Comparative Study on High-Temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-Integrated MOSFET

For 4H-SiC mosfet s, the parasitic PiN body diode causes problems such as significant forward voltage drop of body diode and poor reverse recovery characteristics during high-temperature operation. A reasonable solution is a mosfet with an integrated Schottky barrier diode to deactivate the PiN body...

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Veröffentlicht in:	IEEE transactions on power electronics 2024-04, Vol.39 (4), p.4187-4201
Hauptverfasser:	Gu, Zhaoyuan, Yang, Mingchao, Yang, Yi, Liu, Xihao, Gao, Mingyang, Qi, Jinwei, Liu, Weihua, Han, Chuanyu, Geng, Li, Hao, Yue
Format:	Artikel
Sprache:	eng
Schlagworte:	4H-SiC Buck converters Comparative studies Conduction heating Diodes Electrical properties high-temperature Integrated circuit modeling JBS-integrated MOSFET Mathematical models MOSFET MOSFETs Operating temperature Parameter sensitivity Performance evaluation Schottky diodes Silicon carbide System reliability Temperature Temperature dependence Temperature measurement Ultrahigh temperature Voltage drop
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