passivation layers, including silicon dioxide (SiO2), distributed Bragg reflector (DBR), and aluminum oxide (Al2O3) grown by atomic layer deposition (ALD) in combination with DBR. In terms of transmittance and refractive indices, our proposed structure, constructed with ALD-grown Al2O3 and a nine-layered DBR, exhibits significant improvements in all aspects compared to the traditional structure with a 3000Å SiO2 passivation layer. Additionally, the structure demonstrates a 124.28% increase in external quantum efficiency (EQE) compared to the LED constructed with a nine-layered DBR. This result indicates that the ALD growth of Al2O3 effectively reduces sidewall losses, significantly impacting the improvement of micro-LEDs.</description><subject>AlGaInP</subject><subject>Aluminum gallium indium phosphides</subject><subject>Aluminum oxide</subject><subject>atomic layer deposition (ALD)</subject><subject>Atomic layer epitaxy</subject><subject>Bragg reflectors</subject><subject>Current density</subject><subject>distributed Bragg reflector (DBR)</subject><subject>Distributed Bragg reflectors</subject><subject>Electrical engineering</subject><subject>forward voltage</subject><subject>Leakage currents</subject><subject>Light emitting diodes</subject><subject>micro light-emitting diode (micro-LEDs)</subject><subject>Passivation</subject><subject>passivation layer</subject><subject>Passivity</subject><subject>Quantum efficiency</subject><subject>Reflection</subject><subject>Refractivity</subject><subject>sidewall treatment</subject><subject>Silicon dioxide</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkM1PAjEUxBujiYjePXho4nmxrx-72yPhS5I1cgCvTbe0WgK72C4k_PeWwMHT5CUz8zI_hJ6BDACIfFtOxgNKKB8wJkBIcYN6IESRyZznt6hHCJSZZCW7Rw8xbtKZc057aDXf7UN79M03Hm5net4s8Ic3oc2qyTji0Y8O2nQ2-Nh5E_HRa_ylg7drPPZ2a00XvMELHaM_6s63Da70yYb4iO6c3kb7dNU-Wk0ny9F7Vn3O5qNhlRkqaZc5EMCL2hCehAnKGZOcFoTlpQRqqNDE1VDL0jGnIde1cJYVa0NZvXZGUNZHr5fetOH3YGOnNu0hNOmlopKxHNLqMrnIxZV2xRisU_vgdzqcFBB1hqcSPHWGp67wUuTlEvHW2n92DlByyf4ACcpptA</recordid><startdate>20240301</startdate><enddate>20240301</enddate><creator>Wang, Zhen-Jin</creator><creator>Ye, Xin-Liang</creator><creator>Tu, Wei-Chen</creator><creator>Yang, Chih-Chiang</creator><creator>Su, Yan-Kuin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1134-5859</orcidid><orcidid>https://orcid.org/0000-0002-8716-8521</orcidid><orcidid>https://orcid.org/0000-0001-9581-8486</orcidid><orcidid>https://orcid.org/0000-0002-7250-0501</orcidid></search><sort><creationdate>20240301</creationdate><title>Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers</title><author>Wang, Zhen-Jin ; Ye, Xin-Liang ; Tu, Wei-Chen ; Yang, Chih-Chiang ; Su, Yan-Kuin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c292t-f15147bc0414735243394270368912c25a0fb1b98f3fa16ab5fe37dc23bdfc523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>AlGaInP</topic><topic>Aluminum gallium indium phosphides</topic><topic>Aluminum oxide</topic><topic>atomic layer deposition (ALD)</topic><topic>Atomic layer epitaxy</topic><topic>Bragg reflectors</topic><topic>Current density</topic><topic>distributed Bragg reflector (DBR)</topic><topic>Distributed Bragg reflectors</topic><topic>Electrical engineering</topic><topic>forward voltage</topic><topic>Leakage currents</topic><topic>Light emitting diodes</topic><topic>micro light-emitting diode (micro-LEDs)</topic><topic>Passivation</topic><topic>passivation layer</topic><topic>Passivity</topic><topic>Quantum efficiency</topic><topic>Reflection</topic><topic>Refractivity</topic><topic>sidewall treatment</topic><topic>Silicon dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Zhen-Jin</creatorcontrib><creatorcontrib>Ye, Xin-Liang</creatorcontrib><creatorcontrib>Tu, Wei-Chen</creatorcontrib><creatorcontrib>Yang, Chih-Chiang</creatorcontrib><creatorcontrib>Su, Yan-Kuin</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wang, Zhen-Jin</au><au>Ye, Xin-Liang</au><au>Tu, Wei-Chen</au><au>Yang, Chih-Chiang</au><au>Su, Yan-Kuin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2024-03-01</date><risdate>2024</risdate><volume>71</volume><issue>3</issue><spage>2253</spage><epage>2256</epage><pages>2253-2256</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>This study aims to improve the characteristics of AlGaInP-based micro light-emitting diodes (micro-LEDs) by utilizing three different passivation layers, including silicon dioxide (SiO2), distributed Bragg reflector (DBR), and aluminum oxide (Al2O3) grown by atomic layer deposition (ALD) in combination with DBR. In terms of transmittance and refractive indices, our proposed structure, constructed with ALD-grown Al2O3 and a nine-layered DBR, exhibits significant improvements in all aspects compared to the traditional structure with a 3000Å SiO2 passivation layer. Additionally, the structure demonstrates a 124.28% increase in external quantum efficiency (EQE) compared to the LED constructed with a nine-layered DBR. This result indicates that the ALD growth of Al2O3 effectively reduces sidewall losses, significantly impacting the improvement of micro-LEDs.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2024.3351595</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0003-1134-5859</orcidid><orcidid>https://orcid.org/0000-0002-8716-8521</orcidid><orcidid>https://orcid.org/0000-0001-9581-8486</orcidid><orcidid>https://orcid.org/0000-0002-7250-0501</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9383 |
| ispartof | IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.2253-2256 |
| issn | 0018-9383 1557-9646 |
| language | eng |
| recordid | cdi_ieee_primary_10411849 |
| source | IEEE Electronic Library (IEL) |
| subjects | AlGaInP Aluminum gallium indium phosphides Aluminum oxide atomic layer deposition (ALD) Atomic layer epitaxy Bragg reflectors Current density distributed Bragg reflector (DBR) Distributed Bragg reflectors Electrical engineering forward voltage Leakage currents Light emitting diodes micro light-emitting diode (micro-LEDs) Passivation passivation layer Passivity Quantum efficiency Reflection Refractivity sidewall treatment Silicon dioxide |
| title | Improving AlGaInP Micro-LEDs Characteristics via Varied Dielectric Passivation Layers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T16%3A58%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improving%20AlGaInP%20Micro-LEDs%20Characteristics%20via%20Varied%20Dielectric%20Passivation%20Layers&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Wang,%20Zhen-Jin&rft.date=2024-03-01&rft.volume=71&rft.issue=3&rft.spage=2253&rft.epage=2256&rft.pages=2253-2256&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2024.3351595&rft_dat=%3Cproquest_RIE%3E2933610188%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2933610188&rft_id=info:pmid/&rft_ieee_id=10411849&rfr_iscdi=true |