A 40-nm Compute-in-Memory Macro With RRAM Addressing IR Drop and Off-State Current

This letter describes an analog current-summing compute-in-memory macro using resistive random-access memory (RRAM). The readout transimpedance amplifiers use offset canceling with differential inputs from added sensing paths for the bitline (BL) and sourceline (SL) to minimize channel-to-channel (c...

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Veröffentlicht in:	IEEE solid-state circuits letters 2024, Vol.7, p.10-13
Hauptverfasser:	Spetalnick, Samuel D., Chang, Muya, Konno, Shota, Crafton, Brian, Lele, Ashwin Sanjay, Khwa, Win-San, Chih, Yu-Der, Chang, Meng-Fan, Raychowdhury, Arijit
Format:	Artikel
Sprache:	eng
Schlagworte:	Analog to digital converters Analog-digital conversion Clamps Compute-in-memory (CIM) current sensing Electric potential four-terminal sensing memory offset cancelation Random access memory ReRAM Resistance resistive random access memory (RRAM Resistors Sensors Solid state circuits Wires
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