Enabling Online GaN Power Device Self-Health Monitoring With Analog SGD Supervised Learning and TJ-Independent Precursor Measurement
In order to mitigate reliability challenges on emerging wide-bandgap (WBG) gallium nitride (GaN) power devices, this article investigates a software-hardware codesign solution utilizing online device condition monitoring and machine-learning technologies, with an ultimate goal of achieving intellige...
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Veröffentlicht in: | IEEE journal of solid-state circuits 2024-06, Vol.59 (6), p.1735-1746 |
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creator | Huang, Yuanqing Chen, Yingping Ma, D. Brian |
description | In order to mitigate reliability challenges on emerging wide-bandgap (WBG) gallium nitride (GaN) power devices, this article investigates a software-hardware codesign solution utilizing online device condition monitoring and machine-learning technologies, with an ultimate goal of achieving intelligent device self-health learning efficiently and effectively. Specifically, an on-die logarithm-based analog stochastic gradient descent (SGD) supervised learning engine is developed to train a GaN power circuit to establish and update its own device thermal model seamlessly through autonomously self-tested condition precursor r_{\text {DS}\_{}\text {ON}} . To remove the adverse temperature ( T_{J} ) impact on condition monitoring efficacy, a nonintrusive online T_{J} sensing scheme is introduced by evaluating the ambient temperature ( T_{A} ) and the instant power loss ( P_{\text {LOSS}} ) to accomplish a truly T_{J} -independent precursor measurement. To validate this research effort, a GaN-based switching power converter prototype was built. The controller and gate drivers are fabricated using a 180 nm high-voltage (HV) bipolar-CMOS-DMOS (BCD) process, with an active die area of 2.9 mm2. Operating at 3.3 MHz, the converter can support a wide range of V_{\text {IN}} from 5 to 40 V and deliver a maximum power of 9 W at 5-V V_{O} . The proposed on-die logarithm-based supervised learning engine and T_{J} -independent r_{\text {DS}\_{}\text {ON}} condition monitoring module occupy 0.89 mm2 silicon die area and consume up to 3.5 mW power. The design demonstrates a maximum prediction error of 2.77% over the temperature range from 0 °C to 120 °C. |
doi_str_mv | 10.1109/JSSC.2023.3330835 |
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Brian</creator><creatorcontrib>Huang, Yuanqing ; Chen, Yingping ; Ma, D. Brian</creatorcontrib><description><![CDATA[In order to mitigate reliability challenges on emerging wide-bandgap (WBG) gallium nitride (GaN) power devices, this article investigates a software-hardware codesign solution utilizing online device condition monitoring and machine-learning technologies, with an ultimate goal of achieving intelligent device self-health learning efficiently and effectively. Specifically, an on-die logarithm-based analog stochastic gradient descent (SGD) supervised learning engine is developed to train a GaN power circuit to establish and update its own device thermal model seamlessly through autonomously self-tested condition precursor <inline-formula> <tex-math notation="LaTeX">r_{\text {DS}\_{}\text {ON}} </tex-math></inline-formula>. To remove the adverse temperature (<inline-formula> <tex-math notation="LaTeX">T_{J} </tex-math></inline-formula>) impact on condition monitoring efficacy, a nonintrusive online <inline-formula> <tex-math notation="LaTeX">T_{J} </tex-math></inline-formula> sensing scheme is introduced by evaluating the ambient temperature (<inline-formula> <tex-math notation="LaTeX">T_{A} </tex-math></inline-formula>) and the instant power loss (<inline-formula> <tex-math notation="LaTeX">P_{\text {LOSS}} </tex-math></inline-formula>) to accomplish a truly <inline-formula> <tex-math notation="LaTeX">T_{J} </tex-math></inline-formula>-independent precursor measurement. To validate this research effort, a GaN-based switching power converter prototype was built. The controller and gate drivers are fabricated using a 180 nm high-voltage (HV) bipolar-CMOS-DMOS (BCD) process, with an active die area of 2.9 mm2. Operating at 3.3 MHz, the converter can support a wide range of <inline-formula> <tex-math notation="LaTeX">V_{\text {IN}} </tex-math></inline-formula> from 5 to 40 V and deliver a maximum power of 9 W at 5-V <inline-formula> <tex-math notation="LaTeX">V_{O} </tex-math></inline-formula>. The proposed on-die logarithm-based supervised learning engine and <inline-formula> <tex-math notation="LaTeX">T_{J} </tex-math></inline-formula>-independent <inline-formula> <tex-math notation="LaTeX">r_{\text {DS}\_{}\text {ON}} </tex-math></inline-formula> condition monitoring module occupy 0.89 mm2 silicon die area and consume up to 3.5 mW power. The design demonstrates a maximum prediction error of 2.77% over the temperature range from 0 °C to 120 °C.]]></description><identifier>ISSN: 0018-9200</identifier><identifier>DOI: 10.1109/JSSC.2023.3330835</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aging ; Condition monitoring ; Dynamic ON-resistance ; Engines ; on-die supervised learning ; online TJ-independent condition monitoring ; power device self-health learning ; Sensors ; Supervised learning ; Temperature measurement ; Temperature sensors ; wide-bandgap (WBG) power device</subject><ispartof>IEEE journal of solid-state circuits, 2024-06, Vol.59 (6), p.1735-1746</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-8687-9858 ; 0000-0002-4457-7157 ; 0000-0002-5897-9480</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10320386$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10320386$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Huang, Yuanqing</creatorcontrib><creatorcontrib>Chen, Yingping</creatorcontrib><creatorcontrib>Ma, D. Brian</creatorcontrib><title>Enabling Online GaN Power Device Self-Health Monitoring With Analog SGD Supervised Learning and TJ-Independent Precursor Measurement</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description><![CDATA[In order to mitigate reliability challenges on emerging wide-bandgap (WBG) gallium nitride (GaN) power devices, this article investigates a software-hardware codesign solution utilizing online device condition monitoring and machine-learning technologies, with an ultimate goal of achieving intelligent device self-health learning efficiently and effectively. Specifically, an on-die logarithm-based analog stochastic gradient descent (SGD) supervised learning engine is developed to train a GaN power circuit to establish and update its own device thermal model seamlessly through autonomously self-tested condition precursor <inline-formula> <tex-math notation="LaTeX">r_{\text {DS}\_{}\text {ON}} </tex-math></inline-formula>. To remove the adverse temperature (<inline-formula> <tex-math notation="LaTeX">T_{J} </tex-math></inline-formula>) impact on condition monitoring efficacy, a nonintrusive online <inline-formula> <tex-math notation="LaTeX">T_{J} </tex-math></inline-formula> sensing scheme is introduced by evaluating the ambient temperature (<inline-formula> <tex-math notation="LaTeX">T_{A} </tex-math></inline-formula>) and the instant power loss (<inline-formula> <tex-math notation="LaTeX">P_{\text {LOSS}} </tex-math></inline-formula>) to accomplish a truly <inline-formula> <tex-math notation="LaTeX">T_{J} </tex-math></inline-formula>-independent precursor measurement. To validate this research effort, a GaN-based switching power converter prototype was built. The controller and gate drivers are fabricated using a 180 nm high-voltage (HV) bipolar-CMOS-DMOS (BCD) process, with an active die area of 2.9 mm2. Operating at 3.3 MHz, the converter can support a wide range of <inline-formula> <tex-math notation="LaTeX">V_{\text {IN}} </tex-math></inline-formula> from 5 to 40 V and deliver a maximum power of 9 W at 5-V <inline-formula> <tex-math notation="LaTeX">V_{O} </tex-math></inline-formula>. The proposed on-die logarithm-based supervised learning engine and <inline-formula> <tex-math notation="LaTeX">T_{J} </tex-math></inline-formula>-independent <inline-formula> <tex-math notation="LaTeX">r_{\text {DS}\_{}\text {ON}} </tex-math></inline-formula> condition monitoring module occupy 0.89 mm2 silicon die area and consume up to 3.5 mW power. The design demonstrates a maximum prediction error of 2.77% over the temperature range from 0 °C to 120 °C.]]></description><subject>Aging</subject><subject>Condition monitoring</subject><subject>Dynamic ON-resistance</subject><subject>Engines</subject><subject>on-die supervised learning</subject><subject>online TJ-independent condition monitoring</subject><subject>power device self-health learning</subject><subject>Sensors</subject><subject>Supervised learning</subject><subject>Temperature measurement</subject><subject>Temperature sensors</subject><subject>wide-bandgap (WBG) power device</subject><issn>0018-9200</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotjF1PwjAYhXuhiYj-ABMv-geG7dpt3SUB5CMgJFviJXnbvcWa0ZFuYLz3hzuiN-fkOXlyCHnibMQ5y19WRTEZxSwWIyEEUyK5IQPGuIrymLE7ct-2nz1KqfiA_Mw86Nr5A936vpDO4Y3umi8MdIoXZ5AWWNtogVB3H3TTeNc14aq_u57HHurmQIv5lBbnE4aLa7Gia4Tgrw74iparaOkrPGEfvqO7gOYc2ibQDUJ7Dnjs1wdya6Fu8fG_h6R8nZWTRbTezpeT8TpyPEu7SGuUCJCaGPKUMyMVMqEynUvGeSUSnSeJZBpUZjJurTQgLI_zTFujrBViSJ7_bh0i7k_BHSF87zkTcX-Til-uil8I</recordid><startdate>202406</startdate><enddate>202406</enddate><creator>Huang, Yuanqing</creator><creator>Chen, Yingping</creator><creator>Ma, D. Brian</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><orcidid>https://orcid.org/0000-0002-8687-9858</orcidid><orcidid>https://orcid.org/0000-0002-4457-7157</orcidid><orcidid>https://orcid.org/0000-0002-5897-9480</orcidid></search><sort><creationdate>202406</creationdate><title>Enabling Online GaN Power Device Self-Health Monitoring With Analog SGD Supervised Learning and TJ-Independent Precursor Measurement</title><author>Huang, Yuanqing ; Chen, Yingping ; Ma, D. Brian</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i176t-bbe4eaa6c2a9610c48e0387b94011d35b95540ba87c71ff4ca3f1297bfc8ff33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Aging</topic><topic>Condition monitoring</topic><topic>Dynamic ON-resistance</topic><topic>Engines</topic><topic>on-die supervised learning</topic><topic>online TJ-independent condition monitoring</topic><topic>power device self-health learning</topic><topic>Sensors</topic><topic>Supervised learning</topic><topic>Temperature measurement</topic><topic>Temperature sensors</topic><topic>wide-bandgap (WBG) power device</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Huang, Yuanqing</creatorcontrib><creatorcontrib>Chen, Yingping</creatorcontrib><creatorcontrib>Ma, D. Brian</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEL</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Huang, Yuanqing</au><au>Chen, Yingping</au><au>Ma, D. Brian</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enabling Online GaN Power Device Self-Health Monitoring With Analog SGD Supervised Learning and TJ-Independent Precursor Measurement</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>2024-06</date><risdate>2024</risdate><volume>59</volume><issue>6</issue><spage>1735</spage><epage>1746</epage><pages>1735-1746</pages><issn>0018-9200</issn><coden>IJSCBC</coden><abstract><![CDATA[In order to mitigate reliability challenges on emerging wide-bandgap (WBG) gallium nitride (GaN) power devices, this article investigates a software-hardware codesign solution utilizing online device condition monitoring and machine-learning technologies, with an ultimate goal of achieving intelligent device self-health learning efficiently and effectively. Specifically, an on-die logarithm-based analog stochastic gradient descent (SGD) supervised learning engine is developed to train a GaN power circuit to establish and update its own device thermal model seamlessly through autonomously self-tested condition precursor <inline-formula> <tex-math notation="LaTeX">r_{\text {DS}\_{}\text {ON}} </tex-math></inline-formula>. To remove the adverse temperature (<inline-formula> <tex-math notation="LaTeX">T_{J} </tex-math></inline-formula>) impact on condition monitoring efficacy, a nonintrusive online <inline-formula> <tex-math notation="LaTeX">T_{J} </tex-math></inline-formula> sensing scheme is introduced by evaluating the ambient temperature (<inline-formula> <tex-math notation="LaTeX">T_{A} </tex-math></inline-formula>) and the instant power loss (<inline-formula> <tex-math notation="LaTeX">P_{\text {LOSS}} </tex-math></inline-formula>) to accomplish a truly <inline-formula> <tex-math notation="LaTeX">T_{J} </tex-math></inline-formula>-independent precursor measurement. To validate this research effort, a GaN-based switching power converter prototype was built. The controller and gate drivers are fabricated using a 180 nm high-voltage (HV) bipolar-CMOS-DMOS (BCD) process, with an active die area of 2.9 mm2. Operating at 3.3 MHz, the converter can support a wide range of <inline-formula> <tex-math notation="LaTeX">V_{\text {IN}} </tex-math></inline-formula> from 5 to 40 V and deliver a maximum power of 9 W at 5-V <inline-formula> <tex-math notation="LaTeX">V_{O} </tex-math></inline-formula>. The proposed on-die logarithm-based supervised learning engine and <inline-formula> <tex-math notation="LaTeX">T_{J} </tex-math></inline-formula>-independent <inline-formula> <tex-math notation="LaTeX">r_{\text {DS}\_{}\text {ON}} </tex-math></inline-formula> condition monitoring module occupy 0.89 mm2 silicon die area and consume up to 3.5 mW power. The design demonstrates a maximum prediction error of 2.77% over the temperature range from 0 °C to 120 °C.]]></abstract><pub>IEEE</pub><doi>10.1109/JSSC.2023.3330835</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0002-8687-9858</orcidid><orcidid>https://orcid.org/0000-0002-4457-7157</orcidid><orcidid>https://orcid.org/0000-0002-5897-9480</orcidid></addata></record> |
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subjects | Aging Condition monitoring Dynamic ON-resistance Engines on-die supervised learning online TJ-independent condition monitoring power device self-health learning Sensors Supervised learning Temperature measurement Temperature sensors wide-bandgap (WBG) power device |
title | Enabling Online GaN Power Device Self-Health Monitoring With Analog SGD Supervised Learning and TJ-Independent Precursor Measurement |
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