Physical Reservoir Based on a Leaky-FeFET Using the Temporal Memory Effect

In this work, a leaky-Ferroelectric Field Effect Transistor (FeFET) neuron is introduced as a physical reservoir in a reservoir computing scheme. Compared to a conventional FeFET reservoir control sample, which did not show leaky behavior, the proposed leaky-FeFET neuron-based physical reservoir exh...

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Veröffentlicht in:	IEEE electron device letters 2024-01, Vol.45 (1), p.108-111
Hauptverfasser:	Lee, Gyusoup, Kang, Changyeon, Kim, Seongho, Park, Youngkeun, Shin, Eui Joong, Cho, Byung Jin
Format:	Artikel
Sprache:	eng
Schlagworte:	Bio-inspired computing Bio-inspired neuron FeFETs Ferroelectric devices Ferroelectricity Field effect transistors leaky-integrator neuron Neurons physical reservoir Reservoir computing Semiconductor devices
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