Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications

This paper aims at determining RF operating limits of SiGe HBTs. Long-term stress tests consisting of RF large-signal stress and periodic measurements of small-signal parameters are performed. Reliable dynamic large-signal transistor operation is demonstrated beyond conventional static safe operatin...

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Veröffentlicht in:	IEEE transactions on device and materials reliability 2024-03, Vol.24 (1), p.20-32
Hauptverfasser:	Weimer, Christoph, Fischer, Gerhard G., Schroter, Michael
Format:	Magazinearticle
Sprache:	eng
Schlagworte:	Breakdown Degradation Electric breakdown Heterojunction bipolar transistors Modelling operating limits Radio frequency Reliability RF reliability SiGe HBT Silicon germanides Silicon germanium Stress
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